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Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

Journal of Semiconductors 2024年第7期45卷 77-83页

作者： Huifan Xiong Xuesong Lu Xu Gao Yuchao Yan Shuai Liu lihui song Deren Yang Xiaodong Pi State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semiconductors ZJU-Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 311200China

Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation ***, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

关键词： 4H-SiC deep level transient spectroscopy(DLTS) photoluminescence(PL) defects

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A Novel Friction Stir Spot Riveting of Al/Cu Dissimilar Materials

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Acta Metallurgica Sinica(English Letters) 2021年第1期34卷 135-144页

作者： Jinglin Liu Qi song lihui song Shude Ji Mingshen Li Zhen Jia Kang Yang College of Aerospace Engineering Shenyang Aerospace UniversityShenyang 110136China China North Industries Corp. Beijing 100053China

In order to eliminate the disadvantages of the keyhole in conventional friction stir spot welding joint and attain the highstrength lap joint of Al/Cu dissimilar metals,a novel welding technique,named as friction stir spot riveting(FSSR),was proposed.A pinless tool and an extra filling stud were *** Al/Cu spot joints without keyhole defect were achieved by the FSSR.A Cu anchor-like structure was formed,which greatly increased the mechanical interlocking between the upper Al sheet and lower Cu *** thin intermetallic compounds containing CuAl2 and CuAl at the Al/Cu interface strengthened the joining interface between the Al sheet and the Cu *** rotating velocity increased frictional heat and plastic deformation and then eliminated the interfacial joining *** FSSR joint with the maximum tensile shear load of 3.50 kN was achieved at a rotating velocity of 1800 rpm and a dwell time of 20 s,whose fracture path passed through the softened region of upper Al *** summary,the novel FSSR technique has the advantages of strong mechanical interlocking and metallurgical bonding between dissimilar materials,thereby attaining the high-strength spot joint.

关键词： Al/Cu dissimilar materials Friction stir spot riveting Intermetallic compounds Microstructures Tensile shear strength

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电子辐照对4H-SiC MOS材料缺陷的影响

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人工晶体学报 2024年第9期53卷 1536-1541页

作者：刘帅熊慧凡杨霞杨德仁皮孝东宋立辉浙江大学材料科学与工程学院硅及先进半导体材料全国重点实验室杭州310027 浙江大学杭州国际科创中心先进半导体研究院和浙江省宽禁带功率半导体材料与器件重点实验室杭州311200 杭州电子科技大学材料与环境工程学院杭州310018

4H-SiC金属氧化物半导体(MOS)基器件在电子辐照环境下应用时可能产生新的材料缺陷,导致其电学性能发生退化。本文选取结构最简单的MOS基器件(4H-SiC MOS电容器)为对象,研究了一系列电子辐照剂量下材料缺陷的演变情况。在10 MeV电子束下... 详细信息

4H-SiC金属氧化物半导体(MOS)基器件在电子辐照环境下应用时可能产生新的材料缺陷,导致其电学性能发生退化。本文选取结构最简单的MOS基器件(4H-SiC MOS电容器)为对象,研究了一系列电子辐照剂量下材料缺陷的演变情况。在10 MeV电子束下对MOS样品进行30、50、100、500、1 000 kGy剂量的辐照,对辐照前、后样品进行深能级瞬态谱测试(DLTS)和电容-电压(C-V)曲线表征。DLTS实验结果表明,低剂量电子辐照前、后4H-SiC/SiO_(2)界面及近界面处的缺陷没有发生明显变化,而高剂量辐照导致双碳间隙原子缺陷的构型发生了改变,演变后的构型能级位置更深,化学结构更加稳定。C-V曲线测试结果发现,不同电子辐照剂量导致MOS电容器平带电压发生不同程度的负向漂移,这很可能是SiO_(2)氧化层中氧空位数量和4H-SiC/SiO_(2)界面及近界面处缺陷数量共同影响的结果。本文研究结果对研发和优化抗电子辐照的4H-SiC MOS制备工艺具有一定的参考价值。

关键词： 4H-SiC MOS 电子辐照缺陷变化双碳间隙原子深能级瞬态谱

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Application Potential of Mg–Zn–Nd Alloy as a Gastrointestinal Anastomosis Nail Material

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Acta Metallurgica Sinica(English Letters) 2022年第4期35卷 609-620页

作者： lihui song Ming Gao Lili Tan Zheng Ma Peng Ni Min Zhou Di Na Department of Surgical Oncology and General Surgery The First Hospital of China Medical UniversityKey Laboratory of Precision Diagnosis and Treatment of Gastrointestinal Tumors(China Medical University)Ministry of EducationShenyang 110001China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China Institute of Metal Research Chinese Academy of SciencesShenyang 110016China

Gastrointestinal tumors are common malignant tumors in the digestive tract, of which gastric cancer is the third leading cause of cancer death and colorectal cancer is the fourth most deadly cancer. Nowadays, surgical resection remains to be one of the main measures for treating digestive tract tumors, and gastrointestinal anastomosis remains to be a key step in gastrointestinal surgery. Mg and its alloys have great potentials to be used for gastrointestinal anastomosis as anastomotic nail materials due to their biodegradability, good mechanical properties and biocompatibility. In this study, Mg–2Zn–0.5Nd(ZN20) alloy fine wires showed great potential as surgical staples. When we performed in vitro corrosion experiments, drainage fluid was collected from different parts of the patient’s abdominal cavity after surgery for the first time to replace the traditional simulation fluid and to more realistically simulate the microenvironment required by the anastomotic nail. ZN20 alloy has an ultimate tensile strength of 256 MPa, an elongation rate of 12.56%, a tensile force in anastomosis of 16.8 N, and a rupture pressure after anastomosis at 17 kPa, which means that a sufficient mechanical support was provided after *** statistical analysis and histopathological analysis of biochemical tests indicate that ZN20 alloy has no adverse effect on the normal metabolism of liver, kidney and body, but has superior biocompatibility and biosafety. This work confirms that ZN20 possesses a great application potential in the clinical field as a new type of gastrointestinal anastomotic nail material.

关键词： Magnesium alloy Gastrointestinal tumor Absorbable Degradation rate

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Defect passivation on cast-mono crystalline screen-printed cells

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Frontiers in Energy 2017年第1期11卷 60-66页

作者： Alison WENHAM lihui song Malcolm ABBOTT Iskra ZAFIROVSKA Sisi WANG Brett HALLAM Catherine CHAN Allen BARNETT Stuart WENHAM School of Photovoltaic and Renewable Energy Engineering University of New South Wales Sydney NSW 2052 Australia College of Materials & Environmental Engineering Hangzhou DianZiUniversity Hangzhou 310018 China

Cast-mono crystalline silicon wafers contain crystallographic defects, which can severely impact the electrical performance of solar cells. This paper demon- strates that applying hydrogenation processes at moderate temperatures to finished screen print cells can passivate dislocation clusters within the cast-mono crystalline silicon wafers far better than the hydrogenation received during standard commercial firing conditions. Efficiency enhancements of up to 2% absolute are demonstrated on wafers with high dislocation densities. The impact of illumination to manipulate the charge state of hydrogen during annealing is investigated and found to not be significant on the wafers used in this study. This finding is contrary to a previous study on similar wafers that concluded increased H or H0 from laser illumination was responsible for the further passivation of positively charged dangling bonds within the dislocation clusters.

关键词： silicon solar cell dislocation cast-mono,laser hydrogen passivation

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eSeis Neo充电下载一体柜特性及常见问题调试方法

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物探装备 2024年第3期34卷 208-210页

作者：宋立辉李超任宜林封召鹏范举中国石油集团东方地球物理勘探有限责任公司西安物探装备分公司陕西西安710061 中国石油集团东方地球物理勘探有限责任公司国际勘探事业部陕西西安710061

本文主要介绍eSeis Neo充电下载一体柜(以下简称机柜)的组成结构、性能参数、技术特性、灯语注释以及机柜组装调试过程中的主要调试方法,包括程序下载、机柜环境搭建、机柜控制板单板功能测试以及测试过程中常见故障的排除方法。通过内... 详细信息

本文主要介绍eSeis Neo充电下载一体柜(以下简称机柜)的组成结构、性能参数、技术特性、灯语注释以及机柜组装调试过程中的主要调试方法,包括程序下载、机柜环境搭建、机柜控制板单板功能测试以及测试过程中常见故障的排除方法。通过内容介绍使读者更好地理解机柜工作的原理,了解机柜的结构组成,掌握机柜调试的流程及方法,处理调试过程中遇到的一些常见问题,从而使读者能够更好地维护和管理机柜,确保其能够正常运行。

关键词：性能参数技术特性机柜 eSeisNeo

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The mechanical property and corrosion resistance of Mg-Zn-Nd alloy fine wires in vitro and in vivo

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Bioactive Materials 2021年第1期6卷 55-63页

作者： Ming Gao Di Na Xiangqiao Ni lihui song Iniobong PEtim Ke Yang Lili Tan Zheng Ma School of Materials Science and Engineering University of Science and Technology of ChinaShenyang110016China Institute of Metal Research Chinese Academy of SciencesShenyang110016China The First Hospital of China Medical University Department of Surgical OncologyChina

Titanium and its alloy are commonly used as surgical staples in the reconstruction of intestinal tract and stomach,however they cannot be absorbed in human body,which may cause a series of complications to influence further *** and its alloy have great potential as surgical staples,because they can be degraded in human body and have good mechanical properties and *** this study,Mg-2Zn-0.5Nd(ZN20)alloy fine wires showed great potential as surgical *** ultimate tensile strength and elongation of ZN20 alloy fine wires were 248 MPa and 13%,respectively,which could be benefit for the deformation of the surgical staples from U-shape to *** bursting pressure of the wire was about 40 kPa,implying that it can supply sufficient mechanical support after *** test and histological analysis illustrated good biocompatibility and biological safety of ZN20 alloy fine *** residual tensile stress formed on the outside of ZN20 fine wire during drawing would accelerate the *** second phase had a negative influence on corrosion property due to galvanic *** corrosion rate in vitro was faster than that in vivo due to the capsule formed on the surface of ZN20 alloy fine wire.

关键词： Magnesium Surgical staple Anastomosis Corrosion resistance In vivo

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Design and Implementation of Security Solution for Computer Network

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International Journal of Technology Management 2015年第5期 75-78页

作者： lihui song Haicun ZHAO Yanching Institute of Technology Langfang Hebei 065201 China The Northern Investment Group Co Ltd. Beijing 100084China

This article analyzes the problem of computer network security, and design scheme of the network security system. The scheme uses advanced network security technologies, includes a complete set of physical isolation, desktop system security, virus protection, identity authentication, access control, information encryption, message integrity check, non-repudiation, security audit, intrusion detection, vulnerability scanning, electromagnetic leakage emission protection, security management and other security technology and management measures, the purpose is to establish a complete, multi-level three-dimensional, network security defense system.

关键词： Network security Firewall Intrusion detection Security audit

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Study on the Traditional Classroom Learning and the Autonomous Learning

Study on the Traditional Classroom Learning and the Autonomo...

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2012 2nd International Conference on Social Sciences and Society(ICSSS 2012)

作者： song lihui School of Foreign Languages of Shandong Polytechnic University

Autonomous learning has aroused great interest in recent years, and many universities also attempt to test whether it is really beneficial to students. The author of this article will use her experiment to present rea... 详细信息

关键词： Autonomous learning Traditional Classroom Learning Comparison.

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Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

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Journal of Semiconductors 2022年第12期43卷 72-78页

作者： Guang Yang Hao Luo Jiajun Li Qinqin Shao Yazhe Wang Ruzhong Zhu Xi Zhang lihui song Yiqiang Zhang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Hangzhou Innovation Center Zhejiang UniversityHangzhou 311200China School of Materials Science and Engineering&Henan Institute of Advanced Technology Zhengzhou UniversityZhengzhou 450001China

Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-SiC),which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial *** this work,we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs)and basal plane dislocations(BPDs)in *** n-type 4H-SiC,the inclination angles of the etch pits of TSDs,TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°,8°−15°and 2°−4°,*** semi-insulating 4H-SiC,the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34°and 21°−24°,*** inclination angles of dislocation-related etch pits are independent of the etching duration,which facilitates the discrimination and statistic of dislocations in *** significantly,the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and *** enables to distinguish TMDs from TSDs in 4H-SiC.

关键词： 4H-SiC single crystals dislocations molten-alkali etching

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