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Real-time Bezier interpolation satisfying chord error constraint for CNC tool path

Science China(Technological Sciences) 2016年第2期59卷 203-213页

作者： FAN Wei lee chenhan CHEN JiHong XIAO Yao National NC System Engineering Research Center Huazhong University of Science and Technology Institute of Mechanical Manufacturing Technology China Academy of Engineering Physics Aerospace Engineering Department Zhejiang University

G01 code generated by a computer-aided manufacture （CAM） system is the most common form of tool trajeclory in computer numerical control （CNC） machining. A tool path composed of short line segments has discontinuous tangenc t and curvature, generating large fluctuations of feedrate and acceleration, which in turn produces vibration in a machine tool. To obtain a smooth tool path, many methods on tool-path smoothing have been developed. However, the shortcomings i：1 these methods exist when they are employed in a CNC system. It is difficult to simultaneously to guarantee the following requirements of CNC machining：（1） chord error should be rigidly constrained; （2） G01 points should be interpolated; （3） cur,,ature should be continuous （G2）; （4） machining should be applicable to spatial cases; （5） real-time performance of computaEion is *** on these various requirements, this study proposes an interpolation scheme using CUDlC t^ezler curves anu mciuucb illl adjustment strategy to eliminate deficiencies in the tool path. The tool path generated is G2, chord-elror-constrained, G01-point-interpolated, loop-free, and optimized for both stretch and jerk energy. The method is applicable ：o 3D cases and involves only simple algebraic computations. Thus, the algorithm can be applied to real-time CNC machining. A simulation is conducted to validate the efficiency of the algorithm. In addition, an experiment reveals its advantage over Hermite interpola- tion in surface quality and machining efficiency.

关键词： real-time CNC machining stretch energy jerk energy loop-free chord error

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Resistance switching for RRAM applications

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Science China(Information Sciences) 2011年第5期54卷 1073-1086页

作者： CHEN Frederick T. lee HengYuan HSU YenYa CHEN PangShiu LIU WenHsing TSAI chenhan SHEU ShyhShyuan TSAI MingJinn Nanoelectronic Technology Division Electronics and Optoelectronics Research Laboratories Industrial Technology Research Institute (ITRI) Department of Chemical and Materials Engineering Ming Shin University of Science and Technology

Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (au- tomotive, embedded, storage, RAM). Based on sudden conduction through oxide insulators, the characteristics of RRAM technology have still yet to be fully described. In this paper, we present our current understanding of this very promising technology.

关键词： random access memory storage oxide breakdown oxygen vacancies

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