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Network Traffic Synthesis and Simulation Framework for Cybersecurity Exercise Systems

Computers, Materials & Continua 2024年第9期80卷 3637-3653页

作者： Dong-Wook kim Gun-Yoon Sin kwangsoo kim Jaesik Kang Sun-Young Im Myung-Mook Han Department of AI Software Gachon UniversitySeongnam-Si13120Republic of Korea School of Computer Engineering&Applied Mathematics Hankyong National UniversityPyeongtaek-Si17738Republic of Korea Cyber ElectronicWarfare Research and Development LIG Nex1Seongnam-Si13488Republic of Korea

In the rapidly evolving field of cybersecurity,the challenge of providing realistic exercise scenarios that accurately mimic real-world threats has become increasingly *** methods often fall short in capturing the dynamic and complex nature of modern cyber *** address this gap,we propose a comprehensive framework designed to create authentic network environments tailored for cybersecurity exercise *** framework leverages advanced simulation techniques to generate scenarios that mirror actual network conditions faced by professionals in the *** cornerstone of our approach is the use of a conditional tabular generative adversarial network(CTGAN),a sophisticated tool that synthesizes realistic synthetic network traffic by learning fromreal data *** technology allows us to handle technical components and sensitive information with high fidelity,ensuring that the synthetic data maintains statistical characteristics similar to those observed in real network *** meticulously analyzing the data collected from various network layers and translating these into structured tabular formats,our framework can generate network traffic that closely resembles that found in actual *** integral part of our process involves deploying this synthetic data within a simulated network environment,structured on software-defined networking(SDN)principles,to test and refine the traffic *** simulation not only facilitates a direct comparison between the synthetic and real traffic but also enables us to identify discrepancies and refine the accuracy of our *** initial findings indicate an error rate of approximately 29.28%between the synthetic and real traffic data,highlighting areas for further improvement and *** providing a diverse array of network scenarios through our framework,we aim to enhance the exercise systems used by cybersecurity *** not only improves their ability to r

关键词： Cybersecurity exercise synthetic network traffic generative adversarial network traffic generation software-defined networking

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Measurement of ^(59)Co(ai,x)reaction cross sections with the fast neutrons based on the ^(9)Be(p,n)reaction

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Chinese Physics C 2021年第4期45卷 248-255页

作者： Muhammad Zaman Muhammad Nadeem Muhammad Sahid kwangsoo kim Guinyun kim Nguyen Thi Hien Department of Physics and Center for High Energy Physics Kyungpook National UniversityDaegu 41566Republic of Korea Institute of Physics Vietnam Academy of Science and Technology10 Dao TanHanoiVietnam

The cross sections of the ^(59)Co(n,x)reaction in the average energy range of 15.2-37.2 MeV were meas-ured using activation and an off-line γ-ray spectrometric *** neutrons were generated from the ^(9)Be(p,n)reaction with proton beam energies of 25-45 MeV at the MC-50 Cyclotron facility of the Korean Institute of Radi-ological and Medical Sciences(KIRAMS).Theoretical cal lculations of neutron-induced reactions on ^(59)Co were per-formed using the nuclear model code *** results for the ^(59)Co(n,x)reactions were compared with the theoretical values obtained using TALYS-1.9 and the literature data provided in EXFOR and the TENDL 2019 nuc-lear data *** theoretical values obtained using TALYS-1.9 with adjusted parameters are comparable to the experimental *** measured reaction cross sections of a few radionuclides are new,and the others are compar-able to the literature data,and thus,they can strengthen the *** present study on cross sections leads to useful insight into the mechanisms of ^(59)Co(n,x)reactions.

关键词： ^(59)Co(n,x)reaction cross sections average neutron energy of 15.2-37.2 MeV off-lineγ-ray spectrometry MCNPX 2.6.0 simulation TALYS-1.9

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A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance

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Journal of Semiconductors 2021年第6期42卷 55-63页

作者： Jongwoon Yoon kwangsoo kim Department of Electronic Engineering Sogang UniversitySeoul 04107Korea

A split gate MOSFET(SG-MOSFET)is widely known for reducing the reverse transfer capacitance(C_(RSS)).In a 3.3 kV class,the SG-MOSFET does not provide reliable operation due to the high gate oxide electric *** addition to the poor static performance,the SG-MOSFET has issues such as the punch through and drain-induced barrier lowering(DIBL)caused by the high gate oxide electric *** such,a 3.3 kV 4 H-SiC split gate MOSFET with a grounded central implant region(SG-CIMOSFET)is proposed to resolve these issues and for achieving a superior trade-off between the static and switching *** SG-CIMOSFET has a significantly low on-resistance(R_(ON))and maximum gate oxide field(E_(OX))due to the central implant region.A grounded central implant region significantly reduces the C_(RSS)and gate drain charge(Q_(GD))by partially screening the gate-to-drain capacitive *** to a planar MOSFET,the SG MOSFET,central implant MOSFET(CIMOSFET),the SGCIMOSFET improve the R_(ON)×Q_(GD)by 83.7%,72.4%and 44.5%,*** results show that the device features not only the smallest switching energy loss but also the fastest switching time.

关键词： 4H-SiC split gate on-resistance reverse transfer capacitance switching energy loss switching time

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3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

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Journal of Semiconductors 2021年第6期42卷 41-47页

作者： Kyuhyun Cha kwangsoo kim Department of Electronic Engineering Sogang UniversitySeoul 04107Korea

In this paper,a 4 H-Si C DMOSFET with a source-contacted dummy gate(DG-MOSFET)is proposed and analyzed through Sentaurus TCAD and PSIM *** source-contacted MOS structure forms fewer depletion regions than the PN ***,the overlapping region between the gate and the drain can be significantly reduced while limiting RON *** a result,the DG-MOSFET offers an improved high-frequency figure of merit(HF-FOM)over the conventional DMOSFET(C-MOSFET)and central-implant MOSFET(CI-MOSFET).The HF-FOM(RON×QGD)of the DG-MOSFET was improved by59.2%and 22.2%compared with those of the C-MOSFET and CI-MOSFET,*** a double-pulse test,the DG-MOSFET could save total power losses of 53.4%and 5.51%,***,in a power circuit simulation,the switching power loss was reduced by 61.9%and 12.7%in a buck converter and 61%and 9.6%in a boost converter.

关键词： 4H-Si C MOSFET dummy-gate gate-drain charge switching loss

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Electrochemical partial reduction of Ni(OH)_(2) to Ni(OH)_(2)/Ni via coupled oxidation of an interfacing NiAl intermetallic compound for robust hydrogen evolution

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Journal of Energy Chemistry 2023年第7期82卷 560-571,I0012页

作者： Young Hwa Yun kwangsoo kim Changsoo Lee Byeong-Seon An Ji Hee Kwon Sechan Lee MinJoong kim Jongsu Seo Jong Hyeok Park Byung-Hyun kim Hyun-Seok Cho Hydrogen Research Department Korea Institute of Energy Research152 Gajeong-roYuseong-guDaejeon 34129Republic of Korea Computational Science&Engineering Laboratory Korea Institute of Energy Research152 Gajeong-roYuseong-guDaejeon 34129Republic of Korea Analysis Center for Energy Research Korea Institute of Energy Research152 Gajeong-roYuseong-guDaejeon 34129Republic of Korea Department of Chemical and Biomolecular Engineering Yonsei University50 Yonsei-roSeodaemun-guSeoul 03722Republic of Korea

Ni-based porous electrocatalysts have been widely used in the hydrogen evolution reaction(HER)in alkaline water electrolysis,and the catalysts are produced by selective leaching of Al from Ni-Al *** is well known that chemical leaching of Ni-Al intermetallic compound(IMC)generates a high surface area in Ni(OH)_(2).However,the Ni(OH)_(2) produced by leaching the Ni-Al intermetallic compound retards the hydrogen evolution reaction,which is attributed to its weak hydrogen adsorption *** this study,we controlled the chemical state of Ni using plasma vapor deposition(PVD)followed by heat treatment,selective Al leaching,and electrochemical reduction.X-ray diffraction(XRD),scanning microscopy(SEM),transmission electron microscopy(TEM),and energy-dispersive X-ray spectroscopy(EDS)were used to confirm the phase evolution of the electrocatalysts during *** reveal that the heat-treated Ni-Al alloy with a thick Ni2Al3surface layer underwent selective Al leaching and produced biphasic interfaces comprising Ni(OH)_(2) and NiAl IMCs at the edges of the grains in the outermost surface *** oxidation of the interfacing NiAl IMCs facilitated the partial reduction of Ni(OH)_(2) to Ni(OH)_(2)/Ni in the grains during electrochemical reduction,as confirmed by X-ray photoelectron spectroscopy(XPS).An electrocatalyst containing partially reduced Ni(OH)_(2)/Ni exhibited an overpotential of 54 mV at 10 mA/cm^(2) in a half-cell measurement,and a cell voltage of 1.675 V at 0.4 A/cm2for single-cell operation.A combined experimental and theoretical study(density functional theory calculations)revealed that the superior HER activity was attributed to the presence of partially reduced metallic Ni with various defects and residual Al,which facilitated water adsorption,dissociation,and finally hydrogen evolution.

关键词： Raney nickel HERChemical leaching Intrinsic activity Partial reduction

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论后发国家的企业技术竞争情报:战略与特征——以韩国三星电子的技术竞争情报发展模式为例

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情报理论与实践 2011年第3期34卷 10-14页

作者：彭靖里 kwangsoo kim Jeanne.杨云南省科技情报研究所云南昆明650051 Konkuk大学国际工商学院苏塞克斯大学科技政策研究所

应用国际上通行的解释性案例分析方法,通过对韩国三星电子公司开展技术竞争情报活动的发展历程及其成功经验和教训进行深入剖析,揭示了后发国家企业技术竞争情报活动的发展规律和特殊性,认为后发国家企业技术竞争情报活动在目标动机、... 详细信息

应用国际上通行的解释性案例分析方法,通过对韩国三星电子公司开展技术竞争情报活动的发展历程及其成功经验和教训进行深入剖析,揭示了后发国家企业技术竞争情报活动的发展规律和特殊性,认为后发国家企业技术竞争情报活动在目标动机、运行模式和信息来源等方面与发达国家相比存在着很大的差异,应当依据其特殊性与要求来指导和推动后发国家企业的技术竞争情报健康发展。

关键词：技术竞争情报企业后发国家案例分析

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Role of DRAM2,a Novel Damage-Regulated Autophagy Modulator（DRAM）like Protein,in Autophagic Cell Death

Role of DRAM2,a Novel Damage-Regulated Autophagy Modulator（...

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The 8th Asia/Oceania Regional Congress of Gerontology and Geriatrics

作者： Yunjee Seo kwangsoo kim Myounghee Chae Junsoo park Korea Basic Science Institute Gwang-ju center Korea Basic Science Institute Gwang-ju center Korea Basic Science Institute Gwang-ju center Korea Basic Science Institute Gwang-ju center

＜正＞Autophagy,the degradation of cytoplasmic components,is an evolutionarily conserved homeostatic process involved in environmental adaptation,lifespan determination and tumor *** recent study revealed that DRAM（Damage Regulated Autophagy Modulator）were induced by p53 expression and mediated Autophagosome *** present study described the cloning of a novel protein termed DRAM2,whose

关键词： Autophagy cell death p53 DRAM

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论韩国技术竞争情报的发展及其在企业中的应用

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现代情报 2008年第7期28卷 188-192页

作者：彭靖里 kwangsoo kim 李建平张汝斌云南省科技情报研究所云南昆明650051 韩国Konkuk大学国际工商学院卡尔国际信息科学与竞争政策研究所云南省科技交流中心云南昆明650228

在全面总结韩国技术竞争情报(CTI)服务的兴起及发展历史的基础上,客观分析了其CTI应用的特点及其效果,并且对韩国企业开展CTI活动的动力因素及其影响进行了深入研究。

关键词：技术竞争情报发展企业应用动力因素韩国

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论韩国技术竞争情报发展的现状、特点与动力

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竞争情报 2007年第4期3卷 43-48页

作者：彭靖里 kwangsoo kim 李建平张汝斌云南省科技情报研究所昆明650051 韩国Konkuk大学国际工商学院卡尔国际信息科学与竞争政策研究所云南省科技交流中心昆明650228

本文在全面总结韩国技术竞争情报(CTI)服务的兴起及发展现状的基础上,系统客观地分析了其CTI发展的特点及其效果,然后对韩国开展CTI活动的动力及其影响因素进行了初步研究。

关键词：韩国技术竞争情报发展现状特点动力

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中国朝鲜语历史研究

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中国朝鲜语文 2019年第3期 14-30页

作者：金光洙延边大学

朝鲜语史是对朝鲜语的产生、变化以及发展过程中所产生的标记法、语音、语法形态、句子结构、词汇等的变化原因和变化趋势进行考察的学问。朝鲜语史是朝鲜民族历史的组成部分,就像政治史、经济史、文化史等,朝鲜语史也是我们民族历史的... 详细信息

朝鲜语史是对朝鲜语的产生、变化以及发展过程中所产生的标记法、语音、语法形态、句子结构、词汇等的变化原因和变化趋势进行考察的学问。朝鲜语史是朝鲜民族历史的组成部分,就像政治史、经济史、文化史等,朝鲜语史也是我们民族历史的一部分。我们的民族同胞无论是谁,无论是过去还是现在,如果没有朝鲜语就很难生活下去。因为只有通过话语和文字才能实现交流和沟通,表达思想,传递苦恼。所以可以说朝鲜语是反映我们所有精神与物质生活的镜子。由此我们可以认识到研究朝鲜语史的重要性。本文根据《中国朝鲜语文》杂志上发表的95篇论文,就中国朝鲜语史的研究成果进行归纳和总结。

关键词：中国朝鲜语变化、发展历史研究

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