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Towards growth of pure AB-stacked bilayer graphene single crystals

Nano Research 2024年第5期17卷 4616-4621页

作者： Xiaowen Zhang Tao Zhou Yunlong Ren Zuo Feng Ruixi Qiao Qinghe Wang Bin Wang Jinxia Bai Muhong Wu Zhilie Tang Xu Zhou kaihui liu Xiaozhi Xu Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum MaterialsSchool of PhysicsSouth China Normal UniversityGuangzhou 510006China Guangdong-Hong Kong Joint Laboratory of Quantum Matter School of PhysicsSouth China Normal UniversityGuangzhou 510006China Physical Science and Engineering Division King Abdullah University of Science and TechnologyThuwal 23955–6900Saudi Arabia State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Institute for Frontier Science Nanjing University of Aeronautics and AstronauticsNanjing 210094China International Centre for Quantum Materials Collaborative Innovation Centre of Quantum MatterPeking UniversityBeijing 100871China Songshan Lake Materials Laboratory Institute of PhysicsChinese Academy of SciencesDongguan 523808China

Given its intriguing band structure and unique tunable bandgap,AB-stacked bilayer graphene has great potentials in the applications of high-end electronics,optoelectronics and *** epitaxial growth of AB-stacked single-crystal bilayer graphene films requires a strict AB-stacked lattice,identical orientations and seamless stitching of bilayer graphene ***,the particles inevitably present on the metal surface that produced during high temperature growth would induce random orientations,twisted stacking islands,and uncontrollable multilayers,which is a great challenge to ***,we propose a heat-resisting-box assisted strategy to produce nearly pure AB-stacked bilayer graphene single-crystal films on Cu/Ni(111)*** our technique,the particles on the Cu/Ni(111)surface are effectively eliminated,which greatly minimizes the occurrence of randomly twisted islands and uncontrollable *** as-grown AB-stacked bilayer graphene films show>99%alignment and>99%AB stacking *** work provides a promising method towards the growth of pure AB-stacked bilayer graphene single crystals and would accelerate its device applications.

关键词： bilayer graphene AB stacking uniform growth heat-resisting box

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Growth of Noncentrosymmetric Two-Dimensional Single Crystals

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Precision Chemistry 2024年第7期2卷 330-354页

作者： Guoliang Cui Jiajie Qi Zhihua Liang Fankai Zeng Xiaowen Zhang Xiaozhi Xu kaihui liu Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum MaterialsSchool of PhysicsSouth China Normal UniversityGuangzhou 510631China Guangdong−Hong Kong Joint Laboratory of Quantum Matter Frontier Research Institute for PhysicsSouth China Normal UniversityGuangzhou 510631China State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Songshan Lake Materials Laboratory Institute of PhysicsChinese Academy of SciencesDongguan 523820China

Among the various two-dimensional(2D)materials,more than 99%of them are ***,since the commonly used substrates are generally centrosymmetric,antiparallel islands are usually inevitable in the growth of noncentrosymmetric 2D materials because of the energetic equivalency of these two kinds of antiparallel islands on centrosymmetric ***,achieving the growth of noncentrosymmetric 2D single crystals has long been a great challenge compared with the centrosymmetric ones like *** this review,we presented the remarkable efforts and progress in the past decade,through precise chemical *** first discussed the great challenge and possible strategies in the growth of noncentrosymmetric 2D single ***,we focused on the advancements made in producing representative noncentrosymmetric 2D single crystals,including hexagonal boron nitride(hBN),transition metal dichalcogenides(TMDs),and other noncentrosymmetric 2D *** last,we summarized and looked forward to future research on the growth of layer-,stacking-,and twist-controlled noncentrosymmetric 2D single crystals and their heterostructures.

关键词： noncentrosymmetric two-dimensional materials single crystals hexagonal boron nitride transition metal dichalcogenides

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Evidence of abnormal hot carrier thermalization at van Hove singularity of twisted bilayer graphene

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Science Bulletin 2024年第16期69卷 2522-2528页

作者： Nianze Shang Chen Huang Qing Chen Chang liu Guangjie Yao Zhipei Sun Sheng Meng kaihui liu Hao Hong State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China QTF Centre of Excellence Department of Electronics and NanoengineeringAalto UniversityEspoo 02150Finland Institute of Physics Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Lab Institute of PhysicsChinese Academy of SciencesDongguan 523808China Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials Peking UniversityBeijing 100871China

Interlayer twist evokes revolutionary changes to the optical and electronic properties of twisted bilayer graphene(TBG)for electronics,photonics and *** the ground state responses in TBG have been vastly and clearly studied,the dynamic process of its photoexcited carrier states mainly remains ***,we unveil the photoexcited hot carrier dynamics in TBG by time-resolved ultrafast photoluminescence(PL)autocorrelation *** demonstrate the unconventional ultrafast PL emission between the van Hove singularities(VHSs)with a~4 times prolonged relaxation *** intriguing photoexcited carrier behavior is ascribed to the abnormal hot carrier thermalization brought by bottleneck effects at VHSs and interlayer charge distribution *** study on hot carrier dynamics in TBG offers new insights into the excited states and correlated physics of graphene twistronics systems.

关键词： Twisted bilayer graphene van Hove singularity Ultrafast photoluminescence Hot carrier dynamics

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Non-van der Waals AgCrS_(2) nanosheet: a new member of 2D realm

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Science China Chemistry 2022年第3期65卷 419-420页

作者： kaihui liu State Key Laboratory for Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China

Layered materials with strong interlayer interaction have gained tremendous attention for accessing two-dimensional(2 D) structures, since the charged layers with diverse dangling bonds enrich such atomic-thick structures with exotic properties and versatile functionalization [1–3]. However,unlike van der Waals(vd W) materials that can be directly torn by various routes, the stronger interactions between neighboring layers make them more difficult to laminate.

关键词： versatile gained neighboring

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu liu Can liu Chunsen liu Guanyu liu kaihui liu Liwei liu Sheng liu Yuan liu Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Two meters graphene ?lm for generators

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Science Bulletin 2019年第8期64卷 487-489页

作者： Zhibin Zhang kaihui liu State Key Laboratory for Mesoscopic Physics School of Physics Peking University

Physicists and especially applied physicists long for a convenient way for converting mechanical, solar energy, and thermal energy into electricity, which makes up our modern lives—from a small LED light to many integrated communication devices. Since the breakthrough work by Faraday in the beginning of the 19th century, the harvesting of electricity has been the hot topic in our modern society.

关键词： Two meters graphene film for generators

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信息技术能力与创新开放性对物流服务业创新的价值探讨

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物流科技 2024年第16期47卷 80-82,89页

作者：梁天翔刘凯辉太原科技大学山西太原030024 河北华北石油荣盛机械制造有限公司河北沧州062550

在物流服务业中,信息技术能力和创新开放性被视为推动创新的关键因素。信息技术能力不仅能够优化物流流程,提高服务效率,还能为客户提供更优质的服务体验。同时,具备创新开放性的物流企业能更敏锐地洞察市场需求,迅速响应并推出创新服务... 详细信息

在物流服务业中,信息技术能力和创新开放性被视为推动创新的关键因素。信息技术能力不仅能够优化物流流程,提高服务效率,还能为客户提供更优质的服务体验。同时,具备创新开放性的物流企业能更敏锐地洞察市场需求,迅速响应并推出创新服务,从而在激烈的市场竞争中脱颖而出。这两大要素的融合,为物流服务业带来转型升级的新机遇,推动行业的持续性发展。因此,物流企业应重视提升信息技术能力,培养创新开放性思维,以更好地适应市场变化,满足客户需求,实现企业的长远发展。

关键词：信息技术能力创新开放性物流服务业服务创新转型升级

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Atomic-scale imaging of the defect dynamics in ceria nanowires under heating by in situ aberration-corrected TEM

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Science China Chemistry 2019年第12期62卷 1704-1709页

作者： Xiaomin Li kaihui liu Wenlong Wang Xuedong Bai International Center for Quantum Materials and School of Physics Peking UniversityBeijing 100871China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Songs han Lake Materials Laboratory Dongguan 523808China School of Physical Science University of Chinese Academy of SciencesBeijing 100049China

The defects in the ceria usually work as the active reaction sites in their industrial *** this article,we studied the formation and atomic process of the defects of ceria nanowires under heating by using in situ aberration-corrected transmission electron microscopy(Cs-TEM)*** the temperature elevating,ceria nanowires are reduced and defects begin to appear and grow *** temperature reaches 1,023 K,the defect morphology exhibits the rhombus or hexagon patterns,which are surrounded by{111}and{200}planes with lower surface energy,and the heated ceria still maintain the same cubic fluorite structure as their *** is also indicated that the formation of defects originates from the release of lattice oxygen and the volatilization of surface Ce *** work provides an important insight into designing ceria-based catalysts and ionic conductors.

关键词： ceria defects heating in situ transmission electron microscopy

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Graphene-integrated waveguides:Properties,preparation,and applications

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Nano Research 2022年第11期15卷 9704-9726页

作者： Kaili Chang Zenghui Li Yuzong Gu kaihui liu Ke Chen Center for the Physics of Low-Dimensional Materials School of Physics and ElectronicsHenan UniversityKaifeng 475004China State Key Laboratory for Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China

Graphene-integrated waveguides(GIWGs)have shown immense potential for applications in next-generation datacom technology due to graphene’s compactness and its functional complementarity with traditional optical ***,the fabrication techniques of GIWGs lack scalability for commercial *** we discuss the recent developments of GIWGs in two-dimensional optoelectronics by focusing on their properties,wave–matter interaction mechanisms,and fabrication *** highlight representative advances on the advantages and potential applications of GIWGs in telecom ***,we outline major challenges and development trends to bridge the gap between proof-of-concept demonstrations and practical applications.

关键词： graphene waveguide integration process optoelectronics two-dimensional materials

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无菌金黄地鼠模型建立

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中国比较医学杂志 2024年第8期34卷 87-93页

作者：郭亚茜杜晓鹏刘凯慧王昭华朱华中国医学科学院医学实验动物研究所国家动物模型技术创新中心国家卫生健康委比较医学重点实验室国家人类疾病动物模型资源库北京100021

目的使用剖宫产净化(cesarean section purification)方法建立无菌金黄地鼠模型。方法供胎母鼠选择SPF级金黄地鼠,雌雄按1∶1进行交配,见栓后与雄鼠分开饲养。代乳母鼠的合笼时间应早于供胎母鼠一周。怀孕的金黄地鼠临产时在超净工作台... 详细信息

目的使用剖宫产净化(cesarean section purification)方法建立无菌金黄地鼠模型。方法供胎母鼠选择SPF级金黄地鼠,雌雄按1∶1进行交配,见栓后与雄鼠分开饲养。代乳母鼠的合笼时间应早于供胎母鼠一周。怀孕的金黄地鼠临产时在超净工作台内进行子宫摘除术,传入净化用隔离包内,剥离子宫获得待净化乳鼠,分别使用无菌级ICR小鼠和无菌级SD大鼠进行代乳,成功离乳后转入饲养用隔离包内。每月对饲养用隔离包进行无菌状态检测。结果共实施3次剖宫产手术,第1次和第2次代乳失败,第3次代乳成功,获得仔鼠18只,存活率88%,离乳存活率66%,依照GB/T 14926.41-2001进行无菌金黄地鼠状态检测均为合格。结论通过剖宫产净化技术,使用无菌级ICR小鼠和无菌级SD大鼠进行代乳,达到微生物净化目的,获得无菌化金黄地鼠模型。

关键词：金黄地鼠无菌动物剖宫产净化隔离器

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