Towards growth of pure AB-stacked bilayer graphene single crystals
作者机构:Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of MatterGuangdong Provincial Key Laboratory of Quantum Engineering and Quantum MaterialsSchool of PhysicsSouth China Normal UniversityGuangzhou 510006China Guangdong-Hong Kong Joint Laboratory of Quantum MatterSchool of PhysicsSouth China Normal UniversityGuangzhou 510006China Physical Science and Engineering DivisionKing Abdullah University of Science and TechnologyThuwal 23955–6900Saudi Arabia State Key Laboratory for Mesoscopic PhysicsFrontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing 210094China International Centre for Quantum MaterialsCollaborative Innovation Centre of Quantum MatterPeking UniversityBeijing 100871China Songshan Lake Materials LaboratoryInstitute of PhysicsChinese Academy of SciencesDongguan 523808China
出 版 物:《Nano Research》 (纳米研究(英文版))
年 卷 期:2024年第17卷第5期
页 面:4616-4621页
核心收录:
学科分类:0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
基 金:supported by Guangdong Basic and Applied Basic Research Foundation(Nos.2020B1515020043,2023A1515012743) Guangdong Major Project of Basic and Applied Basic Research(No.2021B0301030002) the National Natural Science Foundation of China(Nos.12322406,52102043,61905215,52025023,51991342,52021006) the Key R&D Program of Guangdong Province(No.2020B010189001) the National Key R&D Program of China(No.2022YFA1403500) the Pearl River Talent Recruitment Program of Guangdong Province(No.2019ZT08C321) the Key Project of Science and Technology of Guangzhou(No.202201010383)
主 题:bilayer graphene AB stacking uniform growth heat-resisting box
摘 要:Given its intriguing band structure and unique tunable bandgap,AB-stacked bilayer graphene has great potentials in the applications of high-end electronics,optoelectronics and *** epitaxial growth of AB-stacked single-crystal bilayer graphene films requires a strict AB-stacked lattice,identical orientations and seamless stitching of bilayer graphene ***,the particles inevitably present on the metal surface that produced during high temperature growth would induce random orientations,twisted stacking islands,and uncontrollable multilayers,which is a great challenge to ***,we propose a heat-resisting-box assisted strategy to produce nearly pure AB-stacked bilayer graphene single-crystal films on Cu/Ni(111)*** our technique,the particles on the Cu/Ni(111)surface are effectively eliminated,which greatly minimizes the occurrence of randomly twisted islands and uncontrollable *** as-grown AB-stacked bilayer graphene films show99%alignment and99%AB stacking *** work provides a promising method towards the growth of pure AB-stacked bilayer graphene single crystals and would accelerate its device applications.