检索结果-南通市图书馆

Extended Gate Field Effect Transistor Based Measuring of the Vitamin C content of Orange Juice

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 342-343页

作者： jung-chuan chou Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

An extended-gate field effect transistor (EGFET)of SnO_2/ITO glass was applied to manufacture the vitamin C ***,we immobilized the ascorbate oxidase with 3-glycidoxypropyltrimethoxysilane (GPTS)method to measure the different concentrations of the vitamin C solution in an optimum measurement *** order to find the best measurement conditions of the biosensor,we studied the vitamin C sensor in different pH values of the phosphate buffer solution (PBS).Additionally,we used experimental results to discuss the response time and response voltage to compare vitamin C with orange juice for the vitamin C sensor.

关键词： orange juice extended-gate field effect transistor SnO2/ITO glass vitamin C sensor

Study of Non-Ideal Effects for Extended Gate Field Effect Transistor Chlorine Ion Sensing Device

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 242-243页

作者： jung-chuan chou Pei-Lan chou Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China Graduate School of Optoelectronics National Yunlin University of Science and TechnologyDouliouTaiwan 640China

We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is *** surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion *** will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.

关键词： extended gate field effect transistor chlorine ion ionophore chlorine ion sensing device temperature effect hysteresis effect drift effect

Study on the Carbon Nanotube Separative Structure for the Extended Gate H^+-Ion Sensitive Field Effect Transistor

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 225-227页

作者： Yi-Hung Liao jung-chuan chou Graduate School of Engineering Science and Technology National Yunlin University of Science and TechnologyDouliouYunlinTaiwan 640China

We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) *** CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing *** measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement *** to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.

关键词： carbon nanotube extended gate field effect transistor pH sensitivity buffer solution

Study on the Drift Effect of Potassium Ion Sensing Based on the Extended Gate Field Effect Transistor

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 259-260页

作者： jung-chuan chou Ching-Hsiang Hsu Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better *** EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with *** can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S *** study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium *** fabrication of the potassium ion sensor can be widely employed in medical detection.

关键词： potassium ion extended gate field effect transistor RuO_x/Si wafer sensitivity drift

Study the Characteristics of Titanium Oxide Hydrogen Ion Sensor Using XRD and AES

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 250-251页

作者： jung-chuan chou Hung-Hsi Yang Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

We study the extended gate ion sensitive structure,and deposit the titanium oxide (TiO_2) thin film on p-type (100) silicon *** device of the hydrogen ion sensing structure is TiO_2/Si-substrate,and a commercial device of the metal oxide semiconductor field effect transistor (MOSFET) is connected to the separative sensing *** sensitivity and linearity are measured under different work *** the mixed ratio of Ar/O_2 is 80 ml·min^(-1)/20 ml·min^(-1),the work pressure is 4 Pa,the sputtering power is 150 W,and the sputtering time is two hours,the better sensing properties of the sensitivity and linearity are 36.49 mV/pH and 0.99654,***,some instruments are analyzed the surface of TiO_2 membrane,such as X-ray diffraction (XRD) and Auger Electron Spectrometer (AES).The characteristics of TiO_2 thin film can be demonstrated.

关键词： titanium oxide separative sensing device sensitivity linearity X-ray diffraction auger electron spectrometer

Study on the High Conductive Polymer as the Miniaturized Reference Electrode

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 254-255页

作者： jung-chuan chou Chien-Cheng Chen Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The polypyrrole is the high conductive polymer which was coated onto indium tin oxide (ITO) glass substrate by electroplated technique to fabricate a miniaturized reference ***,the morphology of the ITO glass reference electrode electroplated with pyrrole has been studied through the instrumental analysis utilizing cyclic voltammetry (CV). Furthermore,the sensing characteristics of the reference electrode have been measured by using commercial instrumental amplifier as the readout *** the high conductive polymer as miniaturized reference electrode has many advantages such as easy fabrication of coating polymer,without any expensive fabricating equipment,easy carry by the miniaturized ***,it is suitable for the reference electrode production.

关键词： miniaturized reference electrode polypyrrole conductive polymer cyclic voltammetry

Study of Drift Behavior for RuO_x Sensing Membrane with Penicillinase Immobilized by GPTS

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 228-229页

作者： jung-chuan chou Sheng-Hung Chen Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The ruthenium oxide(RuO_x) thin film was prepared by using the *** *** RuO_x pH-sensitive electrode possesses a nearly-Nernstian pH sensitivity(about 57 mV/pH).For the enzyme penicillinase was immobilized directly onto a RuO_x pH-sensitive surface by 3-glycidoxypropyltrimethoxysilane(GPTS).Some characteristics of the biosensor, such as sensitivity,linear range,and drift,are investigated and the difference between penicillinase immobilized and without are *** to the time-constant model,we can extract the time constant and amplitude at the response curve of the ***,the extracted parameters were used to simulate the mechanism of the drift behavior.

关键词： ruthenium oxide pH-sensitive electrode penicillinase drift behavior

Study of Reducing Non-Ideal Effects Based on TiN Sensitive Electrode with Front-End Offset Circuit

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 248-249页

作者： jung-chuan chou Cheng-Hsin Liu Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The structure of the extended gate ion sensitive field effect transistor (EGISFET) is similar to the structure of the ion sensitive field effect transistor (ISFET).Moreover,the non-ideal effect of EGISFET is the main impediment to development of commercial processes for sensitive *** is necessary to promote the stability and reliability of the devices by employing calibration circuits and the better fabrication *** temporal drift exists in the entire measurement experiment. Furthermore,in this study we can reduce the temporal drift effect which influences the stability of the TiN sensitive electrode with the differential front-end offset *** measurement system combines with shifting circuit,differential and instrument *** employ the calibration circuit to compare with the variations of the output voltage,and expectably improve the stability and reliability of the TiN sensitive electrode by the novel calibration circuit.

关键词： TiN sensitive electrode stability reliability temporal drift effect front-end offset circuit

Study on the Characteristics of the Ruthenium Oxide pH Electrode

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2006年第A3期35卷 256-258页

作者： jung-chuan chou Diing-Jia Tzeng Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

Ruthenium oxide,which fabricated by radio frequency sputtering is used as the sensitive membrane,which shows that the pH sensitivity is very high and has a linear response in different buffer *** pH electrode,which applies the structure of separative structure EGFET (Extended Gate Field Effect Transistor) insteads of the conventional gate ISFET (Ion Sensitive Field Effect Transistor) for reducing the cost of the fabrication and ***,the performance of the pH sensor was falsified by the drift and *** addition,the total response is composed of the intrinsic response and drift,and the hysteresis effect combines the slow response with ***,we would also investigate the drift in the buffer solutions and hysteresis effect in the different *** this way,the more accurate sensing properties are obtained by the RuO_x pH electrode.

关键词： ruthenium oxide EGFET drift hysteresis