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涉外数字经济人才培养的产教融合模式与实施路径探究——基于中国—东盟扩大数字合作的背景

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昆明冶金高等专科学校学报 2024年第1期40卷 20-25页

作者：李瑾郭静姝吴扬昆明冶金高等专科学校外语学院(东盟国际学院) 云南昆明650033 昆明冶金高等专科学校艺术设计学院云南昆明650033 昆明冶金高等专科学校通识与素质教育学院云南昆明650033

随着中国—东盟数字合作深入发展,数字人才人力资源不足已经制约着中国与东盟乃至世界各国的经济合作,加强产教融合是培养高素质人才的重要途径之一。分析了数字经济背景下对人才培养需求的新趋势,基于东盟和中国数字经济发展的新态势,... 详细信息

随着中国—东盟数字合作深入发展,数字人才人力资源不足已经制约着中国与东盟乃至世界各国的经济合作,加强产教融合是培养高素质人才的重要途径之一。分析了数字经济背景下对人才培养需求的新趋势,基于东盟和中国数字经济发展的新态势,提出在数字经济时代,产教融合具有明显的优势,也面临新的挑战。在东盟国家推动数字经济发展的过程中,数字经济人才需求要结合产教融合的推进,要在政策支持体系、数字基础设施建设体系、数字人才培养实施体系、产业集群和专业集群优化体系、数字技术标准和规则制定机制、数字安全与纠纷调解的深度合作机制“四体系二机制”方面大力拓展和推进。

关键词：数字经济数字人才培养产教融合模式 “四体系两机制”

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植物仿生在公共艺术设计中的应用

昆明冶金高等专科学校学报 2024年第1期40卷 93-99页

作者：张凯郭静姝黄腾龙云南艺术学院设计学院云南昆明650500 昆明冶金高等专科学校艺术设计学院云南昆明650033

植物作为自然界的杰作之一,具有独特的形态和功能,通过植物仿生进行设计能够为艺术创作者提供更多设计灵感。结合植物仿生设计的理论基础、优秀设计案例,深入研究植物仿生设计在公共艺术创作中应用的具体方法;探讨植物仿生公共艺术的应... 详细信息

植物作为自然界的杰作之一,具有独特的形态和功能,通过植物仿生进行设计能够为艺术创作者提供更多设计灵感。结合植物仿生设计的理论基础、优秀设计案例,深入研究植物仿生设计在公共艺术创作中应用的具体方法;探讨植物仿生公共艺术的应用价值;最终结合研究内容进行实际的设计创作。期望通过植物仿生设计,将自然界中的美妙景观融入到公共艺术作品创作中,为城市环境增添艺术和生机。

关键词：植物仿生公共艺术应用价值设计实践

植物造景在高校景观设计中的运用——以昆明冶金高等专科学校为例

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昆明冶金高等专科学校学报 2024年第1期40卷 100-106页

作者：张馨文郭静姝曾文曦昆明冶金高等专科学校后勤与基建管理中心云南昆明650033 昆明冶金高等专科学校艺术设计学院云南昆明650033

通过对植物景观的需求探讨,提出高校植物造景的相关原则,结合昆明冶金高等专科学校安宁校区重要节点植物景观的实例,分析其植物配置特点及不足,并对高校绿化景观建设提出相关建议。

关键词：植物造景景观设计植物配置

Silicon/2D-material photodetectors: from nearinfrared to mid-infrared

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Light(Science & Applications) 2021年第7期10卷 1164-1184页

作者： Chaoyue Liu jingshu guo Laiwen Yu Jiang Li Ming Zhang Huan Li Yaocheng Shi Daoxin Dai State Key Laboratory for Modern Optical Instrumentation Zhejiang Provincial Key Laboratory for Sensing TechnologiesCollege of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang UniversityZijingang CampusHangzhou 310058China Ningbo Research Institute Zhejiang UniversityNingbo 315100China

Two-dimensional materials(2DMs)have been used widely in constructing photodetectors(PDs)because of their advantages in flexible integration and ultrabroad operation wavelength ***,2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications.2DM PDs meet the imperious demand of silicon photonics on low-cost,high-performance,and broadband *** this work,a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared,which are attractive for many *** operation mechanisms and the device configurations are summarized in the first *** waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details,*** discussion and outlook for 2DM PDs on silicon are finally given.

关键词： waveguide attractive details

Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU jingshu guo Pengwen guo Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

Osteoblastic and anti-osteoclastic activities of strontium-substituted silicocarnotite ceramics: In vitro and in vivo studies

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Bioactive Materials 2020年第3期5卷 435-446页

作者： Junkai Zeng jingshu guo Zhenyu Sun Fanyan Deng Congqin Ning Youzhuan Xie Shanghai Key Laboratory of Orthopaedic Implants Department of Orthopaedic SurgeryShanghai Ninth People's HospitalShanghai Jiaotong University School of MedicineShanghaiChina State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai200050China

Osteoporosis bone defect is a refractory orthopaedic disease which characterized by impaired bone quality and bone regeneration *** therapies,including antiosteoporosis drugs and artificial bone grafts,are not always ***,a strontium-substituted calcium phosphate silicate bioactive ceramic(Sr-CPS)was *** the present study,the extracts of Sr-CPS were prepared for in vitro study and Sr-CPS scaffolds were used for in vivo *** cytocompatibility,osteogenic and osteoclastogenic properties of Sr-CPS extracts were characterized in comparison to *** mechanisms were also evaluated by Western ***-CPS extracts were found to promote osteogenesis by upregulating Wnt/β-catenin signal pathways and inhibit osteoclastogenesis through downregulating NF-κB signal *** vivo,micro-CT,histological and histomorphometric observation were conducted after 8 weeks of implantation to evaluate the bone formation using calvarial defects model in ovariectomized *** with CPS,Sr-CPS significantly promoted critical sized ovariectomy(OVX)calvarial defects *** all the samples,Sr-10 showed the best performance due to a perfect match of bone formation and scaffold degradation ***,the present study demonstrated that Sr-CPS ceramic can dually modulate both bone formation and resorption,which might be a promising candidate for the reconstruction of osteoporotic bone defect.

关键词： Strontium Bioceramics Osteoblastic Osteoclastic Silicocarnotite

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

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Science China(Information Sciences) 2022年第10期65卷 285-292页

作者： Siyu LIU Xiaohua MA Jiejie ZHU Minhan MI jingshu guo Jielong LIU Yilin CHEN Qing ZHU Ling YANG Yue HAO Key Laboratory of Wide Bandgap Semiconductor Technology School of Microelectronics Xidian University School of Advanced Materials and Nanotechnology Xidian University

The etching process of high-performance recessed-gate In Al N/Ga N high-electron mobility transistors(HEMTs) has been actively researched. This paper proposes a post-etching self-limited surface restoration method that effectively suppresses the etching damage, enhancing the transport properties of recessed-gate In Al N/Ga N HEMTs. We fabricated planar-gate devices, inductively coupled plasma(ICP)-etched devices, and post-etching-treated(PET) devices. The damage caused by the ICP etching process severely deteriorated the transport properties of the devices. However, the post-etching process effectively inhibited the etching damage and improved the device transport properties. Through temperature-dependent tests and a simulation, the change in the peak transconductance was compared among different devices. The temperature-dependent optical phonon scattering and impurity-dependent remote charge scattering mechanisms were analyzed. The results confirmed that the etching damage significantly affected the channel electron scattering mechanism. The field-effect mobility showed a linear relationship with temperature, and the optical phonon scattering model illustrated that the field-effect mobility decreased with increasing temperature. The etching damage caused a decrease in the field-effect mobility from 1075.5 to 699.1 cm~2/V·s,which increased the fitting error between this empirical line and the optical phonon scattering fitting curve from 0.086 to 0.948, similar to the remote charge scattering fitting curve. The combined error range is from 0.896 to 0.054.

关键词： GaN InAlN/GaN HEMTs etching damage scattering mechanism

High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55μm

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Light(Science & Applications) 2020年第1期9卷 1731-1741页

作者： jingshu guo Jiang Li Chaoyue Liu Yanlong Yin Wenhui Wang Zhenhua Ni Zhilei Fu Hui Yu Yang Xu Yaocheng Shi Yungui Ma Shiming Gao Limin Tong Daoxin Dai State Key Laboratory for Modern Optical Instrumentation Zhejiang Provincial Key Laboratory for Sensing TechnologiesCollege of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang UniversityZijingang Campus310058 HangzhouChina Ningbo Research Institute Zhejiang University315100 NingboChina Department of Physics and Key Laboratory of MEMS of the Ministry of Education Southeast University211189 NanjingChina College of Information Science and Electronic Engineering Zhejiang University310027 HangzhouZhejiangChina

Graphene has attracted much attention for the realization of high-speed photodetection for silicon photonics over a wide wavelength ***,the reported fast graphene photodetectors mainly operate in the 1.55μm wavelength *** this work,we propose and realize high-performance waveguide photodetectors based on bolometric/photoconductive effects by introducing an ultrathin wide silicon−graphene hybrid plasmonic waveguide,which enables efficient light absorption in graphene at 1.55μm and *** operating at 2μm,the present photodetector has a responsivity of ~70 mA/W and a setup-limited 3 dB bandwidth of >20 *** operating at 1.55μm,the present photodetector also works very well with a broad 3 dB bandwidth of >40 GHz(setup-limited)and a high responsivity of ~0.4 A/W even with a low bias voltage of−0.3 *** work paves the way for achieving highresponsivity and high-speed silicon-graphene waveguide photodetection in the near/mid-infrared ranges,which has applications in optical communications,nonlinear photonics,and on-chip sensing.

关键词： waveguide beyond performance

致密砂岩压裂后的储层敏感性特征实验——以四川盆地JQ地区沙溪庙组8号砂体为例

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天然气勘探与开发 2024年第3期47卷 85-93页

作者：汪煜昆赵丹刘婷芝淦文杰王永强张清秀郭静姝中国石油西南油气田公司川中油气矿四川遂宁629000 中国石油西南油气田公司勘探开发研究院四川成都610041

随着油气勘探开发向非常规领域深入,压裂等储层改造措施的应用越来越广泛。为了深入认识储层特性,了解储层潜力,预测储层改造后敏感性特征变化,从而进行合理的储层保护措施,有必要开展储层岩心模拟改造后的敏感性实验,明确储层改造措施... 详细信息

随着油气勘探开发向非常规领域深入,压裂等储层改造措施的应用越来越广泛。为了深入认识储层特性,了解储层潜力,预测储层改造后敏感性特征变化,从而进行合理的储层保护措施,有必要开展储层岩心模拟改造后的敏感性实验,明确储层改造措施对储层敏感性特征的影响。基于钻井获取岩心,在薄片鉴定、X射线衍射、扫描电镜分析以及压汞测试实验等手段的基础上,开展不同压力、温度、流体化学性质等条件下的流动实验,以评估储层的敏感性特征。通过对比改造前后岩心敏感性实验结果的差异,分析储层改造措施对储层敏感性特征的影响。结果表明:①模拟储层改造后中侏罗统沙溪庙组8号砂体岩心出现网状裂缝,渗透率相比改造前平均提升167%。②改造之前的JQ地区沙溪庙组岩心具有中等偏弱速敏、强水敏、弱盐敏、弱碱敏、弱酸敏的特征;改造后,速敏、盐敏等敏感性特征没有改变,而水敏由强转弱,强水敏的样品比例由93%下降到17%。③综合分析改造后敏感性特征,改造后岩心的水敏程度较改造前下降,出现弱水敏和无水敏的结果,因此需要增加储层改造措施的影响范围,以此提升储层流体流动能力。

关键词：致密砂岩渗流实验储层改造敏感性特征 CT扫描