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On the evaluation of ALD TiO_(2),ZrO_(2) and HfO_(2) coatings on corrosion and cytotoxicity performances

Journal of Magnesium and Alloys 2021年第5期9卷 1828-1841页

作者： Mirco Peron Susanna Cogo Maria Bjelland Abdulla Bin Afif Anup Dadlani Elisa Greggio Filippo Berto jan torgersen Department of Industrial and Mechanical Engineering Norwegian University of Science and TechnologyRichard Birkelands vei 2b7034 TrondheimNorway Department of Biology University of PadovaVia Ugo Bassi 58/b35131PadovaItaly

Magnesium alloys have been widely studied as materials for temporary implants,but their use has been limited by their corrosion ***,coatings have been proven to provide an effective *** only little explored in the field,Atomic Layer Deposition(ALD)stands out as a coating technology due to the outstanding film conformality and density ***,we provide first insights into the corrosion behavior and the induced biological response of 100 nm thick ALD TiO_(2),HfO_(2)and ZrO_(2)coatings on AZ31 alloy by means of potentiodynamic polarization curves,electrochemical impedance spectroscopy(EIS),hydrogen evolution and MTS colorimetric assay with L929 *** three coatings improve the corrosion behavior and cytotoxicity of the ***,HfO_(2)coatings were characterized by the highest corrosion resistance and cell viability,slightly higher than those of ZrO_(2)***_(2)was characterized by the lowest corrosion improvements and,though generally considered a biocompatible coating,was found to not meet the demands for cellular applications(it was characterized by grade 3 cytotoxicity after 5 days of culture).These results reveal a strong link between biocompatibility and corrosion resistance and entail the need of taking the latter into consideration in the choice of a biocompatible coating to protect degradable Mg-based alloys.

关键词： Atomic layer deposition(ALD) Coatings Corrosion resistance Cytocompatibility Magnesium

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The interface of SiO_2/ZnS films studied by high resolution X-ray photoluminescence

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Theoretical & Applied Mechanics Letters 2018年第1期8卷 24-27页

作者： Shinjita Acharya Orlando Trejo Anup Dadlani jan torgersen Filippo Berto Fritz Prinz Department of Mechanical Engineering Stanford University Department of Chemistry Stanford University Department of Mechanical and Industrial Engineering Norwegian University of Science and Technology Department of Materials Science and Engineering Stanford University

Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its benefits as buffer layer, ZnS deposited via atomic layer deposition(ALD) renders intermixed interfaces to its substrate, which can be detrimental for device performance. Here, we are attempting to elucidate the chemical species deriving from this metal-oxide to metal-sulfide transition studying ultrathin film ZnS on SiO_2 using high resolution X-ray photoluminescence spectroscopy(XPS).Regarding the S 2p spectra after a deposition of only three cycles of ZnS, we discover the many different chemical species in which S is present. These include intermediate oxides such as SO_4^(2-).These species become more obvious as we tilt the sample in the XPS chamber to shallower *** the Si 2p and S 2p high resolution peaks in the depth profile, one can clearly uncover the confinement of SO_4^(2-) to the interface of the underlying substrate. This may indicate that SiO_2/ZnS interfaces contain interfacial sulphates that likely alter the electronic configuration of this interface.

关键词： Atomic Layer Deposition Metal-Sulfide Zinc Sulfide Interface High resolution X-ray photoluminescence spectroscopy

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