The interface of SiO_2/ZnS films studied by high resolution X-ray photoluminescence

作     者：Shinjita Acharya Orlando Trejo Anup Dadlani Jan Torgersen Filippo Berto Fritz Prinz 

作者机构：Department of Mechanical EngineeringStanford University Department of ChemistryStanford University Department of Mechanical and Industrial EngineeringNorwegian University of Science and Technology Department of Materials Science and EngineeringStanford University 

出 版 物：《Theoretical & Applied Mechanics Letters》 (力学快报（英文版）)

年 卷 期：2018年第8卷第1期

页      面：24-27页

核心收录：

学科分类：08[工学] 0801[工学-力学（可授工学、理学学位）] 

基　　金：support from Center on Nanostructuring for Efficient Energy Conversion(CNEEC)at Stanford University,an Energy Frontier Research Center funded by the U.S.Department of Energy,Office of Science,Office of Basic Energy Sciences under Award Number DESC0001060 the Austrian Research Fund(FWF)under the contract J3505-N20 

主　　题：Atomic Layer Deposition Metal-Sulfide Zinc Sulfide Interface High resolution X-ray photoluminescence spectroscopy 

摘      要：Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its benefits as buffer layer, ZnS deposited via atomic layer deposition(ALD) renders intermixed interfaces to its substrate, which can be detrimental for device performance. Here, we are attempting to elucidate the chemical species deriving from this metal-oxide to metal-sulfide transition studying ultrathin film ZnS on SiO_2 using high resolution X-ray photoluminescence spectroscopy(XPS).Regarding the S 2p spectra after a deposition of only three cycles of ZnS, we discover the many different chemical species in which S is present. These include intermediate oxides such as SO_4^(2-).These species become more obvious as we tilt the sample in the XPS chamber to shallower *** the Si 2p and S 2p high resolution peaks in the depth profile, one can clearly uncover the confinement of SO_4^(2-) to the interface of the underlying substrate. This may indicate that SiO_2/ZnS interfaces contain interfacial sulphates that likely alter the electronic configuration of this interface.