The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se_(2)based solar cells is *** fabrication used an industry scalable lithography technique—nanoimprint lithography(NIL)—for a 15×15 cm^(2)...
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The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se_(2)based solar cells is *** fabrication used an industry scalable lithography technique—nanoimprint lithography(NIL)—for a 15×15 cm^(2)dielectric layer *** with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography(EBL)patterning,using rigid *** NIL patterned device shows similar performance to the EBL patterned *** impact of the lithographic processes in the rigid solar cells’performance were evaluated via X-ray Photoelectron Spectroscopy and through a Solar Cell Capacitance *** device on stainless-steel showed a slightly lower performance than the rigid approach,due to additional challenges of processing steel substrates,even though scanning transmission electron microscopy did not show clear evidence of impurity ***,time-resolved photoluminescence results strongly suggested elemental diffusion from the flexible ***,bending tests on the stainless-steel device demonstrated the mechanical stability of the CIGS-based device.
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