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Bilateral Gravidic Gigantomastia at the Gynecological and Obstetrical Clinic of Dantec:A Case Report

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Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light

Open Journal of Obstetrics and Gynecology（妇产科期刊） 2022年第9期

作者： ibrahim rahadat astou coly niassy ibrahima sitor sarr aissatou sankharé mouhamed yahya dede alioune ndiaye dia moussa diallo marie-édouard faye jean-charles moreau

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World Journal of Condensed Matter Physics 2016年第3期6卷 261-268页

作者： ibrahima Diatta ibrahima Ly Mamadou Wade Marcel sitor Diouf Senghane Mbodji Grégoire Sissoko Physics Department Faculty of Sciences and Techniques University of Cheikh Anta Diop Dakar Senegal Electromechanical Engineering Department Polytechnic School of Thies University Thies Senegal University of Alioune DIOP Bambey Senegal

In static regime with polychromatic illumination, using the expression of the solar cell capacitance to determine the silicon solar cell capacitance C0(T) in short-circuit, is the purpose of this article. The expression of the excess minority carries density δ(x) from the continuity equation. The expression of δ(x) is used to determine the photovoltage expression. The capacitance efficiency dependence on Xcc(T) is studied. Xcc(T) is the abscissa of the maximum of δ(x).

关键词： Solar Cell Capacitance Temperature

Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

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Journal of Modern Physics 2018年第2期9卷 189-201页

作者： Ousmane Diasse Amadou Diao Mamadou Wade Marcel sitor Diouf ibrahima Diatta Richard Mane Youssou Traore Gregoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Laboratory of Sciences and Techniques of Water and Environment Polytechnic School of Thiès Thiès Senegal

In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe, Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier’s density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.

关键词： Silicon Solar Cell Surface Recombination Velocity Thickness

Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field

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Energy and Power Engineering 2019年第10期11卷 355-361页

作者： Seydina Diouf Mor Ndiaye Ndeye Thiam Youssou Traore Mamadou Lamine Ba ibrahima Diatta Marcel sitor Diouf Oulimata Mballo Amary Thiam ibrahima Ly Grégoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Electromechanical Department Polytechnic School of Thiès Thiès Senegal.

In this study, the effects of temperature and frequency on minority carrier diffusion coefficient in silicon solar cell under a magnetic field are presented. Using two methods (analytic and graphical), the optimum temperature corresponding to maximum diffusion coefficient is determined versus cyclotronic frequency and magnetic field.

关键词： Solar Cell Diffusion Coefficient Temperature Magnetic Field Frequency

Irradiation Energy Effect on a Silicon Solar Cell: Maximum Power Point Determination

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Journal of Modern Physics 2018年第12期9卷 2141-2155页

作者： Mamadou Lamine Ba Hawa Ly Diallo Hamet Yoro Ba Youssou Traore ibrahima Diatta Marcel sitor Diouf Mamadou Wade Gregoire Sissoko Laboratory of Sciences and Techniques of Water and Environment Polytechnic School of Thiès Thiès Senegal Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal

The aim of this study is to determinate the electrical parameters of a white biased silicon solar cell submitted to an irradiation energy of particles (protons, helium, electrons and heavy ions). A theoretical study of the influence of irradiation energy on the photocurrent density, the photovoltage, the maximum power, as well as the maximum efficiency of the solar cell is presented through a resolution of the continuity equation relative to excess minority carrier. Then the expressions of the photocurrent density Jph, the photovoltage Vph, and the excess minority carrier recombination velocity at the back side Sb are established dependent of irradiation parameters ∅p, Kl respectively irradiation flux and intensity. In this work, we propose a method for determining the recombination velocity of the excess minority carrier at the junction Sfmax corresponding to the maximum power point delivered by the photovoltaic generator under the influence of the irradiation. It is then obtained by calculating the derivative of the power with respect to the excess minority carrier recombination velocity Sf at the junction emitter-base. A transcendental equation solution is deduced as eigenvalue, leading to the junction recombination velocity of excess minority carrier and also yields the solar cell maximum conversion efficiency.

关键词： Silicon Solar Cell Irradiation Electrical Parameters Maximum Power Point

Quality of Well Water Used for Market Gardening from Lendeng Area Located in Common of Rufisque (Senegal)

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Journal of Agricultural Chemistry and Environment 2022年第4期11卷 277-284页

作者： Birame Ndiaye Momar Ndiaye Benita Pérez Cid Abdoulaye Diop ibrahima Diagne Dame Cissé Cheikh Tidiane Dione Maoudo Hane Mame Mor Dione sitor Diouf Seydou Ba Department of Chemistry Faculty of Science and Technology Cheikh Anta Diop University of Dakar Dakar Senegal Department of Analytical and Food Chemistry Faculty of Chemistry University of Vigo Vigo Spain

This study analysis was conducted to know the quality of well water around the market gardening area of Lendeng located in the common of Rufisque Est (Senegal). In this study, six groundwater samples were taken near the Lendeng market gardening area. The physicochemical parameters of water such as pH, temperature, electrical conductivity (EC), calcium (Ca2+), magnesium (Mg2+), potassium (K+), iron (Fe2+), chloride (Cl-), sulfate (SO3-4) and phosphate (PO3-4) were measured. The analysis results obtained show sulphate and phosphate have the highest levels. These results were compared to drinking water standards from the World Health Organization (WHO). The correlation coefficient ANOVA was applied to the test result of the samples. The statistical study showed that the well water in the market gardening area of Lendeng is not polluted.

关键词： Physicochemical Parameters Well Water Lendeng Market Gardening Rufisque

AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature

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Journal of Modern Physics 2019年第10期10卷 1235-1246页

作者： Youssou Traore Ndeye Thiam Moustapha Thiame Amary Thiam Mamadou Lamine Ba Marcel sitor Diouf ibrahima Diatta Oulymata Mballo El Hadji Sow Mamadou Wade Grégoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Laboratory of Sciences and Techniques of Water and Environment Polytechnic School of Thiès Thiès Senegal University Assane SECK Ziguinchor Senegal

The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.

关键词： Vertical Multi-Junctions Solar Cell AC Back Surface Recombination Velocity Temperature Bode and Nyquist Diagrams

Influence of Temperature and Frequency on Minority Carrier Diffusion Coefficient in a Silicon Solar Cell under Magnetic Field

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