Irradiation Energy Effect on a Silicon Solar Cell: Maximum Power Point Determination
Irradiation Energy Effect on a Silicon Solar Cell: Maximum Power Point Determination作者机构：Laboratory of Sciences and Techniques of Water and Environment Polytechnic School of Thiès Thiès Senegal Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal
出 版 物：《Journal of Modern Physics》 (现代物理（英文）)
年 卷 期：2018年第9卷第12期
页 面：2141-2155页
学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学]
主 题：Silicon Solar Cell Irradiation Electrical Parameters Maximum Power Point
摘 要：The aim of this study is to determinate the electrical parameters of a white biased silicon solar cell submitted to an irradiation energy of particles (protons, helium, electrons and heavy ions). A theoretical study of the influence of irradiation energy on the photocurrent density, the photovoltage, the maximum power, as well as the maximum efficiency of the solar cell is presented through a resolution of the continuity equation relative to excess minority carrier. Then the expressions of the photocurrent density Jph, the photovoltage Vph, and the excess minority carrier recombination velocity at the back side Sb are established dependent of irradiation parameters ∅p, Kl respectively irradiation flux and intensity. In this work, we propose a method for determining the recombination velocity of the excess minority carrier at the junction Sfmax corresponding to the maximum power point delivered by the photovoltaic generator under the influence of the irradiation. It is then obtained by calculating the derivative of the power with respect to the excess minority carrier recombination velocity Sf at the junction emitter-base. A transcendental equation solution is deduced as eigenvalue, leading to the junction recombination velocity of excess minority carrier and also yields the solar cell maximum conversion efficiency.
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