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Ultrasensitive Indium Phosphide Nanomembrane Wearable Gas Sensors

Energy & Environmental Materials 2024年第6期7卷 209-217页

作者： Shiyu Wei Tuomas Haggren Zhe Li hark hoe tan Chennupati Jagadish Antonio Tricoli Lan Fu Department of Electronic Materials Engineering Australian Research Council Centre of Excellence for Transformative Meta-Optical SystemsResearch School of PhysicsThe Australian National UniversityCanberraACT 2600Australia Nanotechnology Research Laboratory Research School of ChemistryCollege of ScienceThe Australian National UniversityCanberraACT 2600Australia Nanotechnology Research Laboratory Faculty of EngineeringThe University of SydneyCamperdownNSW 2006Australia

Air quality is deteriorating due to continuing urbanization and *** particular,nitrogen dioxide(NO_(2))is a biologically and environmentally hazardous byproduct from fuel combustion that is ubiquitous in urban *** address this issue,we report a high-performance flexible indium phosphide nanomembrane NO_(2)sensor for real-time air quality *** ultralow limit of detection of~200 ppt and a fast response have been achieved with this device by optimizing the film thickness and doping concentration during indium phosphide *** varying the film thickness,a dynamic range of values for NO_(2)detection from parts per trillion(ppt)to parts per million(ppm)level have also been demonstrated under low bias voltage and at room temperature without additional light *** measurements show an adequately stable response after repeated ***-site testing of the sensor in a residential kitchen shows that NO_(2)concentration from the gas stove emission could exceed the NO_(2)Time Weighted Average limit,i.e.,200 ppb,highlighting the significance of real-time ***,the indium phosphide nanomembrane sensor element cost is estimated at<0.1 US$due to the miniatured size,nanoscale thickness,and ease of *** these superior performance characteristics,low cost,and real-world applicability,our indium phosphide nanomembrane sensors offer a promising solution for a variety of air quality monitoring applications.

关键词： air quality monitoring flexible III-V semiconductors nanofilm ultrathin

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Mirror-twin induced bicrystalline InAs nanoleaves

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Nano Research 2016年第3期9卷 766-773页

作者： Mun Teng Soo Kun Zheng Qiang Gao hark hoe tan Chennupati Jagadish Jin Zou Materials Engineering The University of Queensland St. Lucia QLD 4072 Australia Centre for Microscopy and Microanalysis The University of Queensland St. Lucia QLD 4072 Australia Australian Institute for Bioengineering and Nanotechnology The University of Queensland St. Lucia QLD 4072 Australia Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT2601 Australia

In this study, leaf-like one-dimensional InAs nanostructures were grown by the metal-organic chemical vapor deposition method. Detailed structural charac- terization suggests that the nanoleaves contain relatively low-energy {122} or {133} mirror twins acting as their midribs and narrow sections connecting the nanoleaves and their underlying bases as petioles. Importantly, the mirror twins lead to identical lateral growth of the twinned structures in terms of crystallography and polarity, which is essential for the formation of lateral symmetrical nanoleaves. It has been found that the formation of nanoleaves is driven by catalyst energy minimization. This study provides a biomimic of leaf found in nature by fabricating a semiconductor nanoleaf.

关键词： InAs nanoleaf twin boundary mirror twin

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Nonpolar Al_(x)Ga_(1−x)N/Al_(y)Ga_(1−y)N multiple quantum wells on GaN nanowire for UV emission

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Nano Research 2022年第8期15卷 7670-7680页

作者： Sonachand Adhikari Olivier Lee Cheong Lem Felipe Kremer Kaushal Vora Frank Brink Mykhaylo Lysevych hark hoe tan Chennupati Jagadish Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberraAustralian Capital Territory 2601Australia Semiconductor Device Fabrication Group CSIR-Central Electronics Engineering Research InstitutePilaniRajasthan 333031India Australian National Fabrication Facility ACT Node Research School of PhysicsThe Australian National UniversityCanberraAustralian Capital Territory 2601Australia Centre for Advanced Microscopy The Australian National UniversityCanberraAustralian Capital Territory 2601Australia Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems Research School of PhysicsThe Australian National UniversityCanberraAustralian Capital Territory 2601Australia

Nonpolar m-plane AlGaN offers the advantage of polarization-free multiple quantum wells(MQWs)for ultraviolet(UV)emission and can be achieved on the sidewalls of selective area grown GaN *** reveal that the growth of AlGaN on GaN nanowires by metal organic chemical vapor deposition(MOCVD)is driven by vapor-phase diffusion,and consequently puts a limit on the pitch of nanowire array due to shadowing *** insight into the difficulty of achieving metal-polar AlGaN nanowire by selective area growth(SAG)in MOCVD is also provided and can be attributed to the strong tendency to form pyramidal structure due to a very small growth rate of{1011}semipolar planes compared to(0001)*** nonpolar m-plane sidewalls of GaN nanowires obtained via SAG provides an excellent platform for growth of nonpolar AlGaN *** emission from mplane Al_(x)Ga_(1−x)N/Al_(y)Ga_(1−y)N MQWs grown on sidewalls of dislocation-free GaN nanowire is demonstrated in the wavelength range of 318–343 nm.

关键词： metal organic chemical vapor deposition(MOCVD) nanowire nonpolar plane AlGaN selective area growth multiple quantum wells

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Electrochemical hydrogenation of mixed-phase TiO2 nanotube arrays enables remarkably enhanced photoelectrochemical water splitting performance

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Science Bulletin 2018年第3期63卷 194-202页

作者： Jiaqin Liu Mengjia Dai Jian Wu Ying Hu Qi Zhang Jiewu Cui Yan Wang hark hoe tan Yucheng Wu Institute of Industry and Equipment Technology Hefei University of Technology Hefei 230009 China School of Materials Science and Engineering Hefei University of Technology Hefei 230009 China Key Laboratory of Advanced Functional Materials and Devices of Anhui Province Hefei 230009 China Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT2601 Australia

We first report that photoelectrochemical （PEC） performance of electrochemically hydrogenated TiO2 nanotube arrays （TNTAs） as high-efficiency photoanodes for solar water splitting could be well tuned by designing and adjusting the phase structure and composition of TNTAs. Among various TNTAs annealed at different temperature ranging from 300 to 700℃, well-crystallized single anatase （A） phase TNTAs-400 photoanode shows the best photoresponse properties and PEC performance due to the favor- able crystallinity, grain size and tubular structures. After electrochemical hydrogenation （EH）. anatase- rutile （A-R） mixed phase EH-TNTAs-600 photoanode exhibits the highest photoactivity and PEC perfor- mance for solar water splitting. Under simulated solar illumination, EH-TNTAs-600 achieves the best photoconversion efficiency of up to 1.52% and maximum H2 generation rate of 40.4 ~mol h i cm-2, our- stripping other EH-TNTAs photoanodes. Systematic studies reveal that the signigicantly enhanced PEC performance for A-R mixed phaes EH-TNTAs-600 photoanode could be attributed to the synergy of A-R mixed phases and intentionally introduced Ti3~ （oxygen vacancies） which enhances the photoactivity over both UV and visible-light regions, and boosts both charge separation and transfer efficiencies. These findings provide new insight and guidelines for the construction of highly efficient TiO2-based devices for the application of solar water splitting.

关键词： TNTAs Electrochemical hydrogenation Phase Photoelectrochemistry Hydrogen generation

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Highly regular rosette-shaped cathodoluminescence in GaN selfassembled nanodisks and nanorods

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Nano Research 2020年第9期13卷 2500-2505页

作者： Bijun Zhao Mark Nicolas Lockrey Naiyin Wang Philippe Caroffu Xiaoming Yuan Li Li JenniferWong-Leung hark hoe tan Chennupati Jagadish Departm ent of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia Australian National Fabrication Facility Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia Hunan Key Laboratory for Supermicrostructure and Ultrafast Process School of Physics and ElectronicsCentral South University932 South Lushan RoadChangsha 410083China ARC Centre of Excellence for Transformative Meta-O ptical Systems Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia

Self-assembled GaN nanorods were grown by metal-organic chemical vapor deposition.A highly regular rosette-shaped cathodoluminescence pattern in the GaN nanorods is observed,where its origin is helpful to deepen the understanding of GaN nanorod *** pattern forms at the very early stages of nanorod growth,which consists of yellow luminescence at the edges and the non-luminous region at six vertices of the *** clarify its origin,we carried out detailed cathodoluminescence studies,electron microscopy studies and nanoscale secondary ion mass spectrometry at both the nanorod surface and *** found the pattern is not related to optical resonance modes or polarity inversion,which are commonly reported in GaN *** chemical composition and strain analysis,we found higher carbon and nitrogen cluster concentration and large compressive strain at the pattern *** pattern formation may relate to facet preferential distribution of non-radiative recombination centers related to excess carbon/*** work provides an insight into strain distribution and defect-related emission in GaN nanorod,which is critical for future optoelectronic applications.

关键词： metalorganic chemical vapor deposition(MOCVD) GaN nanorod cathodoluminescence yellow luminescence non-radiative recombination

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Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires

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Nano Research 2022年第4期15卷 3695-3703页

作者： Zahra Azimi Aswani Gopakumar Amira SAmeruddin Li Li Thien Truong Hieu TNguyen hark hoe tan Chennupati Jagadish Jennifer Wong-Leung Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia Faculty of Applied Science and Technology Universiti Tun Hussein Onn MalaysiaBatu Pahat 86400Malaysia Australian National Fabrication Facility ACT Node Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia School of Engineering The Australian National UniversityCanberra ACT 2601Australia Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia

Catalyst-free InGaAs nanowires grown by selective area epitaxy are promising building blocks for future optoelectronic devices in the infrared spectral *** progress,the role of pattern geometry and growth parameters on the composition,microstructure,and optical properties of InGaAs nanowires is still ***,we present an optimised growth parameter window to achieve highly uniform In1-xGaxAs nanowire arrays on GaAs(111)B substrate over an extensive range of Ga concentrations,from 0.1 to 0.91,by selective-area metal-organic vapor-phase *** observe that the Ga content always increases with decreasing In/(Ga+In)precursor ratio and group V flow rate and increasing growth *** increase in Ga content is supported by a blue shift in the photoluminescence peak *** geometry of the nanowire arrays also plays an important role in the resulting ***,increasing the nanowire pitch size from 0.6 to 2μm in a patterned array shifts the photoluminescence peak emission by up to 120 *** of these growth and geometry parameters,the Ga content determines the crystal structure,resulting in a predominantly wurtzite structure for xGa≤0.3 and a predominantly zinc blende phase for xGa≥*** insights on the factors controlling the composition of InGaAs nanowires grown by a scalable catalyst-free approach provide directions for engineering nanowires as functional components of future optoelectronic devices.

关键词： InGaAs nanowires ternary semiconductors selective-area metal-organic vapor-phase epitaxy nanostructure pattern geometry

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Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy

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Nano Research 2017年第2期10卷 672-682页

作者： Alexander Berg Philippe Caroff Naeem Shahid Mark N. Lockrey Xiaoming Yuan Magnus T. Borgstrom hark hoe tan Chennupati Jagadish Solid State Physics and NanoLund Lund University Box 118 SE-221 00 Lund Sweden Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT2601 Australia Australian National Fabrication Facility Research School of Physics and Engineering The Australian National University Canberra ACT 2601 Australia

Ternary III-V nanowires （NWs） cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP NW arrays using metal-organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross- section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.

关键词： nanowire InGaP selective-area epitaxy cathodoluminescence energy-dispersive X-ray spectroscopy

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Reducing Zn diffusion in single axial junction In P nanowire solar cells for improved performance

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Progress in Natural Science:Materials International 2018年第2期28卷 178-182页

作者： Ziyuan Li Inseok Yang Li Li Qian Gao Jet Shoon Chong Zhe Li Mark N.Lockrey hark hoe tan Chennupati Jagadish Lan Fu Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Australian National Fabrication Facility The Australian National University Department of Applied Mathematics Research School of Physics and Engineering The Australian National University

In this work axial n-i-p junction In P nanowires were grown by selective-area metal organic vapor phase epitaxy(SA-MOVPE) technique with the growth sequence starting from n-segment. The optical properties and carrier lifetimes of the n-, i-and p-type segments were studied and compared using time-resolved photoluminescence(PL) and cathodoluminescence(CL) measurements. We demonstrate for the first time that CL is capable of resolving the electrical profile of the nanowires, namely the varied lengths of the n-, i-and p-segments, providing a simple and effective approach for nanowire growth calibration and optimization. The CL result was further confirmed by electron beam induced current(EBIC) and photocurrent mapping measurements performed from the fabricated single nanowire solar cell devices. It is revealed that despite a non-optimized device structure(very long n-region and short i-region), the n-i-p nanowire solar cells show improved power conversion efficiency(PCE) than the previously reported p-i-n(growth starts with p-segment) single nanowire solar cells due to reduced p-type dopant(Zn) diffusion during the growth of n-i-p solar cell structure.

关键词： InP Nanowire solar cells Axial junction Selective-area MOVPE CL EBIC

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Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy

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Nano Research 2020年第6期13卷 1586-1591页

作者： Seyyedesadaf Pournia Samuel Linser Giriraj Jnawali Howard E.Jackson Leigh M.Smith Amira Ameruddin Philippe Caroff Jennifer Wong-Leung hark hoe tan Chennupati Jagadish Hannah J.Joyce Department of Physics University of CincinnatiCincinnatiOH45221-0011USA Department of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberraACT2601Australia Department of Engineering University of Cambridge9 JJ Thomson AvenueCambridgeCB30FAUK

Nano Research volume We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite *** of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group *** ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth *** the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite *** information is vital to the development of crystal phase engineering of this important III-V semiconductor.

关键词： nanowires Wurtzite InAs photocurrent measurement optical selection rules energy band structure

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Electrically programmable solid-state metasurfaces via flash localised heating

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Light(Science & Applications) 2023年第3期12卷 391-397页

作者： Khosro Zangeneh Kamali Lei Xu Nikita Gagrani hark hoe tan Chennupati Jagadish Andrey Miroshnichenko Dragomir Neshev Mohsen Rahmani ARC Centre of Excellence for Transformative Meta-Optical Systems(TMOS) Research School of PhysicsThe Australian National UniversityCanberraACT 2601Australia Advanced Optics and Photonics Laboratory Department of EngineeringSchool of Science and TechnologyNottingham Trent UniversityNottinghamNG118NSUK School of Engineering and Information Technology University of New South WalesCanberraACT 2600Australia

In the last decades,metasurfaces have attracted much attention because of their extraordinary light-scattering ***,their inherently static geometry is an obstacle to many applications where dynamic tunability in their optical behaviour is ***,there is a quest to enable dynamic tuning of metasurface properties,particularly with fast tuning rate,large modulation by small electrical signals,solid state and programmable across multiple ***,we demonstrate electrically tunable metasurfaces driven by thermo-optic effect and flash-heating in *** show a 9-fold change in transmission by<5 V biasing voltage and the modulation rise-time of<625µ*** device consists of a silicon hole array metasurface encapsulated by transparent conducting oxide as a localised *** allows for video frame rate optical switching over multiple pixels that can be electrically *** of the advantages of the proposed tuning method compared with other methods are the possibility to apply it for modulation in the visible and near-infrared region,large modulation depth,working at transmission regime,exhibiting low optical loss,low input voltage requirement,and operating with higher than video-rate switching *** device is furthermore compatible with modern electronic display technologies and could be ideal for personal electronic devices such as flat displays,virtual reality holography and light detection and ranging,where fast,solid-state and transparent optical switches are required.

关键词： tuning flash state

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