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Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

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Chinese Physics B 2011年第8期20卷 403-407页

作者： Ni Jian Zhang Jian-Jun Cao Yu Wang Xian-Bao Li Chao Chen xin-Liang geng xin-hua Zhao Ying Institute of Photo-electronics Thin Film Devices and Technique of Nankai University Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin Key Laboratory of Photo-electronicInformation Science and Technology of Ministry of Education (Nankai University) Tianjin 300071 China

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.

关键词： amorphous silicon solar cell low temperature open-circuit voltage

P-μc-Si_(1-x)Ge_x:H thin film by VHF-PECVD

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Optoelectronics Letters 2008年第2期4卷 130-132页

作者： SHANG Ze-ren ZHANG Jian-jun ZHANG Li-ping HU Zeng-xin XUE Jun-ming ZHAO Ying geng xin-hua Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin Key Laboratory of OPtoelectronic Information Science and Technology of Education Ministry Institute of Photo-Electronics Thin Film Devices and Technology Nankai University Tianjin 300071 China

In this paper, a series of boron doped microcrystalline hydrogenated silicon-germanium （p-μc-Si1-xGex：H） was deposited by very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） from SiH4 and GeF4 mixtures. The effect of GeF4 concentration on films＇ composition, structure and electrical properties was studied. The results show that with the increase of GeF4 concentration, the Ge fraction x increases. The dark conductivity and crystalline volume fraction increase first, and then decrease. When the GC is 4%, p-μc-Si1-xGex：H material with high conductivity, low activation energy （σ= 1.68 S/cm, E8=0.047 eV）, high crystalline volume fraction （60%） and with an average transmission coefficient over the long wave region reaching 0.9 at the thickness of 72 nm was achieved. The experimental results were discussed in detail.

关键词： VHF-PECVD 薄膜化学纤维光半导体

Preparation of Indium Tin Oxide films deposited by reactive evaporation at different substrate-temperature and the properties

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Optoelectronics Letters 2007年第6期3卷 438-440页

作者： LI Lin-na XUE Jun-ming ZHAO Ying LI Yang-xian geng xin-hua Institute of Optoelectronic Thin Film Devices and Technique of Nankai University Key Laboratory of OptoelectronicThin Film Devices and Technique of Tianfin Key Laboratory of Optoelectronic Information Science and Technology ofChinese Ministry of Education Tianjin 300071 China School of Material Science ＆ Engineering Hebei University of Technology Tianjin 300130 China

The Indium Tin Oxide films have been prepared at different substrate-temperamre on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.3 × 10^-1Pa and a deposition rate of 10.2 nrrds. The best ITO films obtained have an electrical resistivity of 4.35 × 10^4 Ω.cm, a carrier concentration of 4,02 × 10^2o cm^-3 and a Hall mobility of 67.5 cm2wlsI. The influence of the substrate-temperamre on the structural, optical and electrical properties of the obtained films has been investigated.

关键词：薄膜生长基片电抗蒸发温度

Study on Oxidation of Pyrite by In Situ Absorption Spectroscopy

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光谱学与光谱分析 2010年第12期30卷 3375-3378页

作者： ZHAO Zhen-hua ZHANG Ping CHEN Yong-heng YAO Yan WU Ying-juan geng xin-hua DENG Xiang-zhou School of Chemistry and Chemical Engineering Guangzhou University Guangzhou 510006 China

Pyrite is one of the common natural *** is easily oxidized and brings heavy metal contaminations,therefore it is the main source of acidity mine *** study on the dynamics of pyriteis helpful to comprehending the mechanism of its *** the present paper,an experi mental method was designed that phenanthroline reacts with Fe2+ that is released from pyrite in solution,and produces stable orange-red complex *** can be detected by absorption ***-situ characterization of oxidation of pyrite can be achieved by this *** results showed that the method is reliable and accurate,and it has high sensitivity and little interference;the reaction rate of oxidation increasedl inearly with time,corresponding to the characterization of zero-order reaction;oxidation of pyrite belongs to the surface reaction and the process of surface reactionis rate determining step.

关键词：黄铁矿氧化反应检测方法灵敏度

温度对高速微晶硅薄膜沉积速率及其特性的影响

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光电子．激光 2007年第6期18卷 659-662页

作者：郭群超孙建魏长春耿新华南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室天津300071

采用超高频(VHF)结合高压(HP)的技术路线,在较高SiH4浓度(SC)下实现了微晶硅(μc-Si:H)薄膜的高速沉积,考察了衬底温度在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性的影响。结果表明:薄膜微结构特性随衬底温度变化是导致薄... 详细信息

采用超高频(VHF)结合高压(HP)的技术路线,在较高SiH4浓度(SC)下实现了微晶硅(μc-Si:H)薄膜的高速沉积,考察了衬底温度在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性的影响。结果表明:薄膜微结构特性随衬底温度变化是导致薄膜电学特性随衬底温度变化的根本原因;HP与低压条件下沉积的μc-Si:H薄膜的特性随温度变化的规律不同,在试验温度范围内,HP高速沉积的μc-Si:H薄膜生长速率不同于低压时随温度升高而下降的趋势,而是先增大后趋于平稳,晶化率随温度升高也不是单调增加,而是先增加后减小。

关键词：高速沉积微晶硅(μc-Si:H) 超高频(VHF) 温度

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氯化钠—丙醇体系溶剂浮选铋Ⅲ

冶金分析 2000年第6期20卷 10-12页

作者：李全民雷军耿新华刘奇河南新乡453002 大庆石油管理局供水公司研究所河南师范大学化学与环境科学学院!河南省高校环境科学重点实验室

研究了氯化钠—丙醇体系溶剂浮选铋的行为及丙醇水溶液的分相条件。实验表明 ,当溶液pH =5～ 7时 ,Bi 水解生成碱式盐〔Bi(OH) 2 Cl〕沉淀可以溶剂浮选于丙醇与水两相界面之间。此时 ,Bi 可与Cd ,Mn ,Mo ,Fe ,Ni ,Zn 等得到满意的分离

关键词：铋丙醇溶剂浮选氯化钠

Stability of thin films of microcrystalline silicon under ligh tsoaking

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Optoelectronics Letters 2006年第1期2卷 15-17页

作者： HAN Xiao-yan Wang Yan XUE Jun-ming ZHAO Shu-wen REN Hui-zhi ZHAO Ying LI Yang-xian geng xin-hua School of Material Science ＆ Engineering Hebei University of Technology Tianjin 300130 China Institute of Photo-electronic Thin Film Devices and Technique of Nankai University Tianjin 300071 China

Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD *** effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied by means of Raman measurements,photoconductivity(σ_ ph ),and dark conductivity(σ_d),followed by the measurements of light absorption coefficient(α),the product of quantum efficiency,mobility and lifetime (ημτ),before,during and after light soaking,*** results indicate that the microcrystalline silicon near the transition region is suitable to prepare microcrystalline silicon of device grade,and that the amorphous region of the material is responsible to the light induced degradation.

关键词：薄膜微晶硅稳定性微观结构

源自海相碳酸盐岩烃源岩原油裂解成气的动力学研究

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天然气地球科学 2008年第5期19卷 695-700页

作者：耿新华耿安松广州大学化学化工学院广东广州510006 中国科学院广州地球化学研究所有机地球化学国家重点实验室广东广州510640

对源自海相碳酸盐岩的原油进行了动力学模拟实验,阐述了该原油再次热解过程中气态烃组分的演化特征和生成动力学参数。运用动力学参数将模拟实验结果外推到地质条件下,结果表明:在150℃时,海相碳酸盐岩烃源岩生成的原油将开始热裂解并... 详细信息

对源自海相碳酸盐岩的原油进行了动力学模拟实验,阐述了该原油再次热解过程中气态烃组分的演化特征和生成动力学参数。运用动力学参数将模拟实验结果外推到地质条件下,结果表明:在150℃时,海相碳酸盐岩烃源岩生成的原油将开始热裂解并生成大量天然气,温度达到220℃时,裂解生气基本结束,天然气就全部取代石油;甲烷的生成Easy%RO主要介于1.2%～2.9%之间,C2-5烃类气体的生成Easy%RO主要介于1.5%～2.5%之间。这一研究结果可为我国的碳酸盐岩烃源岩再次热解产气的定量模拟提供重要依据,有助于海相碳酸盐岩油气的资源评估。

关键词：海相碳酸盐岩气态烃裂解实验生烃动力学

B掺杂对平面结构MOCVD-ZnO薄膜性能的影响(英文)

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人工晶体学报 2008年第4期37卷 997-1002页

作者：陈新亮薛俊明张德坤孙建赵颖耿新华南开大学光电子薄膜器件与技术研究所南开大学光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室(南开大学天津大学)天津300071

本文研究了B2H6掺杂流量（B掺杂）对平面结构MOCVD—ZnO薄膜的微观结构和光电性能影响。XRD、SEM和AFM测试的研究结果表明，玻璃衬底上制备的ZnO薄膜具有（002）峰择优取向的平面结构，B掺杂使薄膜的球状晶粒尺寸变小，10sccm流量时晶... 详细信息

本文研究了B2H6掺杂流量（B掺杂）对平面结构MOCVD—ZnO薄膜的微观结构和光电性能影响。XRD、SEM和AFM测试的研究结果表明，玻璃衬底上制备的ZnO薄膜具有（002）峰择优取向的平面结构，B掺杂使薄膜的球状晶粒尺寸变小，10sccm流量时晶粒尺寸为-15nm。ZnO：B薄膜的最小电阻率为5．7× 10^-3 Ω · cm。生长的ZnO薄膜（厚度d=1150nm）在400-900nm范围的透过率为82％-97％，且随着BzH6掺杂流量增大，光学吸收边呈现蓝移（即光学带隙t展宽）现象。

关键词： MOCVD ZnO薄膜 B掺杂太阳电池