P-μc-Si_(1-x)Ge_x:H thin film by VHF-PECVD

作     者：SHANG Ze-ren ZHANG Jian-jun ZHANG Li-ping HU Zeng-xin XUE Jun-ming ZHAO Ying GENG Xin-hua 

作者机构：Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin Key Laboratory of OPtoelectronic Information Science and Technology of Education Ministry Institute of Photo-Electronics Thin Film Devices and Technology Nankai University Tianjin 300071 China 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2008年第4卷第2期

页      面：130-132页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：National Basic Research Program of China ("973" Project, No.2006CB202602, 2006CB202603) the National Natural Science Foundation of China (No. 60437030) the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry 

主　　题：VHF-PECVD 薄膜 化学纤维 光半导体 

摘      要：In this paper, a series of boron doped microcrystalline hydrogenated silicon-germanium (p-μc-Si1-xGex:H) was deposited by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) from SiH4 and GeF4 mixtures. The effect of GeF4 concentration on films composition, structure and electrical properties was studied. The results show that with the increase of GeF4 concentration, the Ge fraction x increases. The dark conductivity and crystalline volume fraction increase first, and then decrease. When the GC is 4%, p-μc-Si1-xGex:H material with high conductivity, low activation energy (σ = 1.68 S/cm, Eg = 0.047 eV), high crystalline volume fraction (60%) and with an average transmission coefficient over the long wave region reaching 0.9 at the thickness of 72 nm was achieved. The experimental results were discussed in detail.