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Spa.e Environment Simula.or for Testing of Ma.eria.s a.d Devices

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Journa. of Modern Physics 2013年第2期4卷 180-184页

作者： Hra.t N. Yeritsya. Va.ha.a. V. Ha.utunya. a.a. a. Sa.a.ya. Sergej K. Nikoghosya. a.a.i S. Hovha.nisya. Nora.r E. Grigorya. Ka.en Sh. Oha.ya. eleonora a. hakhverdyan Na.ek a. Ha.opya. Va.a. a. Sa.a.ya. a.I. a.ikha.ya. Na.iona. Science La.ora.ory Yerevan Physics Institute Yerevan Armenia Institute of Metrology of a.menia. Republic Yerevan Armenia

Equipment ha. been designed a.d crea.ed for experimenta. simula.ion of spa.e environment conditions of Geosta.iona.y orbit of the Ea.th. The following conditions a.e supported in the va.uum cha.ber ha.ing volume of 1.2 cubic meters: Va.uum 10-5 Torr. (1.3 × 10-3 Pa., electron bea. with energy up to 8 MeV, tempera.ures from -150°C to +150°C a.d sola. ultra.iolet ra.ia.ion. The peculia.ity of this equipment is the possibility of a.a.yzing complex simulta.eous influence of mentioned a.ove 4 fa.tors on the sa.ple a.d in-situ direct mea.urement of sa.ple pa.a.eters under irra.ia.ion which provides a.most rea. conditions. Silicon single crysta.s used in spa.e environment were tested in the va.uum cha.ber a.d new results were received ha.ing scientific a.d a.plied interest. It wa. shown, pa.ticula.ly, tha. the electro-conductivity of silicon sa.ples ha. higher va.ue a. in-situ condition tha. ex-situ a.ter irra.ia.ion.

关键词： Spa.e Silicon Ra.ia.ion Defects (RD) Conductivity Ca.rier Concentra.ion

The Intera.tion of Impurity Oxygen with Ra.ia.ion Defects in Silicon Crysta.

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Journa. of Modern Physics 2015年第14期6卷 2050-2057页

作者： Hra.t N. Yeritsya. a.a. a. Sa.a.ya. Nora.r E. Grigorya. eleonora a. hakhverdyan Va.ha.a. V. Ha.utyunya. a.a.i S. Hovha.nisya. Va.a. a. Sa.a.ya. a.menuhi a. Kha.ha.rya. Ba.ra. a. Grigorya. La.ra.S. Ha.obya. Ga.a.e a. a.a.uni a.hot S. Va.da.ya. Va.ili M. Tsa.a.ov a.I. a.ikha.ya. Na.iona. Science La.ora.ory (Yereva. Physics Institute) Yerevan Armenia Na.iona. Institute of Metrology Yerevan Armenia Ca.DLE Synchrotron Resea.ch Institute Yerevan Armenia

Present pa.er describes the investiga.ion of va.a.cy (V) a.d interstitia. (I) a.nihila.ion on oxygen a.oms by mea.s of infra.ed (IR) a.sorption a.d Ha.l-effect mea.urements of the a.cumula.ion of va.a.cy-oxygen complexes (VO) in Si crysta.s a. high energy electron irra.ia.ion. Silicon sa.ples, conta.ning a.ong with isola.ed oxygen a.oms, more complica.ed oxygen qua.i-molecules of SiOn (n = 1, 2, 3…) type, were used. a. isochrona. a.d isotherma. a.nea.ing in the tempera.ure ra.ge of 300°C - 350°C, a.a.t from the rea.tion of va.a.cy ca.turing by oxygen a.oms with forma.ion of a.centers, more complica.ed rea.tions with pa.ticipa.ion of va.a.cies a.d oxygen a.oms were observed: a.centers, oxygen conta.ning qua.i-molecules. a.model is suggested to describe the observed processes tha. a.e qua.ita.ively different from those ta.ing pla.e in sa.ples conta.ning completely dissocia.ed oxygen.

关键词： Impurity Oxygen Silicon Crysta. Electron Irra.ia.ion Infra.ed (IR) a.sorption Spectra a.nea.ing Va.a.cy Interstitia. a.om

In-Situ Study of Silicon Single Crysta.s Conductivity under Electron Irra.ia.ion

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Journa. of Modern Physics 2012年第5期3卷 383-387页

作者： Hra.t N. Yeritsya. a.a. a. Sa.a.ya. Sergey K. Nikoghosya. Va.ha.a. V. Ha.utyunya. Ka.en Sh. Oha.ya. Nora.r E. Grigorya. eleonora a. hakhverdyan a.ha.i S. Hovha.nisya. Va.a. a. Sa.a.ya. Ka.o a. Movsisya. a.tur V. Hovha.nisya. a.I. a.ikha.ya. Na.iona. Science La.ora.ory (YerPhI) Institute of Metrology Republic of a.menia Sta.e Nuclea. Sa.ety Regula.ory Committee by the Government of a.menia

The influence of electron ra.ia.ion on the properties of semiconducting silicon single crysta.s (Si)—both n- a.d p-types (currently one of the most widely a.plied ma.eria. in the electronic technology) wa. studied under the electron irra.ia.ion process in-situ in a.r (in common conditions). Higher va.ue of electro-conductivity (σ) during the irra.ia.ion process with respect to a.ter irra.ia.ion wa. observed, which wa. expla.ned by ioniza.ion a.d ca.ture mecha.isms resulting in the forma.ion of non-equilibrium ca.riers (hole-electron pa.rs). The kinetics of ra.ia.ion defects genera.ion, their physica. na.ure, tempera.ure sta.ility a.d rela.a.ion a.e exa.ined. Structura. ra.ia.ion defects forma.ion: point a.d complexes, their influence on the silicon conductivity a.e considered.

关键词： Silicon Ra.ia.ion Defects (RD) Ca.rier Concentra.ion Ca.rier Mobility Conductivity

Long-Time Rela.a.ion a.d Residua. Conductivity in Ga. Irra.ia.ed by High-Energy Electrons

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Journa. of Modern Physics 2014年第1期5卷 51-54页

作者： Hra.t Yeritsya. Norik Grigorya. Va.ha.a. Ha.utyunya. eleonora hakhverdyan Va.eriy Ba.hda.a.ya. a. a.ikha.ia. Na.iona. Science La.ora.ory Yerevan Physics Institute Yerevan Armenia

This pa.er presents the results of a.study of long-time rela.a.ion (LR) a.d residua. conductivity in n-type ga.lium phosphide (Ga.) crysta.s irra.ia.ed by 50 MeV electrons. a.ma.ifold increa.e in photosensitivity a.d quenching of residua. conductivity wa. found a. a.result of irra.ia.ion. It is shown tha. LR in Ga. is due to disordered regions (genera.ed by electron irra.ia.ion) which ha.e conductivity close to self one. The Fermi level in the disordered regions is determined by which is loca.ed deep in the forbidden ba.d (Ее - 1.0 eV). LR effect is ma.nly expla.ned by a.spa.ia. sepa.a.ion of electrons a.d holes, recombina.ion of which is prevented by potentia. ba.riers. The observed increa.e in conductivity is a.socia.ed with the increa.e in the concentra.ion of minority ca.riers a. well a. with increa.e of the Ha.l mobility a. the sa.ple illumina.ion.

关键词： Long-Time Rela.a.ion (LR) Residua. Conductivity (RC) Photoconductivity Irra.ia.ion Ga.lium Phosphide