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High-performance GaSb planar PN junction detector

Journal of Semiconductors 2024年第9期45卷 48-52页

作者： Yuanzhi Cui Hongyue Hao Shihao Zhang Shuo Wang Jing Zhang Yifan Shan Ruoyu Xie Xiaoyu Wang Chuang Wang Mengchen Liu Dongwei Jiang Yingqiang Xu Guowei Wang Donghai Wu Zhichuan Niu derang cao College of Physics National Demonstration Center for Experimental Applied Physics EducationQingdao UniversityQingdao 266071China Key Laboratory of Optoelectronic Materials and Devices Chinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China

This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.

关键词： antimonide short-wave infrared planar junction zinc diffusion

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Mapping the antiparallel aligned domain rotation by microwave excitation

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CHINESE PHYSICS B 2024年第9期33卷 599-605页

作者： Zhang, Jing Cui, Yuanzhi Wang, Xiaoyu Wang, Chuang Liu, Mengchen Xu, Jie Li, Kai Zhao, Yunhe Lu, Zhenyan Pan, Lining Jin, Chendong Liu, Qingfang Wang, Jianbo cao, derang Qingdao Univ Qingdao 266071 Peoples R China Qingdao Univ Natl Demonstrat Ctr Expt Appl Phys Educ Qingdao 266071 Peoples R China Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China Lanzhou Univ Key Lab Special Funct Mat & Struct Design Minist Educ Lanzhou 730000 Peoples R China Northeast Forestry Univ Coll Chem Chem Engn & Resource Utilizat Harbin 150040 Peoples R China Hunan Univ Sci & Technol Sch Phys & Elect Hunan Prov Key Lab Intelligent Sensors & Adv Senso Xiangtan 411201 Peoples R China Chinese Acad Sci Ningbo Inst Mat Technol & Engn Guiyang 315201 Peoples R China Hebei Univ Hebei 071002 Peoples R China Lanzhou Univ Key Lab Magnetism & Magnet Mat Minist Educ Lanzhou 730000 Peoples R China

The evolution process of magnetic domains in response to external fields is crucial for the modern understanding and application of spintronics. In this study, we investigated the domain rotation in stripe domain films of varying thicknesses by examining their response to microwave excitation in four different orientations. The resonance spectra indicate that the rotation field of stripe domain film under an applied magnetic field approaches the field where the resonance mode of sample changes. The saturation field of the stripe domain film corresponds to the field where the resonance mode disappears when measured in the stripe direction parallel to the microwave magnetic field. The results are reproducible and consistent with micromagnetic simulations, providing additional approaches and techniques for comprehending the microscopic mechanisms of magnetic domains and characterizing their rotation.

关键词： stripe domain magnetic film microwave excitation micromagnetic simulation 75.78.-n 75.78.Fg 76.50.+g 75.70.Kw

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Improvement of high-frequency properties of Co2FeSi Heusler films by ultrathin Ru underlayer

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Chinese Physics B 2020年第4期29卷 379-384页

作者： Cuiling Wang Shouheng Zhang Shandong Li Honglei Du Guoxia Zhao derang cao College of Physics Center for Marine Observation and CommunicationQingdao UniversityQingdao 266071China College of Electronic and Information Engineering Shandong University of Science and TechnologyQingdao 266510China School of Physics Shandong UniversityJinan 250100China

Heusler Co2FeSi films with a uniaxial magnetic anisotropy and high ferromagnetic resonance frequency fr were deposited by an oblique sputtering technique on Ru underlayers with various thicknesses tRufrom 0 nm to 5 *** is revealed that the Ru underlayers reduce the grain size of Co2FeSi,dramatically enhance the magnetic anisotropy field HK induced by the internal stress from 242 Oe(1 Oe=79.5775 A·m^-1)to 582 Oe with an increment ratio of 2.4,while a low damping coefficient *** result of damping implies that the continuous interface between Ru and Co2FeSi induces a large in-plane anisotropic field without introducing additional external *** a result,excellent high-frequency soft magnetic properties with fr up to 6.69 GHz are achieved.

关键词： oblique sputtering ferromagnetic resonance Ru underlayer Heusler thin film

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