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Analysis on Additional Crosstalk Caused by Oblique Incident Ray on PIN Detector Array

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Semiconductor Photonics and Technology 2000年第1期6卷 29-33页

作者： CAO Jun-kai (chongqing Optoelectronics Research Institute, chongqing 400060,CHN) 重庆市光电技术所重庆 400060

The crosstalk caused by oblique incident ray on a PIN detector array is analyzed. An integral expression of crosstalk factor in relation to incident angle and structure parameters is deduced and the correctness of the... 详细信息

关键词： Si-photodiode Detector arrays Crosstalk

Passive Matrix Organic Electroluminescent Display for 3G Cellular Phone

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Semiconductor Photonics and Technology 2001年第4期7卷 247-252页

作者： LI Xiang dong, YANG Jia de (chongqing Optoelectronics Research Institute, chongqing 400060, CHN) 重庆光电技术所重庆 400060

The major features of the display technologies for 3G cellular phone are reviewed. The comparison between their potential candidates for 3G cellular phone is given, and a detailed discussion is made on passive matrix organic electroluminescent display technology. A novel method to improve display contrast ratio is presented. Finally several 3G phone set prototypes with OLED display panels are given as well as the market forecast.

关键词： 3G cellular phone Organic electroluminescent display Passive matrix drive Active matrix drive Duty ratio

Integrated Information Platform over PSTN:ZXF118

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ZTE Communications 2003年第1期1卷 38-40页

作者： Zeng Lin Wang Mingfu (chongqing Institute,Network Division of ZTE Corporation,chongqing 400060,China)

It is generally known that there are millionsof fixed telephone subscribers worldwide,and fixed network carriers have invested alot in network infrastructure construction,yet up till now, very little has been done to en-able value-added services over it. When thenumber of mobile subscribers exceeds that offixed subscribers, deployment of value-addedservices should be a necessity. SMS, based onfixed networks, will no doubt help increase the

关键词： PSTN on or ZTE over CTSI

An RF Low-noise Broadband Amplifier Processed In 0.35μm SiGe Technology

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An RF Low-noise Broadband Amplifier Processed In 0.35μm SiG...

2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Luncai Liu,Zhengfan Zhang National Labs of Analog IC,14 Huayuan Rd,Nanping,chongqing 400060,China SISC,14 Huayuan Rd,Nanping,chongqing 400060,China

The RF low-noise broadband amplifier in 0.35um SiGe technology,which has been successfully processed,was descriped in this *** amplifier has the advantages such as the wide bandwidth(≥3.2GHz),the low noise figure(NF≤2.0dB),the high power gain(S≥27dB), its output power at 1dB gain compression is greater than 9dBm,and OIP is greater than or equal to *** design fundament and the technology features of the broadband amplifier was *** computer simulated results and the measured parameters of pratical products were given,indicating that process technology conforms well to design technology.

关键词： low-noise broadband amplifier SiGe planar IC technology hetero-junction bipolar transister

Investigation into the 12-bit DA converter

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Investigation into the 12-bit DA converter

2007 7th International Conference on ASIC Electronic Version(ASICON 2007)

作者： Weidong Yang Ruzhang Li Yong Liu Yonghui Yang and Kaicheng Li 1 National Labs of Analog Integrated Circuits chongqing 400060 China 2 SISC CETC chongqing 400060 China

In this paper,the circuit implementation principle,circuit design characteristic and process technology characteristic for a 12-bit voltage output D/A converter with internal reference were *** using analog unit circuits such as the R-2R resistance switch network optimized in design,the temperature compensation Zener reference voltage,and the BiCMOS output operational amplifier with JFET input,combined with SISC’ p-well 3um LC2MOS process technology,a 12-bit D/A converter was *** converter features high conversion resolution,small linear and differential error,low power consumption,fast conversion speed,ease of use,etc.

关键词： D/A converter Zener reference voltage output operational amplifier LC2MOS process technology

Studies on design of micro power consumption E/D NMOS reference source

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Studies on design of micro power consumption E/D NMOS refere...

2007 7th International Conference on ASIC Electronic Version(ASICON 2007)

作者： Yonggui Hu Gangyi Hu Dongmei Zhu Yun Xu and Jingfeng Yu 1 National Labs of Analog Integrated Circuits chongqing 400060 China 2 SISC CETC chongqing 400060 China

In this study,a novel micro power dissipation E/D NMOS reference source circuit was *** circuit is simple in structure,but is *** with a traditional BiCMOS band-gap reference source,the micro power dissipation E/D NMOS reference source has a small static current,and eliminates the need of parasitic bipolar transistor and *** you need to do is to add a depletion-mode N-MONFET process to a conventional P-well process *** E/D NMOS reference source circuit has been developed in 2 μm silicon-gate self-aligned CMOS process *** the range-55 to 125 ℃,the static current measured was less than 2μA,the voltage regulation measured was less than 2mV,and the temperature coefficient measured was less than 100ppm/℃.

关键词： micro power dissipation E/D NMOS reference depletion-mode N-MOS transistor

A 1.3GHz Wideband Successive Detection Logarithmic Amplifier

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A 1.3GHz Wideband Successive Detection Logarithmic Amplifier

2007 7th International Conference on ASIC Electronic Version(ASICON 2007)

作者： Jun Wang Kaicheng Li National Labs of Analog Integrated Circuit chongqing 400060 P.R.China Sichuan Institute of Solid-State Circuits CETC chongqing 400060 P.R.China

The basic principle design methodology,circuit structure and simulated results of a successive detection logarithmic amplifier（SDLA） which was developed in dielectric isolation Complementary Bipolar Process（CBIP） is presented in this *** of all,the principle of SDLA base on the transfer function of logarithmic amplifier is ***,the design of circuit structure is optimized based on conclusion drawn by formula ***,on the basis of mathematical analysis and with mathematical software MATLAB,the simulated results are analyzed,and the performance parameters of the circuits are evaluated *** the AC coupling and the typical structure which cascades amplitude-limiting amplifiers,we develop an SDLA whose bandwidth is much wider than 1.3GHz and whose logarithmic accuracy is less than ±*** logarithmic amplifier can be widely used in electronic equipment such as telecommunication,radar,electronic countermeasure.

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Experimental Study of A Novel Piezoelectric Tumor Marker Micro-array Immunosensor

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稀有金属材料与工程 2006年第S3期 405-408页

作者： Bo Zhang~1 Weiling Fu~1 Xue Zhang~1 Qinghai Chen~1 Shijun Xu~2 Daihua Tang~3 (1.Department of Laboratory,Southwest Hospital,Third Military Medical University,chongqing 400038,China) (2.Department of Bioengineering,China Jialing Group,chongqing 400032,China) (3.The 26th Research Institute of Electronics,Ministry of Information Industry,chongqing 400060,China)

A novel 2×5 model of insert-plug piezoelectric quartz crystal tumor marker micro-array immunosensor constructed with screw clamp apparatus has been developed for quantitative detection of the tumor markers such as alpha-fetoprotein (AFP),carcino-embryonic antigen (CEA),prostate specific antigen (PSA),and human chorionic gonadotropin (hCG) in serum,in which every crystal unit can oscillate independently with the stability of±1 hertz (Hz) in air and±2 Hz in *** response characteristics of Pz tumor marker micro-array immunosensor such as temperature, time-cost,reproducibility and specificity etc were also *** detection ranges for AFP,CEA,PSA,and hCG obtained by Pz micro-array immunosensor were 20 ng/ml～640 ng/ml,1.56 ng/ml～50 ng/ml,1.25 ng/ml～50 ng/ml,and 2.5 mIU/ml～250 mlU/mi respectively with the coefficient of variance (CV) less than 5%.No cross-reactivates with other tumor markers in serum were *** results of AFP,CEA,PSA,and hCG obtained by this method from 68 serum samples were in good agreement with those given by chemiluminescence immunoassay with the correlation coefficients of 0.92,0.90,0.91,and 0.94 *** Pz immunosensor regenerated by urea solution could be reused for five times without appreciable loss of response ***,the proposed insert-plug immunosensor provides a rapid, sensitive,specific,reusable,convenient and reliable alternative for the detection of tumor markers in clinical laboratory.

关键词： piezoelectric immunosensor micro-array tumor maker

Guest Editorial:Special Section on Battery Energy Storage Systems for Net-zero Power Systems and Markets

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Journal of Modern Power Systems and Clean Energy 2024年第2期12卷 321-322页

作者： Pierluigi Mancarella Nikos Hatziargyriou chongqing Kang The University of Melbourne MelbourneAustralia The University of Manchester ManchesterUK National Technical University of Athens(NTUA) AthensGreece Tsinghua University BeijingChina IEEE

Battery energy storage technologies have witnessed both dramatic cost reduction and technical evolution in recent *** is leading to widespread deployment of battery energy storage systems(BESSs)worldwide,particularly to support operation of power grids with already deep penetration of *** the development of new battery technologies with different power-to-energy ratios and for various engineering applications,BESSs could play a strategic role towards a net-zero energy *** opportunities are emerging for BESSs to participate in several markets,provide different grid services,and perform“value stacking”,eventually allowing development of new business cases and improved BESS *** configurations that are“behind the meter”,“in front of the meter”,hybrid plants co-located with renewables,and so forth,are only some of the exciting propositions that are being seen in different countries and at different scales,from highly distributed(virtual power plants),to neighbourhood-level(community batteries),to utility scale.

关键词： Battery battery eventually