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Optimizing the thickness of Ta_(2)O_(5) interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO_(2) switching layer for multilevel data storage

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Journal of Materials Science & Technology 2022年第11期106卷 98-107页

作者： Muhammad Ismail Haider Abbas Chandreswar Mahata changhwan choi Sungjun Kim Division of Electronics and Electrical Engineering Dongguk UniversitySeoul 04620Republic of Korea Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea

The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory *** this study,Ta_(2)O_(5) thin film with different thick-nesses(2,4,and 6 nm)was exploited as an appropriate interfacial barrier layer for limiting the formation of the interfacial layer between the 10 nm thick sputtering deposited resistive switching(RS)layer and Ta ohmic electrode to improve the switching cycle endurance and *** show that lower form-ing voltage,narrow distribution of SET-voltages,good dc switching cycles(10^(3)),high pulse endurance(10^(6) cycles),long retention time(10^(4) s at room temperature and 100℃),and reliable multilevel resis-tance states were obtained at an appropriate thickness of∼2 nm Ta_(2)O_(5) interfacial barrier layer instead of without Ta_(2)O_(5) and with∼4 nm,and∼6 nm Ta_(2)O_(5) barrier layer,ZrO_(2)-based memristive ***,multilevel resistance states have been scientifically investigated via modulating the compliance current(CC)and RESET-stop voltages,which displays that all of the resistance states were distinct and stayed stable without any considerable deprivation over 10^(4) s retention time and 104 pulse endurance *** I-V characteristics of RESET-stop voltage(from−1.7 to−2.3 V)of HRS are found to be a good linear fit with the Schottky *** can be seen that Schottky barrier height rises by increasing the stop-voltage during RESET-operation,resulting in enhancing the data storage memory window(on/offratio).Moreover,RESET-voltage and CC control of HRS and LRS revealed the physical origin of the RS mecha-nism,which entails the formation and rupture of conducting *** is thoroughly investigated that proper optimization of the barrier layer at the ohmic interface and the switching layer is essential in memristive *** results demonstrate that the ZrO_(2)-based memristive device with an optimized∼2 nm Ta_(2)O_(5) barrier

关键词： Resistive switching Ta_(2)O_(5)/ZrO_(2)bilayer film Barrier layer thickness Multilevel resistance states RESET-stop voltage

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Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

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Nano Research 2022年第3期15卷 2263-2277页

作者： Asif Ali Haider Abbas Muhammad Hussain Syed Hassan Abbas Jaffery Sajjad Hussain changhwan choi Jongwan Jung HMC(Hybrid Materials Center)and Department of Nanotechnology and Advanced Materials Engineering Sejong UniversitySeoul 143–747Republic of Korea Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea

Investigating the promising chalcogenide materials for the development of memory and advanced neuromorphic computing applications is a critical step in realizing electronic memory and synaptic devices that can efficiently emulate biological synaptic ***,the assessment of monochalcogenide materials for the fabrication of highly scalable memory and electronic synaptic devices that can accurately mimic synaptic functions remain *** the present study,we investigated the thickness-dependent resistive switching(RS)behavior of conductive bridge random access memory(CBRAM)based on a monochalcogenide GeSe switching medium for its possible application in high-performance memory and electronic *** thin films of different thicknesses(6,13,24,35,47,and 56 nm)were deposited via sputtering to fabricate CBRAM devices with a stacking sequence of Ag/GeSe/Pt/Ti/SiO_(2).The devices exhibited compliance current(CC)-free and electroforming-free RS with highly stable endurance and retention characteristics with no major *** devices with a thickness of 6 nm had a low-resistance state(LRS),which required an initial reset to ensure reliable switching *** devices with a thickness of 47 nm and above exhibited the co-existence of unipolar resistive switching(U-RS)and bipolar resistive switching(B-RS)with the CC-controlled transition between the two switching *** resistance states in the 24-nm device between a high-resistance state(HRS)and an LRS were achieved by controlling the set-CC(from 5 mA to CC-free)and the reset stop voltage(from–0.5 to–1.0 V)during the set and reset processes,*** analog RS behavior of the device was further investigated with appropriate pulse measurements to emulate vital synaptic functions,including long-term potentiation(LTP),long-term depression(LTD),spike-rate-dependent plasticity(SRDP),spike-timing-dependent plasticity(STDP),paired-pulse facilitation(PPF),paired-pulse depression(PPD)and

关键词： conductive bridge random access memory(CBRAM) resistive memory switching monochalcogenide material bipolar and unipolar resistive switching multilevel resistive switching electronic synapses

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Towards engineering in memristors for emerging memory and neuromorphic computing: A review

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Journal of Semiconductors 2021年第1期42卷 33-61页

作者： Andrey S.Sokolov Haider Abbas Yawar Abbas changhwan choi Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea Department of Physics Khalifa UniversityAbu Dhabi 127788United Arab Emirates

Resistive random-access memory(RRAM),also known as memristors,having a very simple device structure with two terminals,fulfill almost all of the fundamental requirements of volatile memory,nonvolatile memory,and neuromorphic *** memory and neuromorphic behaviors are currently being explored in relation to a range of materials,such as biological materials,perovskites,2D materials,and transition metal *** this review,we discuss the different electrical behaviors exhibited by RRAM devices based on these materials by briefly explaining their corresponding switching *** then discuss emergent memory technologies using memristors,together with its potential neuromorphic applications,by elucidating the different material engineering techniques used during device fabrication to improve the memory and neuromorphic performance of devices,in areas such as ION/IOFF ratio,endurance,spike time-dependent plasticity(STDP),and paired-pulse facilitation(PPF),among *** emulation of essential biological synaptic functions realized in various switching materials,including inorganic metal oxides and new organic materials,as well as diverse device structures such as single-layer and multilayer hetero-structured devices,and crossbar arrays,is analyzed in ***,we discuss current challenges and future prospects for the development of inorganic and new materials-based memristors.

关键词： RRAM memristor emerging memories neuromorphic computing electronic synapse resistive switching memristor engineering

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Stabilization of the Anatase Phase of Ti_(1-x)Sn_(x)O_(2) (x < 0.5) Nanofibers

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Nano Research 2010年第4期3卷 256-263页

作者： Kandasami Asokan Jae Young Park Sunwoo choi changhwan Chang Sang Sub Kim School of Materials Science and Engineering Inha UniversityIncheon 402-751Republic of Korea Inter-University Accelerator Centre Aruna Asaf Ali MargNew Delhi 110067India Department of Materials Test and Analysis Research Institute of Industrial Science and TechnologyPohang 790-600Republic of Korea

We experimentally investigate the stabilization of the anatase phase of Ti_(1-x)Sn_(x)O_(2)(x<0.5)nanofibers when synthesized by an electrospinning *** as-spun nanofibers became nano-grained,polycrystalline nanofibers after calcination and the diameters of the nanofibers depend on Sn *** of the anatase phase in Ti-rich compositions and incorporation of Sn ions were confirmed by X-ray diffraction,Raman,X-ray absorption near-edge structure,and photoluminescence(PL)*** from the PL study also demonstrated the tunable nature of the optical properties,with the emission maximum shifting towards higher wavelength with increasing Sn concentration.

关键词： Electrospinning nanofiber Ti_(1-x)Sn_(x)O_(2) X-ray absorption near-edge structure(XANES)

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