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Cytokine Storm of COVID-19 and Its Impact on Patients with and without Chronic Liver Disease

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Journal of Clinical and Translational Hepatology 2021年第2期9卷 256-264页

作者： Madhumita Premkumar chandan kumar Kedarisetty Departments of Hepatology Postgraduate Institute of Medical Education and ResearchChandigarhIndia Department of Hepatology and Liver transplantation Gleneagles Global HospitalHyderabadIndia

The coronavirus pandemic has resulted in increased rates of hepatic decompensation,morbidity and mortality in patients suffering from existing liver disease,and deranged liver biochemistries in those without liver *** patients with cirrhosis with coronavirus disease 2019(COVID-19),new onset organ failures manifesting as acute-onchronic liver failure have also been *** severe acute respiratory syndrome-coronavirus-2(SARS-CoV-2)also directly binds to enterocytes and cholangiocytes via the angiotensin converting enzyme receptor 2,although the lung remains the portal of *** with the COVID-19 related bystander hepatitis,a systemic inflammatory response is noted due to unregulated macrophage activation syndrome and cytokine ***,the exact definition and diagnostic criteria of the‘cytokine storm’in COVID-19 are yet *** addition,inflammatory markers like C-reactive protein,ferritin,D-dimer and procalcitonin are frequently *** in turn leads to disease progression,activation of the coagulation cascade,vascular microthrombi and immune-mediated injury in different organ *** liver chemistries are also noted due to the cytokine storm,and synergistic hypoxic or ischemic liver injury,drug-induced liver injury,and use of hepatotoxic antiviral agents all contribute to deranged liver *** of an unregulated cytokine storm at an early stage may avert disease morbidity and *** immunomodulator drugs and repurposed immunosuppressive agents have been used in COVID-19 with varying degrees of success.

关键词： Chronic liver disease COVID-19 Cytokines Hepatitis Gut-liver axis

Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region

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Journal of Semiconductors 2013年第2期34卷 31-36页

作者： Sudhansu kumar Pati Hemant Pardeshi Godwin Raj N Mohankumar chandan kumar Sarkar Nano Device Simulation Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur University SKP College of Engineering TiruvannamalaiTamilnadu-606 611India

We propose an analytical model for drain current and inversion charge in the subthreshold region for an underlap DG FinFET by using the minimum channel potential method, i.e., the virtual source. The flicker and thermal noise spectral density models are also developed using these charge and current models expression. The model is validated with already published experimental results of flicker noise for DG FinFETs. For an ultrathin body, the degradation of effective mobility and variation of the scattering parameter are considered. The effect of device parameters like gate length Lg and underlap length Lun on both flicker and thermal noise spectral densities are also analyzed. Increasing Lg and Lun, increases the effective gate length, which reduces drain current, resulting in decreased flicker and thermal noise density. A decrease of flicker noise is observed for an increase of frequency, which indicates that the device can be used for wide range of frequency applications.

关键词： flicker noise thermal noise ultrathin body virtual source underlap DG FinFET

Antitubercular therapy in patients with cirrhosis:Challenges and options

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World Journal of Gastroenterology 2014年第19期20卷 5760-5772页

作者： Naveen kumar chandan kumar Kedarishetty Sachin kumar Vikas Khillan Shiv kumar Sarin Departments of Hepatology Institute of Liver and Biliary SciencesVasant KunjNew Delhi 110070India Departments of Pulmonology Institute of Liver and Biliary SciencesVasant KunjNew Delhi-110070India Departments of Microbiology Institute of Liver and Biliary SciencesVasant KunjNew Delhi-110070India

Tuberculosis(TB)has been a human disease for *** frequency is increased manyfold in patients with liver *** gold standard of TB management is a 6-mo course of isoniazid,rifampicin,pyrazinamide and *** good results are seen with this treatment in general,the management of patients with underlying cirrhosis is a *** underlying depressed immune response results in alterations in many diagnostic *** tests used for latent TB have many flaws in this group of *** of four first-line antitubercular drugs are hepatotoxic and baseline liver function is often disrupted in patients with underlying *** of hepatotoxicity is increased in patients with liver cirrhosis,frequently leading to severe liver *** are no established guidelines for the treatment of TB in relation to the severity of liver *** is no consensus on the frequency of liver function tests required or the cutoff used to define *** specific treatment exists for prevention or treatment of hepatotoxicity,making monitoring even more important.A high risk of multidrug-resistant TB is another major worry due to prolonged and interrupted treatment.

关键词： Antitubercular therapy Drug hepatotoxicity Multidrug-resistant tuberculosis Immune dysfunction

A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices

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Journal of Semiconductors 2013年第4期34卷 24-29页

作者： Godwin Raj Hemant Pardeshi Sudhansu kumar Pati N Mohankumar chandan kumar Sarkar Nano Device Simulation Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur UniversityKolkata-700 032India SKP Engineering College TiruvannamalaiTamilnadu-606 611India

We present a two-dimensional electron gas （2DEG） charge-control mobility variation based drain cur- rent model for sheet carrier density in the channel. The model was developed for the AIInGaN/A1N/GaN high- electron-mobility transistor. The sheet carrier density model used here accounts for the independence between the Fermi levels Ef and ns along with mobility for various AI and In molefractions. This physics based ns model fully depends upon the variation of El, u0, the first subband E0, the second subband El, and as. We present a physics based analytical drain current model using ns with the minimum set of parameters. The analytical resuks obtained are compared with the experimental results for four samples with various molefraction and barrier thickness. A good agreement between the results is obtained, thus validating the model.

关键词： 2DEG Fermi level AlInGaN

Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET

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Journal of Semiconductors 2012年第12期33卷 16-22页

作者： Hemant Pardeshi Sudhansu kumar Pati Godwin Raj N Mohankumar chandan kumar Sarkar Nano Device Simulation Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur University SKP Engineering College

We investigate the performance of an 18 nm gate length AIInN/GaN heterostructure underlap double gate MOSFET, using 2D Sentaurus TCAD simulation. The device uses lattice-matched wideband Al0.83In0.17N and narrowband GaN layers, along with high-k Al2O3 as the gate dielectric. The device has an ultrathin body and is designed according to the ITRS specifications. The simulation is done using the hydrodynamic model and interface traps are also considered. Due to the large two-dimensional electron gas （2DEG） density and high velocity, the maximal drain current density achieved is very high. Extensive device simulation of the major device performance metrics such as drain induced barrier lowering （DIBL）, subthreshold slope （SS）, delay, threshold voltage （Vt）, Ion/Ioff ratio and energy delay product have been done for a wide range of gate and underlap lengths. Encouraging results for delay, Ion, DIBL and energy delay product are obtained. The results indicate that there is a need to optimize theIoff and SS values for specific logic design. The proposed AlInN/GaN heterostructure underlap DG MOSFET shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications.

关键词： MOS-HEMT underlap heterostructure ultrathin body interface traps effective mass

A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect

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Journal of Semiconductors 2013年第11期34卷 31-35页

作者： Sudhansu kumar Pati Kalyan Koley Arka Dutta N Mohankumar chandan kumar Sarkar Nano Device Simulation Laboratory Electronics and Telecommunication Engineering Department Jadavpur University SKP College of Engineering Tiruvannamalai

In analog circuit design an important parameter, from the perspective of superior device performance, is linearity. The DG MOSFET in asymmetric mode operation has been found to present a better linearity. In addi- tion to that it provides, at the discretion of analog circuit designer, an additional degree of freedom, by providing independent bias control for the front and the back gates. Here a non-quasi-static （NQS） small signal model for DGMOSFET with asymmetric gate bias is proposed for extracting the parameters of the device using TCAD sim- ulations. The parameters extracted here for analysis are the intrinsic front and back gate to drain capacitance, Cgal and Cgd2, the intrinsic front and back distributed channel resistance, Rgdl and Rgd2 respectively, the transport de- lay, rm, and the inductance, Lsd. The parameter extraction model for an asymmetric DG MOSFET is validated with pre-established extracted parameter data, for symmetric DG MOSFET devices, from the available literature. The device simulation is performed with respect to frequency up to 100 GHz.

关键词： asymmetric DGMOSFET RF modeling small signal analysis parameter extraction

Wide angled‘V’is the perfect disposition of a TIVAD catheter when right internal jugular vein is cannulated to gain central access

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Gastroenterology Report 2019年第5期7卷 374-375,I0003页

作者： Chitresh kumar chandan kumar Jha Raouef Ahmed Bichoo Sanjay kumar Yadav Department of Endocrine Surgery Sanjay Gandhi Postgraduate Institute of Medical SciencesLucknowIndia Present affiliation:Department of Surgical Oncology All India Institute of Medical SciencesNew DelhiIndia Present affiliation:Department of General Surgery All India Institute of Medical SciencesPatnaIndia

Introduction A TIVAD(totally implantable venous access device)catheter is inserted into one of the large veins,usually the superior vena cava(SVC),to gain permanent central venous *** tip of the catheter sits just above the heart in the distal third of the SVC and the other end is attached to the silicon rubber port that sits underneath the skin of the anterior chest wall fixed to the fascia of the pectoralis major muscle at the lateral part of the second rib[1].When the access is made through the right internal jugular vein(IJV),complications are fewer compared to cannulation of the left IJV or subclavian veins[2,3].One of the issues that is frequently encountered during catheter placement in the right IJV is the kinking of the catheter,leading to compromised or absent flow despite successful cannulation and positioning of the central venous catheter.

关键词： rubber attached permanent

A New Voltage Control Strategy to Improve Performance of DSTATCOM in Electric Grid

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CES Transactions on Electrical Machines and Systems 2020年第4期4卷 295-302页

作者： chandan kumar Mahesh KMishra Saad Mekhilef Electronics and Electrical Engineering Department Indian Institute of Technology GuwahatiIndia Electrical Engineering Department Indian Institute of Technology MadrasChennaiIndia Department of Electrical Engineering University of MalayaMalaysia

A new voltage control strategy of distribution static compensator(DSTATCOM)has been proposed in this paper for electric grid *** proposed control scheme combines two methods of DSTATCOM operation to improve its *** power factor and voltage magnitude as degree of freedom,the DSTATCOM provides features such as mitigation of voltage and current harmonics,balancing of source currents,improvement of power factor,voltage regulation during voltage sag and swell,reduction in inverter losses,and control of load power to achieve energy *** performance of proposed DSTATCOM control is better as compared to its conventional operation at any time of *** simulation and experimental results validate the performances.

关键词： Reactive power DSTATCOM multifunctional

Effect of Environment on Photo-detachment Dynamics of Halide Ions： A Model Approach

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Chinese Journal of Chemical Physics 2010年第1期23卷 30-38,I0001页

作者： Bikram Nath chandan kumar Mondal 萨哈核物理研究所晶体学和分了生物学司加尔各答700064 贾德普大学物理化学部化学系加尔各答700032

A two dimensional model approach for the photodetachment dynamics of closed shell an-ionic systems in presence of external light field have been proposed in the context of polar environmental media. The effects of strong coupling between the solvent polarization and the extra charge in the system were studied by a simple model. The electronic states of con-cerned halide ions are represented by a two dimensional model Hamiltonian with a potential V（x,y）=-V0e^-σ（x^2＋y^2）. The time dependent Fourier grid Hamiltonian method have been used to follow the detachment process with fairly high intensities of light. The environmental effects on the dynamics are sought to be modeled by two different ways. The first one was the presence of polar solvents which perturb the energy levels of anionic systems by changing the effective potential surface and the second one was allowing the fluctuation of the well depth randomly to mimic the system in a more realistic view point. The average detachment rate constant is calculated as a function of important parameters of the used light field to explain the effects of solvent field on the dynamical behavior of dipole bound anionic system at least in a qualitative way.

关键词： Photodetachment dynamics Environmental effect Time-dependent Fourier grid Hamiltonian Stochastic deactivation