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The PL "violet shift" of cerium dioxide on silicon

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Chinese Science Bulletin 2001年第24期46卷 2046-2048页

作者： chai chunlin Yang Shaoyan Liu Zhikai Liao Meiyong Chen Nuofu Wang Zhanguo Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied from tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of 'violet shift' was observed.

关键词： cerium dioxide thin film PL violet shift.

XPS Studies of Magnetic Multilayers

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Journal of University of Science and Technology Beijing 2001年第3期8卷 210-213页

作者： Guanghua Yu, Hongchen Zhao, Jiao Teng, chunlin chai, Fengwu Zhu, Yang Xia, Shumin chai Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China Microelectronics Center, Chinese Academy of Science, Beijin Material Science and Eng. School Univ. of Sci. and Technol. Beijing Beijing 100083 China

NiOx/Ni81Fe19 and Co/AlOx/Co magnetic multilayers were fabricated by reactive RF/DC magnetron sputtering on clean glass substrates and oxidized Si (100) substrates, respectively. The exchange biasing field (H-ex) between NiO4 and Ni81Fe19 as a function of NiOx oxidation states was studied by X-ray photoelectron spectroscopy (XPS). The oxidation states and the oxide thickness of Al layers in magnetic multilayer films consisting of Co/AlOx/Co were also analyzed. It is found that the H-sr of NiOx/Ni81Fe19 films only depends on Ni2+ but not on Ni3+ or Ni. The bottom Co can be completely covered by depositing an A I layer thicker than 2.0 nm. The oxide layer was Al2O3, and its thickness was 1.15 mn.

关键词： NiOx exchange biasing field H-ex AlOx X-ray photoelectron spectroscopy (XPS)

Violet/blue photoluminescence from CeO_2 thin film

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Chinese Science Bulletin 2003年第2期48卷 1198-1200页

作者： chai chunlin, YANG Shaoyan, LIU Zhikai, LIAO Meiyong & CHEN Nuofu Key Laboratory of Semiconductor Material Science, Institute of Semi-conductors, Chinese Academy of Sciences, Beijing 100083, China Key Laboratory of Semiconductor Material Science Institute of Semiconductors Chinese Academy of Sciences Beijing China

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thinfilm. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to theelectrons transition from Ce4f band to O2p band and thedefect level to O2p band. And these defects levels were lo-cated in the range of 1 eV around Ce4f band.

关键词： cerium dioxide thin film PL violet/blue.

XPS Studies of Chemical States of NiO/NiFe Interface

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Journal of University of Science and Technology Beijing 2001年第4期8卷 270-273页

作者： Guanghua Yu, chunlin chai, Fengwu Zhu, Jimei Xiao, Wuyan Lai 1)Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China 2)Institute of Physics. Chinese Academy of Sciences. Beijing, 100080, China Materials Science and Engineering School University of Science and Technology Beijing Beijing 100083 China Institute of Physics Chinese Academy of Sciences Beijing 100080 China

Ta/NTiO/NiFe/Ta multilayers were prepared by radio frequency reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached 9.6 x 10(3) A/m. The compositions and chemical states at the interface region of NiO/NiFe were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique, The results show that there are two thermodynamically favorable reactions at NiO/NiFe interface: NiO+Fe = Ni + FeO and 3NiO+2Fe =3 Ni+Fe2O3. The thickness of the chemical reaction area estimated by angle-resolved XPS was about 1-1.5 nm. These interface reaction products appear magnetic defects, and the exchange coupling field H-ex and the coereivity H-c of NiO/NiFe are affected by these defects.

关键词： chemical states exchange coupling field H-ex coercivity H-c X-ray photoelectron spectroscopy (XPS)

APPLICATION OF ELECTRICAL IMPEDANCE MYOGRAPHY IN CHARACTERIZING CARPAL TUNNEL SYNDROME

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现代电生理学杂志 2019年第B3期26卷 3-11页

作者： Chen Lingfen Li Zhao Zhu Yu Yang Ling Hu Shiming chai chunlin Tan Manqing Yu Yude Tian Dong Department of Hand Surgery HuaShan Hospital of Fudan UniversityShanghai 200040China State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Department of Physical Medicine and Rehabilitation Upstate Medical University at SyracuseState University of New YorkSyracuseNew YorkUSA Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

Background:Electrical impedance myography(EIM)is a non-invasive,painless,and easy-to-perform technique for assessing neuromuscular *** evaluated the potential of EIM for quantitatively characterizing carpal tunnel syndrome(CTS).Methods:Healthy subjects and patients with differing severity of CTS underwent EIM measurement of their small hand muscles.A bioelectrical impedance vector analysis(BIVA)method was first applied to display 50-kHz EIM data in a single ***:Patients with more severe CTS had smaller EIM values in the affected *** reactance and phase parameters differed significantly between any two groups(P<0.05).Their accuracy for differentiating between any two adjacent groups was approximately 80%and for other groups was approximately 90%.There was a strong association between EIM and electrophysiology ***:BIVA is convenient and helpful for indicating the differences between healthy subjects and CTS *** results demonstrate EIM’s potential for quantitatively characterizing patients with CTS.

关键词： Electromyography Carpal tunnel syndrome Impedance vector Disease severity Classification Quantitative evaluation

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退耕地山毛桃栽培管理技术

中国野生植物资源 2011年第6期30卷 79-81页

作者：柴春林青海省互助县林业局青海互助810500

在介绍山毛桃生物生态学特性和退耕地栽培现状的基础上,对其种子处理、育苗技术、退耕地造林技术和造林后的栽培管理技术进行了详细阐述。

关键词：山毛桃退耕地育苗技术造林技术栽培管理技术

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花岗岩残积土地基沉降计算的新方法

地下空间与工程学报 2011年第4期7卷 717-722页

作者：柴春林丁波李智艺中国石油工程建设公司辽宁大连116011 深圳地铁集团有限公司广东深圳518026 中国铁道科学研究院深圳研究设计院岩土公司广东深圳518026

地基的变形计算是地基基础设计的一项重要工作内容,地基的变形可以通过各种方法进行计算,本文以附加应力的明德林解为基础,以花岗岩残积土地基为切入点,提出了考虑基础埋深影响的地基沉降计算方法,更加适合高层建筑沉降变形计算;制定出... 详细信息

地基的变形计算是地基基础设计的一项重要工作内容,地基的变形可以通过各种方法进行计算,本文以附加应力的明德林解为基础,以花岗岩残积土地基为切入点,提出了考虑基础埋深影响的地基沉降计算方法,更加适合高层建筑沉降变形计算;制定出了与之相应的无量纲系数表;通过具体的工程实例,与以布西涅斯克解为基础的地基沉降计算方法进行比较,此方法所得结果与实测沉降值更加吻合,既保证了安全性,又经济合理,验证了此方法的合理性和科学性。

关键词：地基最终沉降量深基础明德林解

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西北干旱区文冠果不同繁育技术研究

林业资源管理 2018年第3期 101-106页

作者：柴春林柴春山戚建莉薛睿芦娟甘肃省林业科学研究院青海省互助县实验林场

为了探寻适宜西北干旱区的文冠果繁殖方法与技术,以甘肃选择出的文冠果优良单株为繁殖材料,于2014—2016年对文冠果主要的苗木繁殖方法(播种繁殖、根插繁殖、嫁接繁殖)进行了对比试验研究。结果表明:1)根插繁殖的成活率最高,平均出苗率7... 详细信息

为了探寻适宜西北干旱区的文冠果繁殖方法与技术,以甘肃选择出的文冠果优良单株为繁殖材料,于2014—2016年对文冠果主要的苗木繁殖方法(播种繁殖、根插繁殖、嫁接繁殖)进行了对比试验研究。结果表明:1)根插繁殖的成活率最高,平均出苗率75.33%;其次是播种繁殖,达50%;嫁接繁殖成活率较差,为27.40%。说明根插和种子繁殖适宜文冠果大规模育苗;2)覆膜播种和大田直播的平均出苗率相差不大,分别为51.31%和51.10%。说明文冠果也可直接大田播种;3)覆膜播种和大田直播均存在出苗不整齐的现象;4)由于砧木质量和低温的影响,嫁接成活率较低。研究认为,在西北干旱、缺水和风大的环境条件下,文冠果最好覆膜播种,播前种子最好进行催芽处理;嫁接最好低位培土嫁接或套袋嫁接。

关键词：文冠果播种繁殖根插繁殖嫁接繁殖出苗率西北干旱区

Rare-Earth Functional Films Prepared by Ion Beam Epitaxy

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Journal of Rare Earths 2005年第5期23卷 536-536页

作者： Yang Shaoyan chai chunlin Zhou Jianping Liu Zhikai Chen Yonghai Chen Nuofu Wang Zhanguo Key Laboratory of Semiconductor Materials Science Institute of Semiconductors ChineseAcademy of Sciences Beijing 100083 China

Ion beam epitaxy （IBE） technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion beam epitaxy was reviewed in details. The recent developments and application of IBE on rare-earth functional films is focused, particularly for high-K materials CeO2, photoluminescence materials Gd2O3 and magnetic semiconductor materials Si1-x Gdx.

关键词： rare-earth functional films IBE technology high pure growth low temperature epitaxy