Magnetic property and interface structure of Ta/NiO/NiFe/Ta

作     者：YU Guanghua CHAI Chunlin ZHU Fengwu XIAO Jimei 

作者机构：Department of Materials physicsUniversity of Science and TechnologyBeijing 100083China Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China 

出 版 物：《Chinese Science Bulletin》 (Chin. Sci. Bull.)

年 卷 期：2001年第46卷第5期

页      面：438-440页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：the National Natural Science Foundation of China (Grant No. 19890310) 

主　　题：NiO interface reaction X-ray photoelectron spectros-copy exchange coupling. 

摘      要：Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6 ×103 A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an intermixing layer at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta2O5. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth-profiles is about 8-10 nm.