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电子辐照前后的n型6H-Sic低温正电子捕获的研究

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四川大学学报（自然科学版） 2004年第2期41卷 348-353页

作者：张伶俐邓爱红 Shan Y Y beling c d Fung S 四川大学应用物理系成都610065 香港大学物理系

在20～300K低温范围内,通过对电子辐照前后n型6H Sic正电子湮灭寿命谱的测量,揭示了不同空位型缺陷之间的正电子捕获的竞争.建立了一种用于解释正电子寿命谱测量结果的模型,该模型中费米能级位置的改变可影响缺陷的电离以及正电子在缺... 详细信息

在20～300K低温范围内,通过对电子辐照前后n型6H Sic正电子湮灭寿命谱的测量,揭示了不同空位型缺陷之间的正电子捕获的竞争.建立了一种用于解释正电子寿命谱测量结果的模型,该模型中费米能级位置的改变可影响缺陷的电离以及正电子在缺陷位置的被捕获.根据模型拟合正电子寿命谱数据后得到:在原生的Sic中,正电子最可能被碳空位和碳的双空位所捕获,经估算其浓度分别为1.1×1017cm-3和3.0×1016cm-3;在辐照后的Sic中,正电子最可能被碳的双空位,硅空位或硅空位的杂合态所捕获,经估算其浓度分别为9.8×1016cm-3和5.4×1016cm-3.

关键词：正电子捕获正电子寿命电子辐照碳化硅(Sic)

电子和中子辐照n型6H-Sic的光致发光谱

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Journal of Semiconductors 2006年第Z1期27卷 11-14页

作者：钟志亲龚敏王鸥余洲杨治美徐士杰陈旭东凌志聪冯汉源 beling c d 四川大学物理科学与技术学院成都610064 四川大学物理科学与技术学院成都610064 四川大学物理科学与技术学院成都610064 四川大学物理科学与技术学院成都610064 四川大学物理科学与技术学院成都610064 香港大学物理系香港香港大学物理系香港香港大学物理系香港香港大学物理系香港香港大学物理系香港

对用电子能量为1.7,0.5和0.4MeV的电子辐照和中子辐照后的n型6H-Sic样品进行低温光致发光研究.对于Ee≥0.5MeV电子辐照和中子辐照后的样品,首次发现了位于478.6/483.3/486.1n m的S1/S2/S3谱线.对样品进行热退火研究表明S1/S2/S3谱线在50... 详细信息

对用电子能量为1.7,0.5和0.4MeV的电子辐照和中子辐照后的n型6H-Sic样品进行低温光致发光研究.对于Ee≥0.5MeV电子辐照和中子辐照后的样品,首次发现了位于478.6/483.3/486.1n m的S1/S2/S3谱线.对样品进行热退火研究表明S1/S2/S3谱线在500℃下消失,而退火温度高于700℃时d1中心出现.考虑到产生c空位和Si空位所需的位移阈能以及热退火行为,说明S1/S2/S3为初级Si空位初级缺陷,而d1中心为二次缺陷.

关键词： 6H-Sic 辐照 LTPL 缺陷

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6H-Sic辐照特性的低温光致发光研究

光散射学报 2004年第1期16卷 66-69页

作者：王鸥丁元力钟志亲袁菁龚敏 chen X d Fung S beling c d 四川大学物理科学与技术学院微电子技术四川省重点实验室成都610064 香港大学物理系

本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-Sic在350℃-1650℃温度范围的退火行为进行了研究。在700℃退火后观察到d1中心(d1-center)和位于485.0nm、493.6nm处的发光中心。我们发现d1中心与深能级瞬态谱(dLTS)的E1/E2深能级对... 详细信息

本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-Sic在350℃-1650℃温度范围的退火行为进行了研究。在700℃退火后观察到d1中心(d1-center)和位于485.0nm、493.6nm处的发光中心。我们发现d1中心与深能级瞬态谱(dLTS)的E1/E2深能级对具有不同的退火行为,这否定了它们源于相同的辐照诱生缺陷的观点。d1中心可能源于由空位和反位组成的复合体。

关键词：碳化硅低温光致发光辐照诱生缺陷退火处理零声子谱线

Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOcVd

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chinese Physics Letters 2005年第5期22卷 1214-1217页

作者：胡一帆 c.d.beling S.Fung departmentofPhysics HuazhongUniversityofScienceandTechnologyWuhan430074 departmentofPhysics UniversityofHongKongPokfulamRoadHongKong

depth profiled doppler broadening of positron annihilation spectroscopy(dBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), isused in characterization of GaN grown on sapphire substrates with metal-organic chemical vapourdeposition (MOcVd). The GaN film and the film/substrate interface are investigated. The VEPFIT(variable energy positron lit) software was used for analysing the data, and the positron diffusionlength of the sapphire is obtained. The results suggest that there is a highly defected region nearthe GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interfaceto relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphiresamples, which implanted by Al+ ions, are also investigated. Studies on Al+ implanted GaN films (notincluding the interface and sapphire) have revealed that there are two different regions ofimplantation damage. For the low Al+ implantation dose samples, in the region close to the surface,defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in theinterior region of the film the positron traps are vacancy clusters without micro-voids. For thehighest dose sample, however, some positron trap centres are in the form of micro-voids in thesecond region.

关键词： dEFEcTS

Ultra‑Transparent and Multifunctional IZVO Mesh Electrodes for Next‑Generation Flexible Optoelectronics

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Nano-Micro Letters 2025年第1期17卷 293-309页

作者： Kiran A.Nirmal Tukaram d.dongale Atul c.Khot chenjie Yao Nahyun Kim Tae Geun Kim School of Electrical Engineering Korea UniversityAnam‑ro 145Seongbuk‑guSeoulRepublic of Korea computational Electronics and Nanoscience Research Laboratory School of Nanoscience and BiotechnologyShivaji UniversityKolhapur 416004India

Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic ***,they are crucial for applications in the fields of energy,display,healthcare,and soft *** meshes represent a promising alternative to traditional,brittle,metal oxide conductors due to their high electrical conductivity,optical transparency,and enhanced mechanical *** this paper,we present a simple method for fabricating an ultra-transparent conducting metal oxide mesh electrode using selfcracking-assisted *** this method,we produced an electrode with ultra-transparency(97.39%),high conductance(Rs=21.24Ωsq^(−1)),elevated work function(5.16 eV),and good mechanical *** also evaluated the effectiveness of the fabricated electrodes by integrating them into organic photovoltaics,organic light-emitting diodes,and flexible transparent memristor devices for neuromorphic computing,resulting in exceptional device *** addition,the unique porous structure of the vanadium-doped indium zinc oxide mesh electrodes provided excellent flexibility,rendering them a promising option for application in flexible optoelectronics.

关键词： Self-cracking template Vanadium-doped indium zinc oxide mesh Organic solar cells Organic light-emitting diodes Flexible transparent memory

Positron beam Studies of transients in semiconductors

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Positron beam Studies of transients in semiconductors

Acquired sensorineural hearing loss,oxidative stress,and microRNAs

第九届全国正电子谱学会议

作者： c.d.beling department of Physics The University of Hong KongPokfulam RoadHong KongP.R.C.

A few years ago our laboratory proposed a novel technique for investigating defects in semiconductors that involved combining conventional positron doppler Broadening Spectroscopy (dBS) with deep Level Transient Spectroscopy (dLTS). This new technique, which was referred to as Positron deep Level Transient Spectroscopy (PdLTS) suffered however from a major drawback, namely that the electric fields established in the sample during the transient by virtue of the ionized shallow donors/acceptors would cause positrons to accelerate into the contact/bulk with too small a fraction being available to trap into defects undergoing ionization. The

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Neural Regeneration Research 2025年第9期20卷 2513-2519页

作者： desmond A.Nunez Ru c.Guo division of Otolaryngology–Head&Neck Surgery Department of SurgeryFaculty of MedicineThe University of British ColumbiaVancouverBCCanada division of Otolaryngology–Head&Neck Surgery Gordon&Leslie Diamond Health Care CentreVancouver General HospitalVancouverBCCanada Faculty of Medicine–The University of British columbia VancouverBCCanada

Hearing loss is the third leading cause of human ***-related hearing loss,one type of acquired sensorineural hearing loss,is largely responsible for this escalating global health ***-induced,ototoxic,and idiopathic sudden sensorineural are other less common types of acquired hearing *** etiology of these conditions is complex and multi-fa ctorial involving an interplay of genetic and environmental *** stress has recently been proposed as a likely linking cause in most types of acquired sensorineural hearing *** non-coding RNA sequences known as microRNAs(miRNAs)have increasingly been shown to play a role in cellular hypoxia and oxidative stress responses including promoting an apoptotic *** hair cell death is a central histopathological finding in sensorineural hearing *** these cells do not regenerate in humans,it underlies the irreversibility of human age-related hearing *** EMBASE,Ovid MEdLINE,Web of Science core collection,and *** databases over the period August 1,2018 to July 31,2023 were searched with"hearing loss,""hypoxamiRs,""hypoxia,""microRNAs,""ischemia,"and"oxidative stress"text words for English language primary study publications or registered clinical *** red clinical trials known to the senior author we re also assessed.A total of 222studies were thus *** excluding duplicates,editorials,retra ctions,secondary research studies,and non-English language articles,39 primary studies and clinical trials underwent full-text *** resulted in 11 animal,in vitro,and/or human subject journal articles and 8 registered clinical trial database entries which form the basis of this narrative *** miR-34a and miR-29b levels increase with age in *** miRNAs were demonstrated in human neuroblastoma and murine cochlear cell lines to target Sirtuin 1/peroxisome proliferato r-activated receptor gamma coactivator-1-alpha(SIRT1/P Gc-1α),SIRT

关键词： hearing loss hypoxia microRNAs oxidative stress sensorineural

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GaN中的缺陷与杂质

物理学进展 2001年第1期21卷 1-11页

作者：许小亮施朝淑 S.Fung c.d.beling 中国科学技术大学物理系合肥230026 香港大学物理系

GaN是一种新型的宽禁带半导体兰色发光与激光材料。GaN中的缺陷和杂质对于材料的电学输运特性和发光性能有着至关重要的影响。本文综述了近年来对于GaN中缺陷和杂质的理论与实验研究。包括对天然缺陷与非特意性掺杂的研究。

关键词： GaN 缺陷杂质深能级离子注入半导体材料电学输运特性发光性能

Theoretical Simulation of Positron Annihilation

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Theoretical Simulation of Positron Annihilation