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High speed phase modulators for silicon photonic integrated circuits:a role for lithium niobate?

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Advanced Photonics 2019年第3期1卷 3-5页

作者： Roel Baets bart kuyken Ghent University–imec Photonics Research GroupGentBelgium Ghent University Center for Nano-and BiophotonicsGentBelgium

Lithium niobate(LN)has been and still is a prominent material for high speed optical *** performance of such LN-modulators—as a stand-alone building block for optical systems—has been unchallenged for many *** in many ways it has proven to be very hard to integrate lithium niobate modulators with other functions on a single optical *** a result,scientific interest in this material has been fading away.

关键词： lithium integrate alone

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

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Advanced Photonics 2021年第2期3卷 38-60页

作者： Abdul Rahim Artur Hermans Benjamin Wohlfeil Despoina Petousi bart kuyken Dries Van Thourhout Roel Baets Ghent University Photonics Research GroupDepartment of Information TechnologyGhentBelgium Ghent University IMEC and Center for Nano-and BiophotonicsGhentBelgium ADVA Optical Networking BerlinGermany

Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip *** scaling in data speed and span of the optical links demands modulators to be concurrently performant and *** photonics(SiPh),a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology,is well-positioned to deliver the performance,price,and manufacturing volume for the high-speed modulators of future optical communication *** has relied on the plasma dispersion effect,either in injection,depletion,or accumulation mode,to demonstrate efficient high-speed *** high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent *** years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh *** modulators are in the early years of their *** promise to extend the performance beyond the limits set by the physical properties of *** focus of our study is to provide a comprehensive review of contemporary(i.e.,plasma dispersion modulators)and new modulator implementations that involve the integration of novel materials with SiPh.

关键词： high-speed modulators silicon photonics plasma dispersion effect ferroelectrics graphene III-V on Si organic(electro-optic)materials.

A Ⅲ-Ⅴ-on-Si ultra-dense comb laser

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Light(Science & Applications) 2016年第1期5卷 45-51页

作者： Zhechao Wang Kasper Van Gasse Valentina Moskalenko Sylwester Latkowski Erwin Bente bart kuyken Gunther Roelkens Department of Information Technology(INTEC) Photonics Research GroupGhent University-IMECGent 9052Belgium Center for Nano-and Biophotonics Ghent UniversityGent 9052Belgium Electrical Engineering Department Eindhoven University of TechnologyEindhoven 5600Netherlands

Optical frequency combs emerge as a promising technology that enables highly sensitive,near-real-time spectroscopy with a high *** currently available comb generators are mostly based on bulky and high-cost femtosecond lasers for dense comb generation(line spacing in the range of 100 MHz to 1 GHz).However,their integrated and low-cost counterparts,which are integrated semiconductor mode-locked lasers,are limited by their large comb spacing,small number of lines and broad optical *** this study,we report a demonstration of a Ⅲ-Ⅴ-on-Si comb laser that can function as a compact,low-cost frequency comb generator after frequency *** use of low-loss passive silicon waveguides enables the integration of a long laser cavity,which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition *** 12-nm 10-dB output optical spectrum and the notably small optical mode spacing results in a dense optical comb that consists of over 1400 equally spaced optical *** sub-kHz 10-dB radio frequency linewidth and the narrow longitudinal mode linewidth(o400 kHz)indicate notably stable *** integrated dense comb lasers are very promising,for example,for highresolution and real-time spectroscopy applications.

关键词： mode-locked lasers near-infrared spectroscopy optical frequency comb semiconductor lasers silicon photonics

Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip [Invited]

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Photonics Research 2015年第5期3卷 47-59页

作者： Ananth Z.Subramanian Eva Ryckeboer Ashim Dhakal Frédéric Peyskens Aditya Malik bart kuyken Haolan Zhao Shibnath Pathak Alfonso Ruocco Andreas De Groote Pieter Wuytens Daan Martens Francois Leo Weiqiang Xie Utsav Deepak Dave Muhammad Muneeb Pol Van Dorpe Joris Van Campenhout Wim Bogaerts Peter Bienstman Nicolas Le Thomas Dries Van Thourhout Zeger Hens Gunther Roelkens Roel Baets Photonics Research Group INTEC Department Ghent University-imec Centre for Nano and Biophotonics Ghent University University of California Department of Molecular Biotechnology Ghent University imec Kapeldreef 75 Physics and Chemistry of Nanostructures Ghent University

There is a rapidly growing demand to use silicon and silicon nitride（Si3N4） integrated photonics for sensing applications, ranging from refractive index to spectroscopic sensing. By making use of advanced CMOS technology,complex miniaturized circuits can be easily realized on a large scale and at a low cost covering visible to mid-IR wavelengths. In this paper we present our recent work on the development of silicon and Si3N4-based photonic integrated circuits for various spectroscopic sensing applications. We report our findings on waveguide-based absorption, and Raman and surface enhanced Raman spectroscopy. Finally we report on-chip spectrometers and on-chip broadband light sources covering very near-IR to mid-IR wavelengths to realize fully integrated spectroscopic systems on a chip.

关键词： Invited SOI mode