A Ⅲ-Ⅴ-on-Si ultra-dense comb laser
作者机构：Department of Information Technology(INTEC)Photonics Research GroupGhent University-IMECGent 9052Belgium Center for Nano-and BiophotonicsGhent UniversityGent 9052Belgium Electrical Engineering DepartmentEindhoven University of TechnologyEindhoven 5600Netherlands
出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)
年 卷 期：2016年第5卷第1期
页 面：45-51页
学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程]
主 题：mode-locked lasers near-infrared spectroscopy optical frequency comb semiconductor lasers silicon photonics
摘 要：Optical frequency combs emerge as a promising technology that enables highly sensitive,near-real-time spectroscopy with a high *** currently available comb generators are mostly based on bulky and high-cost femtosecond lasers for dense comb generation(line spacing in the range of 100 MHz to 1 GHz).However,their integrated and low-cost counterparts,which are integrated semiconductor mode-locked lasers,are limited by their large comb spacing,small number of lines and broad optical *** this study,we report a demonstration of a Ⅲ-Ⅴ-on-Si comb laser that can function as a compact,low-cost frequency comb generator after frequency *** use of low-loss passive silicon waveguides enables the integration of a long laser cavity,which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition *** 12-nm 10-dB output optical spectrum and the notably small optical mode spacing results in a dense optical comb that consists of over 1400 equally spaced optical *** sub-kHz 10-dB radio frequency linewidth and the narrow longitudinal mode linewidth(o400 kHz)indicate notably stable *** integrated dense comb lasers are very promising,for example,for highresolution and real-time spectroscopy applications.
维普期刊数据库