检索结果-南通市图书馆

Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nano-Micro Letters 2021年第2期13卷 221-231页

作者： Yuan Xue Shuai Yan Shilong Lv Sannian song zhitang song State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050People’s Republic of China

Phase-change memory(PCM)has considerable promise for new applications based on von Neumann and emerging neuromorphic computing ***,a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures,which is critical for the efficient processing and reliable storage of data at full ***,we report a novel PCM device based on Ta-doped antimony telluride(Sb2Te),which exhibits both high-speed characteristics and excellent high-temperature characteristics,with an operation speed of 2 ns,endurance of >106 cycles,and reversible switching at 140℃.The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure,which improves the thermal ***,the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation,reducing the power consumption and improving the long-term *** findings for this new Ta-Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.

关键词： Phase-change memory High speed Ta High-temperature operation

维普期刊数据库

FPGA-Enhanced Data Processing System Using PCM Technology

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of Electronics 2020年第4期29卷 766-771页

作者： LI Gezi CHEN Xiaogang LI Shunfen MA Bin song zhitang Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences University of Chinese Academy of Sciences

Due to unique features, Storage class memory(SCM) technologies such as Phase change memory(PCM) open up new opportunities for architect *** such a scenario, we present a true PCM storage system with an FPGA storage controller to explore ISP *** contributions are summarized as follows.1) Propose a heterogeneous ISP architecture which uses FPGA working as storage controller and accelerator;2) Offer a new research direction for designing storage devices which inherently support ISP; 3) Present a novel storage system which eliminate data transfer; 4) The first evaluation of ISP on a real SCM device; 5) Demonstrate significant performance gains by using efficient data flow and consuming extremely small amounts of host ***, the proposed system can be extended to handle other kinds of data applications by adding corresponding accelerator and data conversion module in *** system can be realized for more aggressive results.

关键词： Storage system Phase change memory(PCM) Field programmable gate array(FPGA) Storage class memory(SCM) In-storage processing(ISP)

Synthesis and Properties of Porous Organic Polymers from a Rigid Macrocyclic Building Block

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Journal of Chemistry 2013年第5期31卷 577-581页

作者： Jingru song zhitang Huang Qiyu Zheng Beijing National Laboratory for Molecular Science CAS Key Laboratory of Molecular Recognition and Function Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China

Two rigid macrocyclic CTV-based porous organic polymers, Click-POP-1 and Click-POP-2, have been synthe- sized by Click reaction of a cyclotriveratrylene analogue with alkyne groups and aromatic azides in one pot. FTIR, solid 13C NMR and elemental analysis confirmed the formation of the polymers. Both of them possess high thermo-stability which is up to 410 and 900 ℃, respectively, and moderate hydrogen storage properties with 0.46 wt% at 77 K. Their nitrogen uptake showed type-I isotherm with BET surface areas up to 342 and 317 m2·g ^-1.

关键词： cyclotriveratrylene porous organic polymer hydrogen uptake click reaction amorphous

From octahedral structure motif to sub-nanosecond phase transitions in phase change materials for data storage

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2018年第8期61卷 132-146页

作者： zhitang song Sannian song Min ZHU Liangcai WU Kun REN Wenxiong song songling FENG State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences

Phase change random access memory(PCRAM) has been successfully applied in the computer storage architecture, as storage class memory, to bridge the performance gap between DRAM and Flashbased solid-state drive due to its good scalability, 3 D-integration ability, fast operation speed and compatible with CMOS technology. Focusing on phase change materials and PCRAM for decades, we have successfully developed 128 Mb embedded PCRAM chips, which can meet the requirements of most embedded systems.3 D Xpoint(3 D PCRAM), invented by Intel and Micron, has been regarded as a new breakthrough in the last 25 years since the application of NAND in 1989, which represents state-of-the-art memory *** technology has some remarkable features, such as the confined device structure with 20 nm size, the metal crossbar electrodes to reduce the resistance variations in PCRAM arrays, and the ovonic threshold switching selector that can provide a high drive current and a low leakage current. A good understanding of phase change mechanism is of great help to design new phase change materials with fast operation speed,low power consumption and long-lifetime. In this paper, we firstly review the development of PCRAM and different understandings on phase change mechanisms in recent years, and then propose a new view on the mechanism, which is based on the octahedral structure motifs and vacancies. Octahedral structure motifs are generally found in both amorphous and crystalline phase change materials. They are considered to be the basic units during phase transition, which are severely defective in the amorphous phase. These configurations turn into more ordered ones after minor local rearrangements, the growth of which results in the crystallization of rocksalt(RS) phase with a large amount of vacancies in the cation sites. Further driven by thermodynamic driving force, these vacancies move and layer along certain directions; consequently, the metastable RS structure transforms in

关键词： phase change memory phase change materials octahedral structure motif fast crystallization speed phase change mechanism

Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Nano Research 2021年第1期14卷 232-238页

作者： Chaoqi Dai Peiqin Chen Shaocheng Qi Yongbin Hu zhitang song Mingzhi Dai College of Materials Science and Engineering Kunming University of Science and TechnologyKunming 650093China Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Shanghai Microsystem and Information Technology Institute Chinese Academy of SciencesShanghai 200433China

There is a continuous demand to reduce the size of the devices that form a unit circuit,such as logic gates and memory,to reduce their footprint and increase device *** order to achieve a highly efficient circuit architecture,optimizations need to be made in terms of device ***,the time involved in the current reduction of device sizes according to Moore's Law has slowed ***,we propose a flexible transistor with ultra-thin IGZO(InGaZnO,indium-gallium-zinc-oxide)as the channel material,which not only scales down the footprints of multi-transistor logic gates but also combines the functions of the logic gates,memory,and sensors into a single *** transistor proposed here has an ultrathin semiconductor layer and can implement the typical functions of logic gates that conventionally have 2-6 ***,it demonstrates the memory effect with a programming time as low as 5 *** design can also display various artificial synaptic *** new device design and structure can be adopted for the development of next-generation flexible electronics that require higher integration.

关键词： small footprint flexible electronics neuromorphic circuit logic gates memory sensors

Chalcogenide Ovonic Threshold Switching Selector

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nano-Micro Letters 2024年第5期16卷 1-40页

作者： Zihao Zhao Sergiu Clima Daniele Garbin Robin Degraeve Geoffrey Pourtois zhitang song Min Zhu National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050People’s Republic of China University of Chinese Academy of Sciences Beijing 100029People’s Republic of China IMEC Kapedreef 75LeuvenBelgium

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or *** Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising *** Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent *** this paper,we begin by providing a brief introduction to the discovery process of the OTS ***,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material ***,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection ***,we review the progress and innovations in OTS mechanism ***,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.

关键词： Non-volatile memory Ovonic threshold switch(OTS) Chalcogenide Selector

维普期刊数据库

Phase-change memory based on matched Ge-Te,Sb-Te,and In-Te octahedrons:Improved electrical performances and robust thermal stability

在线全文

学校读者我要写书评

暂无评论

InfoMat 2021年第9期3卷 1008-1015页

作者： Ruobing Wang zhitang song Wenxiong song Tianjiao Xin Shilong Lv Sannian song Jun Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information TechnologyChinese Academy of SciencesShanghaiPeople's Republic of China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingPeople's Republic of China Yangtze Advanced Memory Industry Innovation Center Co. Ltd.WuhanPeople's Republic of China

Phase-change memory(PCM)has been developed for three-dimensional(3D)data storage devices,posing huge challenges to the thermal stability and reliability of ***,the low thermal stability of Ge2Sb2Te5(GST)limits further ***,we demonstrate PCM based on In0.9Ge2Sb2Te5(IGST)alloy,showing 180C 10-years data retention,6 ns set speed,one order of magnitude longer life time,and 75%reduced power consumption compared to GST-based *** In can occupy the cationic positions and the In-Te octahedrons with good phase-change properties can geometrically match well with the host Ge-Te and Sb-Te octahedrons,acting as nucleation centers to boost the set speed and enhance the endurance of IGST *** stable matched phase-change octahedrons can be a feasible way to achieve practical PCMs.

关键词： improved performances matched octahedrons phase-change memory robust thermal stability

A snake addressing scheme for phase change memory testing

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2016年第10期59卷 222-232页

作者： Xiaole CUI Zuolin CHENG Chunglen LEE Xinnan LIN Yiqun WEI Xiaogang CHEN zhitang song Key Laboratory of Integrated Microsystems Peking University Shenzhen Graduate School State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences

Phase change memory(PCM) is one of the most promising candidates for next generation nonvolatile memory. However, PCM suffers from a variety of faults due to its special device structure and operation mechanism. A snake addressing scheme is introduced into the test algorithms of PCM to reduce the test time and excite proximity disturb faults more effectively. The March test algorithm with the proposed snake addressing scheme is less complex than most traditional test algorithms. In addition to conventional faults, it is capable of covering disturb and parasitic faults. Moreover, when incorporated with the sneak path testing method, it is able to test the read fault, read recovery fault, incomplete program fault 0, and false write fault.

关键词： phase change memory fault model snake addressing mode March test algorithm sneak path test method

A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Nano-Micro Letters 2015年第2期7卷 172-176页

作者： zhitang song Yi Peng Zhan Daolin Cai Bo Liu Yifeng Chen Jiadong Ren State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-system and Information TechnologyChinese Academy of Sciences Semiconductor Manufacturing International Corporation

In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change resistor was then integrated after CMOS logic fabrication. The PCRAM was successfully embedded without changing any logic device and process, in which 1.1 V negative-channel metal-oxide semiconductor device was used as the memory cell selector. The currents and the time of SET and RESET operations were found to be 0.2 and 0.5 m A, 100 and 10 ns,respectively. The high speed performance of this chip may highlight the design advantages in many embedded applications.

关键词： PCRAM Ti0.4Sb2Te3alloy CMOS NMOS

维普期刊数据库