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Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

作     者:Yuan Xue Shuai Yan Shilong Lv Sannian Song Zhitang Song Yuan Xue;Shuai Yan;Shilong Lv;Sannian Song;Zhitang Song

作者机构:State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050People’s Republic of China 

出 版 物:《Nano-Micro Letters》 (纳微快报(英文版))

年 卷 期:2021年第13卷第2期

页      面:221-231页

核心收录:

学科分类:0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程(可授工学、理学学位)] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术(可授工学、理学学位)] 0702[理学-物理学] 

基  金:supported by the National Key Research and Development Program of China(2017YFA0206101,2017YFB0701703,2017YFA0206104,2017YFB0405601,2018YFB0407500) the National Natural Science Foundation of China(91964204,61874178,61874129) the Science and Technology Council of Shanghai(20501120300,18DZ2272800) the Shanghai Sailing Program(19YF1456100). 

主  题:Phase-change memory High speed Ta High-temperature operation 

摘      要:Phase-change memory(PCM)has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems.However,a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures,which is critical for the efficient processing and reliable storage of data at full capacity.Herein,we report a novel PCM device based on Ta-doped antimony telluride(Sb2Te),which exhibits both high-speed characteristics and excellent high-temperature characteristics,with an operation speed of 2 ns,endurance of 106 cycles,and reversible switching at 140℃.The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure,which improves the thermal stability.Furthermore,the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation,reducing the power consumption and improving the long-term endurance.Our findings for this new Ta-Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.

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