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Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices

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Chinese Journal of Electrical Engineering 2020年第3期6卷 25-34页

作者： Haidong Yan Peijie Liang Yunhui Mei zhihong feng School of Mechanical and Electrical Engineering Guilin University of Electronic TechnologyGuilin 541004China Guangxi Key Lab of Manufacturing System and Advanced Manufacturing Technology Guilin 541004China School of Materials Science and Engineering Tianjin UniversityTianjin 300072China Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education Guilin 541004China National Key Lab of Application Specific Integrated Circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China

Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power *** thermal conductivity,high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices,specifically SiC *** merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale,micro-scale and micro-nano-scale hybrid silver sintered materials are separately *** emerging rapid sintering approaches,such as the electric-assisted approach,are briefly introduced and the technical outlook is *** addition,the study highlights the importance of creating a brief resource guide on using the correct sintering methods.

关键词： Pressure-less sintering pressure-assisted nanosilver paste high-temperature power module insulated gate bipolar translators(IGBT) silicon carbide(SiC)

Comparative proteomic profiles of resistant/susceptible cucumber leaves in response to downy mildew infection

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Horticultural Plant Journal 2021年第4期7卷 327-340页

作者： Chengzhen Sun Xiaofei Song Jinshuang Zheng Xiaoli Li zhihong feng Liying Yan Hebei Key Laboratory of Horticultural Germplasm Excavation and Innovative Utilization QinhuangdaoHebei 066004China College of Horticulture Science and Technology Hebei Normal University of Science and TechnologyQinhuangdaoHebei 066004China

Downy mildew is a serious disease in cucumber production worldwide,which is caused by Pseudoperonospora cubensis(Berk.&Curt.)*** the mechanism of cucumber response to downy mildew infection is important for breeding improvement and production;however,the research remains largely elusive.A comparative proteomic approach was used to reveal the differential accumulation of the proteomes from leaves of cucumber(susceptible line and resistant line)that were inoculated with *** or not by two-dimensional electrophoresis and MALDI-TOF/TOF MS.A total of 76 protein spots were successfully identified with significant changes in abundance(>2-fold,P<0.05)in downy mildew infected or not leaves for the susceptible line and resistant *** the functional annotation,these proteins were classified into 8 groups including photosynthesis(29%),energy and metabolism(29%),cell rescue and defense(17%),and protein biosynthesis,folding and degradation(13%),unclassified(7%),nucleotide metabolism(3%),signal transduction(1%)and cellular process(1%).Among the 17 differentially expressed proteins between the resistant and susceptible cucumber line,most of the protein spots were concentrated in cell rescue and defense(4)and energy and metabolism(4).Moreover,a schematic diagram containing majority of the metabolic pathways of cucumber leaves in response to downy mildew was *** network revealed the positive effect of several functional components in cucumber seedlings’resistant to downy mildew such as accumulation of energy supply and resistance-related proteins,hastened protein metabolism and photorespiratory,inhibited photosynthesis,and triggered photosystem repair and programmed cell *** together,these results have advanced a further understanding of the key metabolic pathways of cucumber resistance to downy mildew and pathogen control in the proteomic level.

关键词： Defense response Downy mildew Proteomics Cucumber

2.83-kV double-layered NiO/β-Ga_(2)O_(3) vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm^(2)

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Journal of Semiconductors 2023年第7期44卷 28-31页

作者： Tingting Han Yuangang Wang Yuanjie Lv Shaobo Dun Hongyu Liu Aimin Bu zhihong feng National Key Laboratory of Application Specific Integrated Circuit(ASIC) Hebei Semiconductor Research InstituteShijiazhuang 050051China

This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied *** bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode *** with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 ***,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift *** specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE *** results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.

关键词： β-Ga_(2)O_(3) breakdown voltage heterojunction diode(HJD) junction termination extension(JTE) power figure-of-merit(PFOM)

Quantificational analysis on progress of river water quality in China

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Journal of Environmental Sciences 2009年第6期21卷 770-773页

作者： YUN Yi,ZOU zhihong,feng Wei,RU Mai School of Economics and Management,Beihang University,Beijing 100191,China. [a]School of Economics and Management Beihang University Beijing 100191 China. E-mail: winniecloud81@***

In order to understand the dynamic change of water quality in a specific period of time,a type of possibility transition matrix based on the theory of Markov process was *** transition possibility with a weight to calculate the degree of absolute advancement was given based on the result of water quality *** concept of relative advancement was *** was used to evaluate the extent of water quality changed in a period of *** method was used to calculate the degrees of relative advancement for 4 rivers in China,and the results were analyzed.

关键词： water quality evaluation possibility transition matrix Markov process degree of advancement

Landscape Construction of Urban Luxury Hotel:A Case Study of Taiyuan Wanda Vista Hotel

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Journal of Landscape Research 2016年第6期8卷 1-4页

作者： feng zhihong Wanda Commercial Planning & Research Institute Co. Ltd.

Through analysis on landscape planning and design,construction process management and control of the Ta iyuan Wanda Vista Hotel,landscape planning and design ideas,plant species selection and construction experience of the urban luxury hotel are summed up,which provides a reference for the related profession designing and constructing landscape aspect of urban luxury hotel.

关键词： Luxury hotel Landscape construction Planning and design

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

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Science China(Technological Sciences) 2013年第4期56卷 957-962页

作者： feng zhihong WANG JingJing HE ZeZhao DUN ShaoBo YU Cui LIU JinLong ZHANG PingWei GUO Hui LI ChengMing CAI ShuJun Science and Technology on ASIC Laboratory Hebei Semiconductor Research Institute School of Information Engineering Hebei University of Technology School of Materials Science and Engineering University of Science and Technology Beijing Hebei Institute of Laser

Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline *** DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of 6 V,and a maximum transconductance of 20 mS/mm at a gate-source voltage of 1.5 *** small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were *** extrinsic cut-off frequency (fT) of 1.7 GHz and the maximum oscillation frequency (fmax) of 2.5 GHz were obtained,which was the first report on diamond MESFETs with RF characteristics in China.

关键词： diamond wide band gap semiconductors carbon based electronics semiconductor devices RF performances

Coeffect of trapping behaviors on the performance of GaN-based devices

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Journal of Semiconductors 2018年第9期39卷 50-54页

作者： Xingye Zhou Xin Tan Yuangang Wang Xubo Song Peng Xu Guodong Gu Yuanjie Lü zhihong feng National Key Laboratory of ASIC Hebei Semiconductor Research Institute

Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient simulation is a useful technique for analyzing the mechanism of current collapse. In this paper, the coeffect of surface-and bulk-trapping behaviors on the performance of Al Ga N/Ga N HEMTs is investigated based on the two-dimensional（2 D） transient simulation. In addition, the mechanism of trapping effects is analyzed from the aspect of device physics. Two simulation models with different types of traps are used for comparison, and the simulated results reproduced the experimental measured data. It is found that the final steady-state current decreases when both the surface and bulk traps are taken into account in the ***, contrary to the expectation, the total current collapse is dramatically reduced（e.g. from 18% to 4% for the 90 nm gate-length device）. The results suggest that the surface-related current collapse of Ga N-based HEMTs may be mitigated in some degree due to the participation of bulk traps with short time constant. The work in this paper will be helpful for further optimization design of material and device structures.

关键词： GaN-based HEMT device physics trapping effect transient simulation

Geochemical Characteristics of the Tayuan Volcanic Rocks in the Daxinganling Metallogenic Belt

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Acta Geologica Sinica(English Edition) 2017年第S1期91卷 68-69页

作者： LI Chao Ren Tao HUANG Jianguo HAN Runsheng ZHOU Hongyang feng zhihong Kunming University of Science and Technology Kunming 650093China Yunnan Chihong Zinc&Germanium Limited Liability Company Kunming 650000China Daxinganling Yunye Mining Development Limited Liability Company Jiagedaqi 165021China

1 Introduction Daxinganling region is one of the most important nonferrous metal metallogenetic province(Wu et al.,2011;Li et al.,2014).The northern Daxinganling was a geological blank area in China formerly(Li et al.... 详细信息

关键词： Li In Geochemical Characteristics of the Tayuan Volcanic Rocks in the Daxinganling Metallogenic Belt

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

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Journal of Semiconductors 2024年第1期45卷 38-41页

作者： Yansheng Hu Yuangang Wang Wei Wang Yuanjie Lv Hongyu Guo Zhirong Zhang Hao Yu Xubo Song Xingye zhou Tingting Han Shaobo Dun Hongyu Liu Aimin Bu zhihong feng National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China

In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are *** asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power *** breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 *** maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,*** results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications.

关键词： freestanding GaN substrates AlGaN/GaN HEMTs continuous-wave power density breakdown voltage Γ-shaped gate