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Air-Stable,Eco-Friendly RRAMs Based on Lead-Free Cs_(3)Bi_(2)Br_(9)Perovskite Quantum Dots for High-Performance Information Storage

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Energy & Environmental Materials 2023年第5期6卷 406-414页

作者： Xiaofei Cao Zhuangzhuang Ma Teng Cheng Yadong Wang zhifeng shi Jizheng Wang Li Zhang School of Materials Science and Engineering Zhengzhou UniversityZhengzhou 450001China Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China

Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)***,their inferior memory properties compared with the lead-based analogs hinder their ***,the lead-free Cs_(3)Bi_(2)Br_(9)perovskite quantum dot(PQD)-based RRAMs are reported with outstanding memory performance,where Cs_(3)Bi_(2)Br_(9)quantum dots(QDs)are synthesized via a modified ligand-assisted recrystallization *** is the first report of applying Cs_(3)Bi_(2)Br_(9)QDs as the switching layer for RRAM *** Cs_(3)Bi_(2)Br_(9)QD device demonstrates nonvolatile resistive switching(RS)effect with large ON/OFF ratio of 105,low set voltage of-0.45 V,as well as good reliability,reproducibility,and ***,the device exhibits the notable tolerance toward moisture,heat and light illumination,and long-term stability of 200 *** impressively,the device shows the reliable light-modulated RS behavior,and therefrom the logic gate operations including"AND"and"OR"are implemented,foreboding its prospect in logic circuits integrated with storage and *** multifunctionality of device could be derived from the unique 2D layered crystal structure,small particle size,quantum confinement effect,and photoresponse of Cs_(3)Bi_(2)Br_(9)*** work provides the strategy toward the high-performance RRAMs based on stable and eco-friendly perovskites for future applications.

关键词： air stability high memory performance lead-free perovskite quantum dots light-assisted logic gate operation RRAM devices

Lanthanide-based ratiometric luminescence nanothermometry

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Nano Research 2023年第2期16卷 2949-2967页

作者： Mochen Jia Xu Chen Ranran Sun Di Wu Xinjian Li zhifeng shi Guanying Chen Chongxin Shan Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage School of Chemistry and Chemical Engineering&Key Laboratory of Micro-systems and Micro-structuresMinistry of EducationHarbin Institute of TechnologyHarbin 150001China

Luminescent nanothermometry can precisely and remotely measure the internal temperature of objects at nanoscale precision,which,therefore,has been placed at the forefront of scientific *** particular,due to the high photochemical stability,low toxicity,rich working mechanisms,and superior thermometric performance,lanthanide-based ratiometric luminesencent thermometers are finding prevalent uses in integrated electronics and optoelectronics,property analysis of in-situ tracking,biomedical diagnosis and therapy,and wearable e-health *** recent progresses,it remains debate in terms of the underlying temperature-sensing mechanisms,the quantitative characterization of performance,and the reliability of temperature *** this review,we show the origin of thermal response luminescence,rationalize the ratiometric scheme or thermometric mechanisms,delve into the problems in the characterization of thermometric performance,discuss the universal rules for the quantitative comparison,and showcase the cutting-edge design and emerging applications of lanthanide-based ratiometric ***,we cast a look at the challenges and emerging opportunities for further advances in this field.

关键词： luminescent nanothermometry lanthanide ions ratiometric thermometers thermal imaging

Doping suppresses lattice distortion of vacant quadruple perovskites to activate self-trapped excitons emission

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Nano Research 2024年第4期17卷 3068-3078页

作者： Zhipeng Chen Fei Zhang Dongwen Yang Huifang Ji Xu Chen Di Wu Xinjian Li Yu Zhang zhifeng shi Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China State Key Laboratory on Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China

The vacancy-ordered quadruple perovskite Cs_(4)CdBi_(2)Cl_(12),as a newly-emerging lead-free perovskite system,has attracted great research interest due to its excellent stability and direct band ***,the poor luminescence performance limits its application in light-emitting diodes(LEDs)and other ***,for the first time,an Ag^(+)ion doping strategy was proposed to greatly improve the emission performance of Cs_(4)CdBi_(2)Cl_(12) synthesized by hydrothermal *** functional theory calculations combined with experimental results evidence that the weak orange emission from Cs_(4)CdBi_(2)Cl_(12) is attributed to the phonon scattering and energy level crossing due to the large lattice distortion under excited ***,Ag^(+)ion doping breaks the intrinsic crystal field environment of Cs_(4)CdBi_(2)Cl_(12),suppresses the crossover between ground and excited states,and reduces the energy loss in the form of nonradiative *** a critical doping amount of 0.8%,the emission intensity of Cs_(4)CdBi_(2)Cl_(12):Ag^(+)reaches the maximum,about eight times that of the pristine ***,the doped Cs_(4)CdBi_(2)Cl_(12) still maintains excellent stability against heat,ultraviolet irradiation,and environmental oxygen/*** above advantages make it possible for this material to be used as solid-state phosphors for white LEDs applications,and the Commission International de I’Eclairage color coordinates of(0.31,0.34)and high color rendering index of 90.6 were *** importantly,the white LED demonstrates remarkable operation stability in air ambient,showing almost no emission decay after a long working time for 48 *** believe that this study puts forward an effective ion-doping strategy for emission enhancement of vacancy-ordered quadruple perovskite Cs_(4)CdBi_(2)Cl_(12),highlighting its great potential as efficient emitter compatible for practical applications.

关键词： Cs_(4)CdBi_(2)Cl_(12) self-trapped excitons ion doping emission enhancement stability

Recent Advances and Opportunities of Lead-Free Perovskite Nanocrystal for Optoelectronic Application

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Energy Material Advances 2021年第1期2021卷 295-332页

作者： Fei Zhang Zhuangzhuang Ma zhifeng shi Xu Chen Di Wu Xinjian Li Chongxin Shan Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China

Metal halide perovskite nanocrystals(NCs),as a new class of light-emitting and light-harvesting materials,have recently attracted intensive attention for an impressive variety of optoelectronic ***,the lead toxicity and poor stability of such materials severely restrict their practical applications and future ***-free perovskite NCs and their derivatives,designed by the reasonable chemical substitution of Pb with other nontoxic elements,are recently booming as an attractive alternative to lead-based *** this review,we firstly present a comprehensive overview of currently explored lead-free perovskite NCs with an emphasis on their design routes,morphologies,optoelectronic properties,and environmental stability ***,we discuss the preliminary achievements of lead-free perovskite NCs in versatile optoelectronic applications,such as light-emitting devices,solar cells,photodetectors,and *** finish this review with a critical outlook into the currently existing challenges and possible development opportunities of this rapidly evolving field.

关键词： field. perovskite stability

Solubility of ammonium paratungstate in the system NH_3·H_2O·H_2O

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Rare Metals 2003年第1期22卷 10-13,18页

作者： WAN Linsheng, XU zhifeng, and shi ZhonglingFaculty of Materials and Chemical Engineering, Southern Institute of Metallurgy, Ganzhou 341000, China Faculty of Materials and Chemical Engineering Southern Institute of Metallurgy Ganzhou 341000

The equilibrium solubilities of 5(NH4)O·12WO3·5H2O (APT·5H2O) were determined at the terminal ammonia concentration of 2 mol/L at 87-95℃. Experimental data were regressed. The linear functional relation between the solubility of APT- 5H2O and the temperature (t /℃) is given as y = - 588.08 + 7.28t. The solubility of the species as a function of the terminal ammonia concentration (x / mol · L-1) is also achieved: y = 36.76 + 18.86x. The solubility of APT · 5H2O produced by ion-exchange method in China is much lower, which is due to much lower silica, much higher NH4Cl, and a small amount of APT · 7H2O with low solubility in the APT crystals. APT · 7H2O forms because of a large amount of NH4Cl and the low activity of water in the crystallization.

关键词： hydrometallurgy ammonium paratungstate (APT) regressive analysis solubility

Robust frequency-upconversion lasing operated at 400 K from inorganic perovskites microcavity

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Nano Research 2022年第1期15卷 492-501页

作者： zhifeng shi Fei Zhang Jingjing Yan Yuan Zhang Xu Chen Shu Chen Di Wu Xinjian Li Yu Zhang Chongxin Shan Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China State Key Laboratory on Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityQianjin Street 2699Changchun 130012China

Multi-photon-pumped lasing based on metal-halide perovskites is promising for nonlinear optics and practical frequency-upconversion devices in integrated photonic ***,at present almost all the multi-photon-pumped lasing emissions from perovskite microcavities were limited for two-photon excitation,and also suffered from a compromise in room temperature or low temperature operation *** this study,based on the vapor-phase epitaxial CsPbBr3 microplatelets with high crystallinity,self-formed high-quality microcavities,and great thermal stability,low-threshold and high-quality factor whispering gallery mode lasing was realized under single-,two-,and three-photon excitation,and the lasing action is very stable under continuous pulsed laser irradiation(~3.6×10^(7) laser shots).More importantly,the three-photon-pumped lasing can be efficiently sustained at a high temperature of~400 K,and the characteristic temperature was determined to be as high as~152.6 K,indicating the highly temperature-insensitive gain *** that this is the first report on high-temperature three-photon-pumped lasing on perovskite ***,an aggressive thermal cycling test(two cycles,290-400-290 K)was further performed to indicate the stability and repeatability of the multi-photon-pumped lasing *** can be anticipated that the results obtained represent a significant step toward the temperature-insensitive frequency-upconversion lasing,inspiring the exploitation of advantageous perovskites for novel applications.

关键词： frequency-upconversion lasing perovskite microcavity high-temperature characteristic temperature stability

Van der Waals integration inch-scale 2D MoSe_(2) layers on Si for highly-sensitive broadband photodetection and imaging

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Nano Research 2023年第8期16卷 11422-11429页

作者： Yupiao Wu Shuo-En Wu Jinjin Hei Longhui Zeng Pei Lin zhifeng shi Qingming Chen Xinjian Li Xuechao Yu Di Wu School of Physics and Microelectronics and Key Laboratory of Material PhysicsZhengzhou UniversityZhengzhou 450052China Department of Electrical and Computer Engineering University of California San DiegoLa JollaCA 92093USA School of Microelectronics Science and Technology Sun Yat-Sen UniversityZhuhai 519082China Key Laboratory of Multifunctional Nanomaterials and Smart Systems Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

As one of the most promising materials for two-dimensional transition metal chalcogenides(2D TMDs),molybdenum diselenide(MoSe_(2))has great potential in photodetectors due to its excellent properties like tunable bandgap,high carrier mobility,and excellent air *** 2D MoSe_(2)-based photodetectors have been reported to exhibit admired performance,the large-area 2D MoSe_(2)layers are difficult to be achieved via conventional synthesis methods,which severely impedes its future ***,we present the controllable growth of large-area 2D MoSe_(2)layers over 3.5-inch with excellent homogeneity by a simple post-selenization ***,a high-quality n-MoSe_(2)/p-Si van der Waals(vdW)heterojunction device is in-situ fabricated by directly growing 2D n-MoSe_(2)layers on the patterned p-Si substrate,which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W^(−1),a high specific detectivity of 10^(13) Jones,and a fast response time to follow nanosecond pulsed optical *** addition,thanks to the inch-level 2D MoSe_(2)layers,a 4×4 integrated heterojunction device array is achieved,which has demonstrated good uniformity and satisfying imaging *** large-area 2D MoSe_(2)layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.

关键词： molybdenum diselenide large-area synthesis broadband photodetector integrated device array van der Waals(vdW)heterojunction

Parametric study on controllable growth of SrZrS_(3)thin films with good conductivity for photodetectors

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Nano Research 2023年第5期16卷 7867-7873页

作者： Yurun Liang Yuewen Zhang Jie Xu Jingli Ma Huifang Jiang Xin Li Baolin Zhang Xu Chen Yongtao Tian Yanbing Han zhifeng shi Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou 450052China

SrZrS_(3)is a promising chalcogenide perovskite with unique advantages including high abundance of consisting elements,high chemical stability,strong light absorption above its direct band gap,excellent carrier transport *** unfortunately,due to the lack of breakthroughs in its thin film synthesis technique,its optoelectronic properties are not fully investigated,not to mention the device *** this work,large-area and uniform SrZrS_(3)thin film(5 cm×5 cm)was prepared by facile sputtering method,followed by a post-annealing treatment at a high temperature of 1000℃for 2–12 h under CS_(2)*** SrZrS_(3)samples prepared adopt distorted orthorhombic structure with pnma space group and have high *** addition,the band gap of SrZrS_(3)thin film is measured to be 2.29 eV,higher than that of the powder form(2.06 eV).Importantly,the light absorption coefficient of SrZrS_(3)thin film reaches over 105 cm^(−1),the carrier mobility is as high as 106 cm^(2)/(V∙s).The above advantages allow us to use the SrZrS_(3)thin film as photoactive layer for photodetector ***,a symmetrically structured photoconductive detector was fabricated,performing a high responsivity of 8 A/W(405 nm light excitation).These inspiring results promise the glorious application potential of SrZrS_(3)thin film in photodetectors,solar cells,other optoelectronic devices.

关键词： chalcogenide perovskite thin film SrZrS_(3) sputter photodetector

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe_(2)/β-Ga_(2)O_(3)2D/3D Schottky junction with ultrafast speed

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Nano Research 2021年第6期14卷 1973-1979页

作者： Di Wu Zhihui Zhao Wei Lu Lukas Rogée Longhui Zeng Pei Lin zhifeng shi Yongtao Tian Xinjian Li Yuen Hong Tsang School of Physics and Microelectronics and Key Laboratory of Material PhysicsZhengzhou UniversityZhengzhou450052China Department of Applied Physics The Hong Kong Polytechnic UniversityHung HomKowloonHong KongChina

There is an emerging need for high-sensitivity solar-blind deep ultraviolet(DUV)photodetectors with an ultra-fast response *** nanoscale devices based on Ga_(2)O_(3)nanostructures have been developed,their practical applications are greatly limited by their slow response speed as well as low specific ***,the successful fabrication of two-/three-dimensional(2D/3D)graphene(Gr)/PtSe2/β-Ga_(2)O_(3)Schottky junction devices for high-sensitivity solar-blind DUV photodetectors is *** from the high-quality 2D/3D Schottky junction,the vertically stacked structure,and the superior-quality transparent graphene electrode for effective carrier collection,the photodetector is highly sensitive to DUV light illumination and achieves a high responsivity of 76.2 mA/W,a large on/off current ratio of~105,along with an ultra-high ultraviolet(UV)/visible rejection ratio of 1.8×*** importantly,it has an ultra-fast response time of 12µs and a remarkable specific detectivity of~1013 ***,an excellent DUV imaging capability has been identified based on the Gr/PtSe2/β-Ga_(2)O_(3)Schottky junction photodetector,demonstrating its great potential application in DUV imaging systems.

关键词： platinum diselenide β-Ga_(2)O_(3) solar-blind photodetectors deep ultraviolet imaging