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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot lasers

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Chinese Physics B 2019年第7期28卷 495-498页

作者： Hui-Ming Hao Xiang-Bin Su Jing Zhang Hai-Qiao Ni zhi-chuan niu State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100049 China

Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum *** optimizing the growth rate, high quality InAs/GaAs quantum dots have been *** areal quantum dot density is 5.9× 1010 cm-2, almost double the conventional density(3.0 × 1010 cm-2).Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot *** improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.

关键词： quantum dots growth rate dot density linewidth

Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission

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National Science Review 2017年第2期4卷 196-209页

作者： Ying Yu Guo-Wei Zha Xiang-Jun Shang Shuang Yang Ban-Quan Sun Hai-Qiao Ni zhi-chuan niu State Key laboratory for Superlattice and Microstructures Institute of SemiconductorsChinese Academy of Sciences State Key Laboratory of Optoelectronic Materials and Technologies School of electronics and information technologySun Yat-sen University College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Synergetic Innovation Center of Quantum Information& Quantum Physics University of Science and Technology of China

In this chapter, we discuss the epitaxial growth of self-assembled quantum dots(QDs) in GaAs nanowires(NWs) and the characteristics of their single-photon emissions. We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/Al GaAs core–shell NWs, branched GaAs NWs and tailored nanostructured morphologies on the NW facets. Particularly, we show two new types of QD-in-NW systems: one is a single InAs QD formed at the corner of a branched GaAs NW, and the other is a single GaAs QD formed on the NW facet. Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability. Furthermore, a single GaAs QD is achieved at the site of a single Al GaAs quantum ring(QR) on the NW facet. In addition, these NW-based single QDs are in-situ probed and integrated with single-mode optical ibers to achieve all-iber-output single-photon sources for potential application in quantum integrated networks.

关键词： self-assembled nanowires quantum dots single photon emitters molecular beam epitaxy

Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot

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Chinese Physics B 2018年第9期27卷 595-599页

作者： Ben Ma Si-Hang Wei Ze-Sheng Chen Xiang-Jun Shang Hai-Qiao Ni zhi-chuan niu State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 101418 China Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 China

Near-infrared single photon sources in telecommunication bands, especially at 1550 nm, are required for long-distance quantum communication. Here a down-conversion quantum interface is implemented, where the single photons emitted from single In As quantum dot at 864 nm is down converted to 1552 nm by using a fiber-coupled periodically poled lithium niobate（PPLN） waveguide and a 1.95 μmm pump laser, and the frequency conversion efficiency is ~40%. The singlephoton purity of quantum dot emission is preserved during the down-conversion process, i.e., g^（（2））（0）, only 0.22 at 1552 *** present technique advances the Ⅲ-Ⅴ semiconductor quantum dots as a promising platform for long-distance quantum communication.

关键词： quantum frequency down-conversion quantum dot telecommunication band single photon

Optical and electronic anisotropy of a 2D semiconductor SiP

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Nano Research 2022年第9期15卷 8579-8586页

作者： Shijun Hou Zhengfeng Guo Tao Xiong Xingang Wang Juehan Yang Yue-Yang Liu zhi-chuan niu Shiyuan Liu Bing Liu Shenqiang Zhai Honggang Gu Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100083China State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Joint Laboratory of Advanced Semiconductor Nanjing Guoke Semiconductor CO.Ltd.Nanjing 210008China

Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements,which is a very important and popular research direction at *** a IV-V two-dimensional material,silicon phosphide(SiP)has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy ***,the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy,and its electrical anisotropy is tested by SiP-based field-effect *** addition,the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring *** various measurements,SiP exhibits obvious anisotropy and good photoelectric *** work provides basic optical,electrical,and photoelectric performance information of SiP,and lays a foundation for further study of SiP and applications of SiP-based devices.

关键词： two-dimensional materials SiP optical anisotropy electrical anisotropy photoelectronic properties

High-performance midwavelength infrared detectors based on InAsSb nBn design

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Chinese Physics B 2020年第6期29卷 549-552页

作者： Xuan Zhang Qing-Xuan Jia Ju Sun Dong-Wei Jiang Guo-Wei Wang Ying-Qiang Xu zhi-chuan niu State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101408China Center of Materials Science and Optoelectronics Engineering College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China

we report n Bn photodetectors based on In As0.91 Sb0.09 with a 100% cut-off wavelength of 4.75 μm at 300 K. The band of an n Bn detector is similar to that of a standard pin detector, but there is special wide bandgap Al As0.08 Sb0.92 barrier layer in the n Bn detector, in which the depletion region of n Bn detector exists. The n Bn design has many advantages, such as low dark current and high quantum efficiency, because the n Bn design can suppress the generation–recombination(GR)current that is the main composition of standard pin detector dark current. The constant slope of the Arrhenius plot of J0–1/T indicates the absence of the generation–recombination dark current. We fabricate an n Bn detector with a quantum efficiency(QE) maximum of ~ 60% under-0.2-V bias voltage. The In As Sb n Bn detectors may be a competitive candidate for midwavelength infrared detector.

关键词： infrared detector InAsSb nBn

High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

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Chinese Physics B 2019年第3期28卷 386-390页

作者： zhi Jiang Yao-Yao Sun Chun-Yan Guo Yue-Xi Lv Hong-Yue Hao Dong-Wei Jiang Guo-Wei Wang Ying-Qiang Xu zhi-chuan niu State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice. The saturated responsivity was achieved under low bias voltage for both channels. The device could be operated as a single detector for sequential detection and showed high quantum efficiencies. The peak quantum efficiencies of long-wavelength infrared band-1(blue channel) and long-wavelength infrared band-2(red channel) were 44% at 6.3 μm under 20 mV and 57% at 9.1 μm under-60 mV, respectively. The optical performance for each channel was achieved using a 2 μm thickness absorber. Due to the high QE, the specific detectivities of the blue and red channels reached5.0×10^(11) cm·Hz^(1/2)/W at 6.8 μm and 3.1×10^(11) cm·Hz1^(1/2)/W at 9.1 μm, respectively, at 77 K.

关键词： infrared detector InAs/GaSb superlattice dual-color molecular beam epitaxy

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

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Chinese Physics B 2019年第3期28卷 175-179页

作者： Jin-Ming Shang Jian Feng Cheng-Ao Yang Sheng-Wen Xie Yi Zhang Cun-Zhu Tong Yu Zhang zhi-chuan niu State Key Laboratory for Superlattice and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083china Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China

The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.

关键词： semiconductor disk laser GaSb molecular beam epitaxy

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-Ⅱ In As/GaSb superlattice

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Chinese Physics B 2017年第1期26卷 563-567页

作者： Xi Han Wei Xiang Hong-Yue Hao Dong-Wei Jiang Yao-Yao Sun Guo-Wei Wang Ying-Qiang Xu zhi-chuan niu State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Synergetic Innovation Centre of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 China

A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.

关键词： very long wavelength infrared type-Ⅱ InAs/GaSb super-lattices(T2SLs) focal plane array

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

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Chinese Physics B 2018年第4期27卷 363-368页

作者： Jin-Lun Li Shao-Hui Cui Jian-Xing Xu Xiao-Ran Cui Chun-Yan Guo Ben Ma Hai-Qiao Ni zhi-chuan niu Department of Missile Engineering Shijiazhuang Campus Army Engineering University Shijiazhuang 050003 China State Key Laboratory for Superlattices Institute of Semiconductors Chinese Academy of Sciences （CAS） Beijing 100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100049 China Microsystem ＆ Terahertz Research Center China Academy of Engineering Physics Chengdu 610200 China Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory Xidian University Xi＇an 710071 China Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Sciences Xi＇ an Institute of Optics and Precision Mechanics Xi＇ an 710119 China

The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are *** samples are analyzed by the Hall measurements at 300 Kand 77 *** InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,*** THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability *** results provide a reference for the research and preparation of In P-based HEMT THz detectors.

关键词： THz detector high electron mobility transistor two-dimensional electron gas InP