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Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission

Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission

作     者:Ying Yu Guo-Wei Zha Xiang-Jun Shang Shuang Yang Ban-Quan Sun Hai-Qiao Ni Zhi-Chuan Niu 

作者机构:State Key laboratory for Superlattice and MicrostructuresInstitute of SemiconductorsChinese Academy of Sciences State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of electronics and information technologySun Yat-sen University College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of Sciences Synergetic Innovation Center of Quantum Information& Quantum PhysicsUniversity of Science and Technology of China 

出 版 物:《National Science Review》 (国家科学评论(英文版))

年 卷 期:2017年第4卷第2期

页      面:196-209页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:partially supported by the National Key Basic Research Program of China(2013CB933304) National Natural Science Foundation of China(91321313,61505196) Strategic Priority Research Program(B) of the Chinese Academy of Sciences(XDB0100200) 

主  题:self-assembled nanowires quantum dots single photon emitters molecular beam epitaxy 

摘      要:In this chapter, we discuss the epitaxial growth of self-assembled quantum dots(QDs) in GaAs nanowires(NWs) and the characteristics of their single-photon emissions. We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/Al GaAs core–shell NWs, branched GaAs NWs and tailored nanostructured morphologies on the NW facets. Particularly, we show two new types of QD-in-NW systems: one is a single InAs QD formed at the corner of a branched GaAs NW, and the other is a single GaAs QD formed on the NW facet. Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability. Furthermore, a single GaAs QD is achieved at the site of a single Al GaAs quantum ring(QR) on the NW facet. In addition, these NW-based single QDs are in-situ probed and integrated with single-mode optical ibers to achieve all-iber-output single-photon sources for potential application in quantum integrated networks.

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