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Chinese Physics Letters 2017年第9期34卷 87-90页

作者： Xiang-Mi zhan Quan wang Kun wang Wei Li Hong-Ling Xiao Chun Feng Li-Juan Jiang Cui-Mei wang Xiao-Liang wang zhan-guo wang Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083

As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen （CEA） threatens human health seriously ali over the globe. Fast electrical and highly sensitive detection of the CEA with A1GaN/GaN high electron mobility transistor is demonstrated experimentally. To achieve a low detection limit, the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody. The proposed aptasensor has successfully detected different concentrations （ranging from 50picogram/milliliter （pg/ml） to 50 nanogram/milliliter （ng/ml）） of CEA and achieved a detection limit as low as 50pg/ml at Vas = 0.5 V. The drain-source current shows a c/ear increase of 11.5μA under this bias.

关键词： CEA GaN Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor

Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors

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Chinese Physics Letters 2017年第4期34卷 75-78页

作者： Xiang-Mi zhan Mei-Lan Ha Quan wang Wei Li Hong-Ling Xiao[[ Chun Feng Li-Juan Jiang Cui-Mei wang[[ Xiao-Liang wang[[ zhan-guo wang Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 School of Microelectronics University of Chinese Academy of Sciences Beijing 100049 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 3 Department of Electro-mechanics Handan College Handan 05600

Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid （DNA） hybridization. The Au-gated AIInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current （VDS = 0.5 V） shows a clear decrease of 69μA upon the introduction of 1μmolL^-1 （μM） complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.

关键词： GaN In Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors

Recent progress in diamond-based MOSFETs

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International Journal of Minerals,Metallurgy and Materials 2019年第10期26卷 1195-1205页

作者： Xiao-lu Yuan Yu-ting Zheng Xiao-hua Zhu Jin-long Liu Jiang-wei Liu Cheng-ming Li Peng Jin zhan-guo wang Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083China Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Research Center for Functional Materials National Institute for Materials Science(NIMS)1-1 NamikiTsukubaIbaraki 305-0044Japan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are in- troduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.

关键词： diamond MOSFETs semiconductor carrier mobility doping

Tunable characteristic of phase-locked quantum cascade laser arrays

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Chinese Physics B 2021年第10期30卷 292-296页

作者： Zeng-Hui Gu Jin-Chuan zhang Huan wang Peng-Chang Yang Ning Zhuo Shen-Qiang Zhai Jun-Qi Liu Li-Jun wang Shu-Man Liu Feng-Qi Liu zhan-guo wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

A multimode interference(MMI)structure is designed to simplify the fabrication of quantum cascade laser(QCL)phase-locked *** MMI geometry is optimized with a sufficient output channel distance to accommodate conventional photolithography and wet etching process by which power amplifier array is fabricated without using the complicated two-step etching-regrowth or dry etching *** far-field pattern with periodically modulated peaks reveals that the beams from the arrays are ***,the frequency tuning performance of the MMI-based phase-locked arrays is studied using the Littrow-configuration external cavity structure.A wavelength tuning range of more than 60 cm^(−1) is demonstrated,which will eventually realize the high power,frequency tunable,large-scale phase-locked arrays,and their application in spectroscopy.

关键词： multimode interference(MMI) phase-locked quantum cascade laser(QCL) external cavity

Broad gain,continuous-wave operation of InP-based quantum cascade laser atλ~11.8μm

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Chinese Physics B 2021年第12期30卷 413-417页

作者： Huan wang Jin-Chuan zhang Feng-Min Cheng Zeng-Hui Gu Ning Zhuo Shen-Qiang Zhai Feng-Qi Liu Jun-Qi Liu Shu-Man Liu zhan-guo wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China

We demonstrate a broad gain,continuous-wave(CW)operation InP-based quantum cascade laser(QCL)emitting at 11.8μm with a modified dual-upper-state(DAU)and diagonal transition active region design.A 3 mm cavity length,16.5μm average ridge wide QCL with high-reflection(HR)coatings demonstrates a maximum peak power of 1.07 W at 283 K and CW output power of 60 m W at 293 *** device also shows a broad and dual-frequency lasing spectrum in pulsed mode and a maximum average power of 258.6 mW at 283 ***,the full width at half maximum(FWHM)of the electroluminescent spectrum measured at subthreshold current is 2.37μm,which indicates a broad gain spectrum of the *** tuning range of 1.38μm is obtained by a grating-coupled external cavity(EC)Littrow configuration,which is beneficial for gas detection.

关键词： dual-upper-state(DAU) quantum cascade lasers external cavity gas detection

Ammonia-induced CuO/13X for H_(2)S removal from simulated blast furnace gas at low temperature

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Green Energy & Environment 2025年第1期10卷 139-149页

作者： Erping Cao Yuhua Zheng Hao zhang Jianshan wang Yuran Li Tingyu Zhu zhan-guo zhang Guangwen Xu Yanbin Cui State Key Laboratory of Mesoscience and Engineering Institute of Process EngineeringChinese Academy of SciencesBeijing100190China State Key Laboratory of Vanadium and Titanium Resources Comprehensive Utilization PanGang Group Research Institute Co.Ltd.Panzhihua Sichuan617000China Shenyang University of Chemical Technology Shenyang110142China University of Chinese Academy of Sciences Beijing 100049China

Blast furnace gas(BFG)is an important by-product energy for the iron and steel industry and has been widely used for heating or electricity ***,the undesirable contaminants in BFG(especially H_(2)S)generate harmful environmental *** desulfurization of BFG is urgent for integrated steel plants due to the stringent ultra-low emission *** with other desulfurization materials,zeolite-based adsorbents represent a viable option with low costs and long service *** this study,an ammonia-induced CuO modified 13X adsorbent(NH3–CuO/13X)was prepared for H_(2)S removal from simulated BFG at low *** XRD,H_(2)-TPR and TEM analysis proved that smaller CuO particles were formed and the dispersion of Cu on the surface of 13X zeolite was improved via the induction of *** on H_(2)S adsorption performance of the adsorbent was carried out using simulated BFG,and the results showed that NH3–CuO/13X-3 has better breakthrough sulfur capacity,which was more than twice the sulfur capacity of CuO/*** is proposed that the enhanced desulfurization performance of NH3–CuO/13X is attributed to an abundant pore of 13X,and combined action of 13X and *** work provided an effective way to improve the sulfur capacity of zeolite-based adsorbents via impregnation method by ammonia induction.

关键词： Blast furnace gas Desulfurization Ammonia-induced CuO 13X zeolite

Near-infrared and mid-infrared semiconductor broadband light emitters

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Light(Science & Applications) 2017年第1期6卷 63-69页

作者： Chun-Cai Hou Hong-Mei Chen Jin-Chuan zhang Ning Zhuo Yuan-Qing Huang Richard A Hogg David TD Childs Ji-Qiang Ning zhan-guo wang Feng-Qi Liu Zi-Yang zhang Key Lab of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China School of Engineering The University of GlasgowGlasgow G128LTUK Vacuum Interconnected Nanotech Workstation Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

Semiconductor broadband light emitters have emerged as ideal and vital light sources for a range of biomedical sensing/imaging applications,especially for optical coherence tomography *** near-infrared broadband light emitters have found increasingly wide utilization in these imaging applications,the requirement to simultaneously achieve both a high spectral bandwidth and output power is still challenging for such *** to the relatively weak amplified spontaneous emission,as a consequence of the very short non-radiative carrier lifetime of the inter-subband transitions in quantum cascade structures,it is even more challenging to obtain desirable mid-infrared broadband light *** have been great efforts in the past 20 years to pursue high-efficiency broadband optical gain and very low reflectivity in waveguide structures,which are two key factors determining the performance of broadband light *** we describe the realization of a high continuous wave light power of 420 mW and broadband width of 4130 nm with near-infrared broadband light emitters and the first mid-infrared broadband light emitters operating under continuous wave mode at room temperature by employing a modulation p-doped InGaAs/GaAs quantum dot active region with a‘J’-shape ridge waveguide structure and a quantum cascade active region with a dual-end analogous monolithic integrated tapered waveguide structure,*** work is of great importance to improve the performance of existing near-infrared optical coherence tomography systems and describes a major advance toward reliable and costeffective mid-infrared imaging and sensing systems,which do not presently exist due to the lack of appropriate low-coherence mid-infrared semiconductor broadband light sources.

关键词： broadband light emitters optical coherence tomography quantum cascade structure quantum dot

Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

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Chinese Physics Letters 2019年第7期36卷 82-85页

作者： Xiao-di Xue Yu Liu Lai-pan Zhu Wei Huang Yang zhang Xiao-lin Zeng Jing Wu Bo Xu zhan-guo wang Yong-hai Chen Wei-feng zhang Henan Key Laboratory of Photovoltaic Materials Henan University Kaifeng 475004 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.

关键词： The spin-polarized photocurrent dependent spin transport applications and devices

Beam steering characteristics in high-power quantum-cascade lasers emitting at∼4.6µm

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Chinese Physics B 2021年第3期30卷 96-99页

作者： Yong-Qiang Sun Jin-Chuan zhang Feng-Min Cheng Chao Ning Ning Zhuo Shen-Qiang Zhai Feng-Qi Liu Jun-Qi Liu Shu-Man Liu zhan-guo wang Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China

A beam steering effect of high-power quantum cascade(QC) lasers emitting at 4.6 μm was investigated. The continuous wave(CW) output power of an uncoated, 6-mm-long, 7.5-μm-wide buried-heterostructure QC laser at 25℃ was as high as 854.2 m W. The maximum beam steering angle was offset by ±14.2° from the facet normal(0°) in pulsed mode. The phenomenon was judged explicitly by combining the diffraction limit theory and Fourier transform of the spectra. It was also verified by finite element method software simulation and the calculation of two-dimensional(2 D)effective-index model. The observed steering is consistent with a theory for coherence between the two lowest order lateral modes. Therefore, we have established an intrinsic linkage between the spectral instabilities and the beam steering by using the Fourier transform of the spectra, and further presented an extremely valid method to judge the beam steering. The content of this method includes both three equidistant peak positions in the Fourier transform of the spectra and the beam quality located between once the diffraction limit(DL) and twice the DL.

关键词： beam steering quantum cascade lasers fourier transform of the spectra 2D effective-index model

Investigation of Ga_(2)O_(3)/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

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Chinese Physics B 2023年第10期32卷 716-723页

作者：许敦洲金鹏徐鹏飞冯梦阳吴巨王占国 Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Physics and Technology Wuhan UniversityWuhan 430072China

A Ga_(2)O_(3)/diamond separate absorption and multiplication avalanche photodiode(SAM-APD)with mesa structure has been proposed and *** simulation is based on an optimized Ga_(2)O_(3)/diamond heterostructure TCAD physical model,which is revised by repeated comparison with the experimental data from the *** both Ga_(2)O_(3)and diamond are ultra-wide bandgap semiconductor materials,the Ga_(2)O_(3)/diamond SAM-APD shows good solar-blind detection ability,and the corresponding cutoff wavelength is about 263 *** doping distribution and the electric field distribution of the SAM-APD are discussed,and the simulation results show that the gain of the designed device can reach 5×10^(4)and the peak responsivity can reach a value as high as 78 A/W.

关键词： Ga_(2)O_(3) diamond separate absorption and multiplication avalanche photodiode(SAM-APD) solar-blind detector