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High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

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Science Bulletin 2012年第Z1期 135-148页

作者： zhang zhiyong**,wang sheng & peng lianmao key laboratory for the physics and chemistry of nanodevices and department of electronics,Peking University,{2.,{3.

Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or *** n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and *** CNT FETs outperformed n-type Si metal-oxide-semiconductor(MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS *** with the demonstration of ballistic p-type CNT FETs using Pd contacts,this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor(CMOS) devices and integrated *** full advantage of the perfectly symmetric band structure of the semiconductor SWCNT,a perfect SWCNT-based CMOS inverter was demonstrated,which had a voltage gain of over *** adjacent n-and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons(3.00 cm2.V-1 s-1) and holes(3.00 cm2.V-1 s-1).The CNT FETs also had excellent potential for high-frequency applications,such as a high-performance frequency doubler.

关键词： carbon nanotube field-effect transistor doping-free complementary metal-oxide-semiconductor high frequency

Doping-free carbon nanotube optoelectronic devices

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Science Bulletin 2012年第Z1期 149-156页

作者： wang sheng*,{2. & {3. lianmao* key laboratory for the physics and chemistry of nanodevices,department of electronics,Peking University,{12.,{13.

Semiconducting carbon nanotubes(CNTs) possess outstanding electrical and optical properties because of their special one-dimen-sional(1D) *** are direct bandgap materials,which makes them ideal for use in optoelectronic devices,*** emitters and light *** determine their light absorption and light emission processes due to the strong Coulomb interactions between electrons and holes in *** this paper,we review recent progress in CNT photodetectors,photovoltaic devices and light *** particular,we focus on the doping-free CNT optoelectronic devices developed by our group in recent years.

关键词： carbon nanotube diode photodetector LED solar cell doping-free

Doping-free carbon nanotube optoelectronic devices

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Chinese Science Bulletin 2012年第2期57卷 149-156页

作者： wang sheng {2. {3. lianmao key laboratory for the {2. and {3. of nanodevices Department of ElectronicsPeking UniversityBeijing 100871China

关键词：半导体碳纳米管光电器件兴奋剂库仑相互作用光探测器光发射器光电设备光学性能

High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

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Chinese Science Bulletin 2012年第2期57卷 135-148页

作者： zhang zhiyong* wang {2. {3. lianmao key laboratory for the {2. and {3. of nanodevices and department of electronics Peking UniversityBeijing 100871China

关键词：单壁碳纳米管 CMOS器件集成电路制造互补金属氧化物半导体兴奋剂性能 MOS场效应管场效应晶体管

Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow

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Nano Research 2024年第8期17卷 7557-7566页

作者： Minghui Yin Haitao Xu Yunxia You Ningfei Gao Weihua zhang Hongwei Liu Huanhuan Zhou Chen wang Lian-Mao {2. Zhiqiang Li Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China beijing Hua Tan Yuan Xin electronics Technology Co. Ltd.Beijing 101399China Institute of Carbon-based Thin Film electronics Peking UniversityShanxi 030012China key laboratory for the {2. and {3. of nanodevices and Center for Carbon-based electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3.m carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3.m-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3.m-CNTFETs-PDK features a contacted gate pitch(CGP)of 2.μm,a gate density of 12. gates/mm^(2.,and a transistor density of 554 transistors/mm^(2.,with an intrinsic gate delay around 13. *** of the 3.m-CNTFETs-PDK was achieved through the successful design and tape-out of 153.standard cells and 3.3.stage ring oscillator *** the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,12..1μW,3.95μm×2.10μ*** research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)

Speeding up carbon nanotube integrated circuits through three-dimensional architecture

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Nano Research 2019年第8期12卷 1810-1816页

作者： Yunong Xie zhiyong zhang Donglai Zhong {2. {3. key laboratory for the {2. and {3. of nanodevices and department of electronics Peking UniversityBeijing 100871China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China

Semiconducting carbon nanotube (CNT) field effect transistor (FET) is attractive for constructing three-dimensional (3.) integrated circuits (ICs) because of its low-temperature processes and low power dissipation. However, CNT based 3. ICs reported usually suffered from lower performance than that of monolayer CNT ICs. In this work, we develop a 3. IC technology through integrating multi-layer high performance CNT film FETs into one chip, and show that it promotes the operation speed of CNT based 3. ICs considerably. We also explore the advantage on ICs of 3. architecture, which brings 3.% improvement on speed over two-dimensional (2.) one. Specially, we demonstrate the fabrication of 3. five-stage ring-oscillator circuits with an oscillation frequency of up to 680 MHz and stage delay of 0.15 ns, which represents the highest speed of 3. CNT-based ICs.

关键词： carbon nanotube nanoelectronics field-effect transistors three-dimensional (3.) integrated circuits ring oscillator

10B-doped MCP detector developed for neutron resonance imaging at Back-n white neutron source

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Nuclear Science and Techniques 2024年第8期35卷 58-68页

作者： Qiang Li Li‑Jiao wang Jing‑Yu Tang Xiang‑Biao Qiu Zhen Chen Mao‑Yuan Zhao Chang‑Jun Ning Kai Pan Wei Xu Tao Li Su‑peng Lu Han Yi Rui‑Rui Fan Chang‑Qing Feng Rong {2. Xiao‑Yang Sun Qi An Hao‑Fan Bai Jiang‑Bo Bai Jie Bao Ping Cao Qi‑Ping Chen Yong‑Hao Chen Zeng‑Qi Cui An‑Chuan Fan Fan‑Zhen Feng Min‑Hao Gu Chang‑Cai Han Zi‑Jie Han Guo‑Zhu He Yong‑Cheng He Yang Hong Yi‑Wei Hu Han‑Xiong Huang Wei Jiang Zhi‑Jie Jiang Zheng‑Yao Jin Ling Kang Bo Li Gong Li Xiao Li Yang Li Jie Liu Rong Liu Shu‑Bin Liu Yi‑Na Liu Guang‑Yuan Luan Jie Ren Zhi‑Zhou Ren Xi‑Chao Ruan Zhao‑Hui Song Kang Sun Zhi‑Xin Tan {3.‑Da Tang Jin‑Cheng wang peng‑Cheng wang Zhao‑Hui wang Zhong‑Wei Wen Xiao‑Guang Wu Xuan Wu Cong Xia Yong‑Ji Yu Guo‑Hui {2. Hang‑Chang {2. Lin‑Hao {2. Qi‑Wei {2. Xian‑peng {2. Yu‑Liang {2. Yue {2. Zhi‑Yong {2. Zhi‑Hao Zhou Ke‑Jun Zhu Chong Zou Institute of High Energy physics Chinese Academy of Sciences(CAS)Beijing 100049China Spallation Neutron Source Science Center Dongguan 523803China State key laboratory of Particle Detection and {2. Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Dongguan Songshan Lake Future School Dongguan 523808China School of Nuclear Science and Technology University of Science and Technology of ChinaHefei 230027China State key laboratory of Particle Detection and {2. University of Science and Technology of ChinaHefei 230026China North Night Vision Science and Technology(Nanjing)Research Institute Co.Ltd Nanjing 211106China department of Modern physics University of Science and Technology of ChinaHefei 230026China State key laboratory of Nuclear {2. and Technology School of PhysicsPeking UniversityBeijing 100871China Institute of Modern physics Fudan UniversityShanghai 200433China key laboratory of Nuclear Data China Institute of Atomic EnergyBeijing 102413China china Academy of Engineering physics Institute of Nuclear Physics and ChemistryMianyang 621900China USTC archaeometry lab University of Science and Technology of ChinaHefei 230026China Northwest Institute of Nuclear Technology Xi’an 710024China University of Chinese Academy of Sciences Beijing 100049China china Shipbuilding Trading Co. LtdBeijing 100044China

Neutron resonance imaging(NRI)has recently emerged as an appealing technique for neutron *** complexity surpasses that of conventional transmission imaging,as it requires a high demand for both a neutron source and ***,the progression of NRI technology has been sluggish since its inception in the 1980s,particularly considering the limited studies analyzing the neutron energy range above *** white neutron source(Back-n)at the china Spallation Neutron Source(CSNS)provides favorable beam conditions for the development of the NRI technique over a wide neutron energy range from eV to ***-sensitive microchannel plates(MCP)have emerged as a cutting-edge tool in the field of neutron detection owing to their high temporal and spatial resolutions,high detection efficiency,and low *** this study,we report the development of a 10B-doped MCP detector,along with its associated electronics,data processing system,and NRI experiments at the *** heavy elements such as gold,silver,tungsten,and indium can be easily identified in the transmission images by their characteristic resonance peaks in the 1–100 eV energy range;the more difficult medium-weight elements such as iron,copper,and aluminum with resonance peaks in the 1–100 keV energy range can also be *** particular,results in the neutron energy range of dozens of keV(Aluminum)are reported here for the first time.

关键词： Neutron resonance imaging 10B doped MCP detector White neutron source Sample nuclide identification

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Graphene-based ambipolar electronics for radio frequency applications

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Chinese Science Bulletin 2012年第23期57卷 2956-2970页

作者： wang ZhenXing zhang zhiyong* {2. {3. key laboratory for the {2. and {3. of nanodevices and department of electronics Peking University Beijing 100871 China

Graphene is considered as a promising material to construct field-effect transistors (FETs) for high frequency electronic applications due to its unique structure and properties,mainly including extremely high carrier mobility and saturation velocity,the ultimate thinnest body and *** continuously scaling down the gate length and optimizing the structure,the cut-off frequency of graphene FET (GFET) was rapidly increased and up to about 3.0 GHz,and further improvements are also *** of the lack of an intrinsic band gap,the GFETs present typical ambipolar transfer characteristic without off state,which means GFETs are suitable for analog electronics rather than digital *** advantage of the ambipolar characteristic,GFET is demonstrated as an excellent building block for ambipolar electronic circuits,and has been used in applications such as highperformance frequency doublers,radio frequency mixers,digital modulators,and phase detectors.

关键词： graphene radio frequency field-effect transistor ambipolar electronics high-κ dielectrics

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Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage

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Nano Research 2020年第7期13卷 1875-1881页

作者： Lijun Liu Chenyi Zhao Li Ding lianmao peng {2. {3. key laboratory far the {2. and {3. of nanodevices and department of electronics Peking UniversityBeijing 100871China

A small bandgap and light carrier effective mass(mo)lead to obv ous ambipolar transport behavior in carbon nanotube(CNT)fild-effect transistors(FE Ts),including a high off-state current and severe degradation of the subthreshold swing(SS)with increasing drain bias *** demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-μum channel length,i.e.,suppressing the ambipolar behavion while maintaining high on-state performance by adopting a feedback gate(FBG)structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling ***-400-nm-channel-length FETs with a FBG structure statistially present a high on/off ratio of up to 10*and a sub-2.0 mV/dec SS under a high drain bias of up to-2.V whle maintaining a high on-state current of 0.2.mA/μm or a peak transconductance of 0.2.mS/*** lowering the supply voltage to 1.5 V,FBG CNT-fim FETs can meet the requirement of standard-pertormance ultra large scale integrated circuits(ULSICs).Therefore,the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property.

关键词： carbon nanotube field-effect transistor current leakage subthreshold swing small bandgap semiconductor