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Effect of reactor pressure on the growth rate and structural properties of GaN films

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Chinese Science Bulletin 2009年第15期54卷 2595-2598页

作者： NI JinYu HAO Yue zhang jincheng YANG LinAn Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an710071 China

The effect of reactor pressure on the growth rate, surface morphology and crystalline quality of GaN films grown on sapphire by metalorganic chemical vapor deposition is studied. The results show that as the reactor pressure increases from 2500 to 20000 Pa, the GaN surface becomes rough and the growth rate of GaN films decreases. The rough surface morphology is associated with the initial high temperature GaN islands, which are large with low density due to low adatom surface diffusion under high reactor pressure. These islands prolong the occurrence of 2D growth mode and decrease the growth rate of GaN film. Meanwhile, the large GaN islands with low density lead to the reduction of threading dislocation density during subsequent island growth and coalescence, and consequently decrease the full width at half maximum of X-ray rocking curve of the GaN film.

关键词： GaN薄膜增长速度压力上升反应器结构特性金属有机物化学气相沉积表面形貌原子表面扩散

Small-signal switch model of GaN HEMTs for MMIC applications

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The Journal of China Universities of Posts and Telecommunications 2016年第5期23卷 56-60页

作者： Du Lin Yang Xiaofeng Li Yang zhang jincheng Hao Yue Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education Xidian University School of Electronic Engineering Xi’an University of Posts and Telecommunications

Gallium nitride （GaN） high electron mobility transistor （HEMT） with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 x 125 gm gate width is fabricated to verify the model, which can be treated as a single pole single throw （SPST） switch due to the ON state and OFF state. The measurement results show a lzood agreement with the simulation results, which demonstrates the effectiveness of the proposed model.

关键词： GaN HEMT switch model symmetrical structure MMIC

Superior Pseudocapacitive Storage of a Novel Ni3Si2/ NiOOH/Graphene Nanostructure for an All‑Solid‑State Supercapacitor

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Nano-Micro Letters 2021年第1期13卷 15-28页

作者： Jing Ning Maoyang Xia Dong Wang Xin Feng Hong Zhou jincheng zhang Yue Hao The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Xidian UniversityXi’an 710071People’s Republic of China Shaanxi Joint Key Laboratory of Graphene Xidian UniversityXi’an 710071People’s Republic of China

Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures,doping of thin films,and mechanisms for the construction of threedimensional ***,we synthesize creeper-like Ni3Si2/NiOOH/graphene nanostructures via low-pressure all-solid meltingreconstruction chemical vapor *** a carbon-rich atmosphere,high-energy atoms bombard the Ni and Si surface,and reduce the free energy in the thermodynamic equilibrium of solid Ni–Si particles,considerably catalyzing the growth of Ni–Si *** controlling the carbon source content,a Ni3Si2 single crystal with high crystallinity and good homogeneity is stably *** measurements indicate that the nanostructures exhibit an ultrahigh specific capacity of 835.3 C g^−1(1193.28 F g^−1)at 1 A g^−1;when integrated as an all-solidstate supercapacitor,it provides a remarkable energy density as high as 25.9 Wh kg^−1 at 750 W kg^−1,which can be attributed to the freestanding Ni3Si2/graphene skeleton providing a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution,thereby accelerating the electron exchange *** growth of the high-performance composite nanostructure is simple and controllable,enabling the large-scale production and application of microenergy storage devices.

关键词： Pseudocapacitive storage Creeper-like Ni3Si2 NiOOH Graphene All-solid-state supercapacitors

2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity

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Science China(Information Sciences) 2023年第6期66卷 309-310页

作者： Ren HUANG Weihang zhang jincheng zhang Chunxu SU Xi LIU Liyu FU Yue HAO Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Wide Bandgap Semiconductor Innovation Center of Guangzhou Guangzhou Institute of TechnologyXidian University

The GaN on Si technology is attractive for power electronic systems owing to its low cost and large wafer size [1]. GaN Schottky barrier diodes(SBDs) on Si substrates have been extensively studied due to their superio...

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Recent progress of electrochemical reduction of CO_(2)by single atom catalysts

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Materials Reports(Energy) 2022年第3期2卷 3-21页

作者： Tian Wang jincheng zhang Fuhua Li Bin Liu Sibudjing Kawi Department of Chemical&Biomolecular Engineering National University of Singapore117585Singapore School of Chemical and Biomedical Engineering Nanyang Technological University637459Singapore

Powered by electricity from renewable energies,electrochemical reduction of CO_(2)could not only efficiently alleviate the excess emission of CO_(2),but also produce many kinds of valuable chemical *** various catalysts,single atom catalysts(SACs)have attracted much attention due to their high atom utilization efficiency and expressive catalytic ***,SACs serve as an ideal platform for the investigation of complex reaction pathways and mechanisms thanks to their explicit active *** this review,the possible re-action pathways for the generation of various products(mainly C1 products for SACs)were firstly ***,recent progress of SACs for electrochemical reduction of CO_(2)was discussed in aspect of different central metal *** the most popular and efficient coordination modulation strategy,introducing heteroatom was then ***,as an extension of SACs,the development of dual atom catalysts was also briefly *** last,some issues and challenges regarding the SACs for CO_(2)reduction reaction(CO_(2)RR)were listed,followed by corresponding suggestions.

关键词： Single atom catalysts CO_(2)reduction reaction Reaction pathways Coordination modulation Dual atom catalysts

Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

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Science China(Technological Sciences) 2008年第6期51卷 784-789页

作者： HAO Yue WANG Chong NI JinYu FENG Qian zhang jincheng MAO Wei Institute of Microelectronics Xidian Universityand Key Lab of Wide Band Gap Semiconductor Materials and DevicesXi’an 710071China

Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported. These devices with 1 μm gate-length, 10 nm recessed-gate depth, 4 μm distance of source and drain exhibit a maximum drain current of 233 mA/mm at 1.5 V, a maximum transconductance of 210 mS/mm, and a threshold voltage of 0.12 V. The threshold voltage of these devices increased to 0.53 V after 500°C 5 min annealing in N2 ambient. The saturation drain current and transconductance of 15 nm recessed-gate depth reduced compared to those of 10 nm recessed-gate depth, but the threshold voltage increased to 0.47 V. The relations between threshold voltage, controlling ability of gate and recess depth were validated by testing C-V structures on AlGaN/GaN heterostructures with different etching depth.

关键词： enhacement-mode high electron mobility transistors AlGaN/GaN recessed-gate threshold voltage

Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells

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Research 2024年第2期2023卷 181-190页

作者： Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi jincheng zhang Chunfu zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi 710071China Xi'an Baoxin Solar Technology Co. Ltd.Xi'an710071China

Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar *** this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 *** excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive *** is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier ***,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar *** findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

关键词： perovskite Graded Highly

Investigation of performance-enhanced GaN-based E-mode pchannel MOSFET with pre-ohmic-annealing treatment

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Journal of Semiconductors 2024年第11期45卷 63-68页

作者： Huake Su Tao zhang Shengrui Xu Hongchang Tao Yibo Wang Yuan Gao Yue Hao jincheng zhang State Key Laboratory of Wide-bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO) Chinese Academy of SciencesSuzhou 215123China

Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet *** contact resistance(Rc)extracted by transfer length method reduced from 38 to 23Ω·mm with alleviated contact barrier height from 0.55 to 0.51 eV after POA treatment.X-ray photoelectron spectroscopy and Hall measurement confirmed that POA treatment was able to reduce surface state density and improve the hole concentration of *** to the decreased Rc and improved two-dimensional hole gas(2DHG)density,an outstanding-performance GaN E-mode p-channel MOSFET was successfully realized.

关键词： POA treatment GaN p-channel E-Mode barrier height surface states

Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate

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Science China(Physics,Mechanics & Astronomy) 2012年第12期55卷 2383-2388页

作者： WANG DangHui ZHOU Hao zhang jincheng XU ShengRui zhang LinXia MENG FanNa AI Shan HAO Yue State Key Lab.of Fundamental Science on Wide Band-Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China School of Materials Science and Engineering of Xi'an ShiYou University Xi'an 710065China

In this study,the thick AlGaN epilayers have been grown on the c-plane sapphire substrate and the free-standing GaN substrate using low-temperature AlN nucleation layers by low-pressure metal-organic chemical vapor deposition(LPMOCVD).High resolution X-ray diffraction(HRXRD),atom force microscopy(AFM),scanning electron microscopy(SEM),photoluminescence(PL) and Raman scattering measurements have been employed to study the crystal quality,threading dislocation density,surface morphology,optical properties and phonon properties of thick AlGaN *** results indicate that AlGaN epifilms crystal quality can be improved greatly when grown on the free-standing GaN *** calculated the threading dislocation density and found that thick AlGaN epifilm grown on the free-standing GaN substrate is much lower in total threading dislocation density than that grown on the sapphire substrate,although the surface morphology is rougher than that of sapphire substrate.

关键词： metal-organic chemical vapor deposition crystal quality surface morphology AlN nucleation layer