Impact of strain relaxation of AlGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT

作     者：YANG Yan HAO Yue ZHANG Jincheng WANG Chong FENG Qian 

作者机构：Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian UniversityXi'an 710071China 

出 版 物：《Science China(Technological Sciences)》 (中国科学(技术科学英文版))

年 卷 期：2006年第49卷第4期

页      面：393-399页

核心收录：

学科分类：08[工学] 0802[工学-机械工程] 

基　　金：This work was supported by the National Key Basic Research and Development Program(Grant No.51327020301) the National Defense Key Pre-Research.Program(Grant No.41308060106) 

主　　题：AlGaN/GaN high electron mobility transistor strain relaxation 

摘      要：The effects of strain relaxation of AlGaN barrier layer on the conduction band profile,electron concentration and two-dimensional gas(2DEG)sheet charge density in a high Al-content AlGaN/GaN high electron mobility transistor(HEMT)are calculated by self-consistently solving Poisson’s and Schr?dinger’s *** effect of strain re-laxation on dc I-V characteristics of Al_(x)Ga_(1-x)N/GaN HEMT is obtained by developing a nonlinear charge-control model that describes the accurate relation of 2DEG sheet charge density and gate *** model predicts a highest 2DEG sheet charge density of 2.42×10^(13)cm^(-2)and maximum saturation current of 2482.8 mA/mm at a gate bias of 2 V for 0.7μm Al_(0.5)0Ga_(0.50)N/GaN HEMT with strain relaxation r=0 and 1.49×10^(13)cm^(-2)and 1149.7 mA/mm with strain relaxation r=*** comparison between simulations and physical measurements shows a good *** show that the effect of strain relaxation must be considered when analyzing the characteristics of high Al-content AlGaN/GaN HEMT theoretically,and the performance of the devices is improved by decreasing the strain relaxation of AlGaN barrier layer.