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Selective and localized laser annealing effect for high- performance flexible multilayer MoS2 thin-film transistors

Nano Research 2014年第8期7卷 1137-1145页

作者： Hyukjun Kwon Woong Choi Daeho lee yunsung lee Junyeon Kwon Byungwook Yoo Costas P. Grigoropoulos Sunkook Kim Department of Mechanical Engineering University of California Berkeley CA 94720-1740 USA School of Advanced Materials Engineering Kookmin University Seoul 136-702 South Korea Department of Mechanical Engineering 6achon University Seongnam-si Gyeonggi 461-701 South Korea Department of Electronics and Radio Engineering Kyung Hee University Gyeonggi 446-70 I South Korea Flexible Display Research Center Korea Electronics Technology Institute Seongnam Gyeonggi 463-816 South Korea

We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors （FETs） on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly（ethylene naphthalate）（PEN） substrates with low thermal budget （〈 200 ℃）. The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility （from 24.84 to 44.84 cm2-V-l.s-1）, increased output resistance （0.42 MΩ at Vgs- Vth = 20 V, a three-fold increase）, a six-fold increase in the self-gain, and decreased sub- threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semicon- ductor FETs in flexible electronics.

关键词： transition metaldichalcogenides MoS2 laser annealingythin-film transistors flexible electronics

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Formation of sub-100-nm suspended nanowires with various materials using thermally adjusted electrospun nanofibers as templates

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Microsystems & Nanoengineering 2023年第1期9卷 263-270页

作者： Yongkeun Oh Dae-Sung Kwon Eunhwan Jo yunsung Kang Sangjun Sim Jongbaeg Kim School of Mechanical Engineering Yonsei UniversitySeoul03722Republic of Korea

The air suspension and location specification properties of nanowires are crucial factors for optimizing nanowires in electronic devices and suppressing undesirable interactions with *** various strategies have been proposed to fabricate suspended nanowires,placing a nanowire in desired microstructures without material constraints or high-temperature processes remains a *** this study,suspended nanowires were formed using a thermally aggregated electrospun polymer as a *** elaborately designed microstructure enables an electrospun fiber template to be formed at the desired location during thermal ***,the desired thickness of the nanowires is easily controlled with the electrospun fiber templates,resulting in the parallel formation of suspended nanowires that are less than 100 nm ***,this approach facilitates the formation of suspended nanowires with various *** is accomplished by evaporating various materials onto the electrospun fiber template and by removing the ***,copper,tungsten oxide(WO3),and tin oxide nanowires are formed as examples to demonstrate the advantage of this approach in terms of nanowire material ***(H2)and nitrogen dioxide(NO2)gas sensors comprising palladium and tungsten oxide,respectively,are demonstrated as exemplary devices of the proposed method.

关键词： nanowires template fibers

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