Selective and localized laser annealing effect for high- performance flexible multilayer MoS2 thin-film transistors

作     者：Hyukjun Kwon Woong Choi Daeho Lee Yunsung Lee Junyeon Kwon Byungwook Yoo Costas P. Grigoropoulos Sunkook Kim 

作者机构：Department of Mechanical Engineering University of California Berkeley CA 94720-1740 USA School of Advanced Materials Engineering Kookmin University Seoul 136-702 South Korea Department of Mechanical Engineering 6achon University Seongnam-si Gyeonggi 461-701 South Korea Department of Electronics and Radio Engineering Kyung Hee University Gyeonggi 446-70 I South Korea Flexible Display Research Center Korea Electronics Technology Institute Seongnam Gyeonggi 463-816 South Korea 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2014年第7卷第8期

页      面：1137-1145页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Research Foundation of Korea from Kyung Hee University, and the Industrial Strategic Technology Development Program the US Air Force Office of Scientific Research AFOSR/AOARD under Grant support of the New Faculty Research Program 2012 of Kookmin University in Korea and the National Research Foundation of Korea 

主　　题：激光退火 薄膜晶体管 MoS2 柔性 性能 退火效应 透射电子显微镜分析 场效应晶体管 

摘      要：We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly(ethylene naphthalate) (PEN) substrates with low thermal budget ( 200 °C). The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility (from 24.84 to 44.84 cm2·V−1·s−1), increased output resistance (0.42 MΩ at V gs − V th = 20 V, a three-fold increase), a six-fold increase in the self-gain, and decreased sub-threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semiconductor FETs in flexible electronics.