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Defect Engineering in Earth-Abundant Cu_(2)ZnSnSe_(4) Absorber Using Efficient Alkali Doping for Flexible and Tandem Solar Cell Applications

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Energy & Environmental Materials 2024年第2期7卷 249-256页

作者： Muhammad Rehan Ara Cho Inyoung j.ong Kihwan Kim Asmat Ullah j.n-Sik Cho j.o Hyung Park yunae j. Sung j.n Hong Seung Kyu Ahn Sej.n Ahn j.e Ho Yun j.hye Gwak Donghyeop Shin Photovoltaics Research Department Korea Institute of Energy Research(KIER)152-Gajeong-roYuseong-guDaejeon 34129Korea Department of Renewable Energy Engineering University of Science and Technology(UST)217-Gajeong-roYuseong-guDaejeon 34113Korea Korea Institute of Energy Technology(KENTECH) 50772 Ujeong-roNaju Jeonnam 58217Korea

To demonstrate flexible and tandem device applications,a low-temperature Cu_(2)ZnSnSe_(4)(CZTSe)deposition process,combined with efficient alkali doping,was ***,high-quality CZTSe films were grown at 480℃by a single co-evaporation,which is applicable to polyimide(PI)*** of the alkali-free substrate,Na and K alkali doping were systematically studied and optimized to precisely control the alkali distribution in *** bulk defect density was significantly reduced by suppression of deep acceptor states after the(NaF+KF)*** the low-temperature deposition with(NaF+KF)PDTs,the CZTSe device on glass yields the best efficiency of 8.1%with an improved Voc deficit of 646 *** developed deposition technologies have been applied to *** the first time,we report the highest efficiency of 6.92%for flexible CZTSe solar cells on ***,CZTSe devices were utilized as bottom cells to fabricate four-terminal CZTSe/perovskite tandem cells because of a low bandgap of CZTSe(~1.0 eV)so that the tandem cell yielded an efficiency of 20%.The obtained results show that CZTSe solar cells prepared by a low-temperature process with in-situ alkali doping can be utilized for flexible thin-film solar cells as well as tandem device applications.

关键词： alkali doping Earth-abundant Cu_(2)ZnSnSe_(4) flexible solar cells four-terminal tandem cells low-temperature process

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Vertical plane depth-resolved surface potential and carrier separation characteristics in flexible CZTSSe solar cells with over 12% efficiency

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Carbon Energy 2024年第3期6卷 36-52页

作者： Dae-Ho Son Ha Kyung Park Dae-Hwan Kim j.n-Kyu Kang Shi-j.on Sung Dae-Kue Hwang j.ebaek Lee Dong-Hwan j.on yunae Cho William j. Taeseon Lee j.nHo Kim Sang-Hoon Nam Kee-j.ong Yang Division of Energy Technology DGISTDaeguRepublic of Korea Research Center for Thin Film Solar Cells DGISTDaeguRepublic of Korea Department of Physics Ewha Womans UniversitySeoulRepublic of Korea Department of Physics Incheon National UniversityIncheonRepublic of Korea Department of Mechanical Engineering Massachusetts Institute of TechnologyCambridgeMassachusettsUSA

Cu2ZnSn(S,Se)4(CZTSSe)solar cells have resource distribution and economic *** main cause of their low efficiency is carrier loss resulting from recombination of photo-generated electron and *** overcome this,it is important to understand their electron-hole behavior *** determine the carrier separation characteristics,we measured the surface potential and the local current in terms of the absorber *** elemental variation in the intragrains(IGs)and at the grain boundaries(GBs)caused a band edge shift and bandgap(Eg)*** the absorber surface and subsurface,an upward Ec and Ev band bending structure was observed at the GBs,and the carrier separation was *** the absorber center,both upward Ec and Ev and downward Ec-upward Ev band bending structures were observed at the GBs,and the carrier separation was *** improve the carrier separation and suppress carrier recombination,an upward Ec and Ev band bending structure at the GBs is desirable.

关键词： carrier separation CZTSSe flexible solar cell local current surface potential

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Flexible kesterite thin-film solar cells under stress

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npj.Flexible Electronics 2022年第1期6卷 863-870页

作者： Ha Kyung Park yunae Cho j.ran Kim Sammi Kim Sungj.n Kim j.ha Kim Kee-j.ong Yang Dae-Hwan Kim j.n-Kyu Kang William j. Department of Physics Ewha Womans UniversitySeoul 03760Republic of Korea Division of Energy Technology Daegu Gyeongbuk Institute of Science and Technology(DGIST)Daegu 42988Republic of Korea Department of Solar&Energy Engineering Cheongju UniversityCheongju 28503Republic of Korea

Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat ***,we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4(CZTSSe)photovoltaic devices under mechanical *** efficient flexible CZTSSe devices were fabricated controlling the Na *** electronic structure of CZTSSe was deformed with stress as the band gap,valence band edge,and work function *** properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without *** local open-circuit voltage(VOC)on the bent CZTSSe surface decreased due to limited carrier *** reduction of local VOC occurred larger with convex bending than in concave bending,which is consistent with the degradation of device *** study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.

关键词： optoelectronic stress bending

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