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Preparation of CuInSe_2 thin films by paste coating

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Rare Metals 2008年第6期27卷 591-597页

作者： NIE Hongbo wang yanlai NI Peiran GUO Shiju School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China WuxiASICMicro Electronics Co. Ltd Wuxi 214028 China

Precursor pastes were obtained by milling Cu-In alloys and Se powders. CulnSe2 thin films were successfully prepared by precursor layers, which were coated using these pastes, and were annealed in a H2 atmosphere. The pastes were tested by laser particle diameter analyzer, simultaneous thermogravimetric and differential thermal analysis instruments （TG-DTA）, and X-ray diffractometry （XRD）. Selenized films were characterized by XRD, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicate that chalcopyrite CuInSe2 is formed at 180℃ and the crystallinity of this phase is improved as the temperature rises. All the CuInSe2 thin films, which were annealed at various temperatures, exhibit the preferred orientation along the （112） plane. The compression of precursor layers before selenization step is one of the most essential factors for the preparation of perfect CuInSe2 thin films.

关键词： inorganic non-metal material CulnSe2 thin films selenization coating Cu-In alloys

Preparation of CuInSe_2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

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Rare Metals 2010年第5期29卷 519-523页

作者： wang yanlai NIE Hongbo GUO Shiju Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongofia Autonomous Region School of Physical Science and Technology lnnerMongolia University Hohhot 010021 China China National R＆D Center for Tungsten Technology .Yiamen 361006 China School of Materials Science andEngineering University of Science and Technology Belting Beifing 100083 China

The CulnSe2 compound was prepared by selenization of Cu-In precursor, which was ultrasonic electrodeposited at constant current. CulnSe2 films were compacted to improve surface morphology. The films were characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. It is indicated that ideal stoichiometrie CulnSe2 films can be obtained by the selenization of Cu-In precursor deposited at a current density of 20 mA/cm^2. Single-phase CulnSe2 is formed in the selenization proeess, and it exhibits preferred orientation along the （112） plane. The CulnSe2 films with smooth surface can be obtained under the pressure of 500 MPa at 60℃.

关键词： photovoltaic cells CulnSe2 thin films electrodeposition selenization compaction

硒化Cu,In双层膜制备CuInSe_2薄膜

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太阳能学报 2011年第7期32卷 969-973页

作者：王延来果世驹内蒙古大学物理科学与技术学院内蒙古自治区高等学校半导体光伏技术重点实验室呼和浩特010021 北京科技大学粉末冶金研究所北京100083

采用超声波电沉积方法在钼衬底上制备了Cu,In双层膜,随后硒化得到了CuInAe_2薄膜。采用扫描电镜(AEM)、能谱仪(EDA)和X射线衍射仪(XRD)研究了薄膜的表面形貌、化学成分和相组成。结果表明:利用超声波电沉积可以得到颗粒细小、均匀致密... 详细信息

采用超声波电沉积方法在钼衬底上制备了Cu,In双层膜,随后硒化得到了CuInAe_2薄膜。采用扫描电镜(AEM)、能谱仪(EDA)和X射线衍射仪(XRD)研究了薄膜的表面形貌、化学成分和相组成。结果表明:利用超声波电沉积可以得到颗粒细小、均匀致密的Cu层和In层;采用不同的工艺参数可以调节双层膜的Cu/In比率;双层膜在130℃下,退火6h后进行硒化,可得到符合化学计量比的CuInAe_2薄膜。

关键词： CuInSe2薄膜超声波电沉积硒化

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聚丙烯树脂等规指数测量不确定度的评定

塑料 2019年第3期48卷 127-130页

作者：王燕来中国石化北京化工研究院燕山分院分析中心

根据 GB/T 2412—2008《聚丙烯( PP)和丙烯共聚物热塑性塑料等规指数的测定》和 JJF 1059. 1—2012《测量不确定度评定与表示》,针对聚丙烯树脂等规指数的测定过程,分析了不确定度的来源,建立了等规指数测量不确定度的数学模型,计算了... 详细信息

根据 GB/T 2412—2008《聚丙烯( PP)和丙烯共聚物热塑性塑料等规指数的测定》和 JJF 1059. 1—2012《测量不确定度评定与表示》,针对聚丙烯树脂等规指数的测定过程,分析了不确定度的来源,建立了等规指数测量不确定度的数学模型,计算了测定过程中各试验条件的不确定度分量。通过不确定度分量的量化以及合成,当聚丙烯树脂的等规指数为 98. 42%时,其扩展不确定度为 0. 19%( k = 2)。结果表明,影响聚丙烯树脂等规指数测定的最大因素是试样萃取时的萃取速度,而且,萃取速度稳定在( 20 ± 5)次/h,连续萃取时间大于 6 h 时,试样能够萃取完成。

关键词：不确定度聚丙烯树脂等规指数影响因素评定

Highly transmitted silver nanowires-SWCNTs conductive flexible film by nested density structure and aluminum-doped zinc oxide capping layer for flexible amorphous silicon solar cells

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Journal of Materials Science & Technology 2022年第31期126卷 152-160页

作者： Shunliang Gao Xiaohui Zhao Qi Fu Tianchi Zhang Jun Zhu Fuhua Hou Jian Ni Chengjun Zhu Tiantian Li yanlai wang Vignesh Murugadoss Gaber A.M.Mersal Mohamed M.Ibrahim Zeinhom M.El-Bahy Mina Huang Zhanhu Guo The Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region College of Physical Science and TechnologyInner Mongolia UniversityHohhot 010021China Department of Electronic Science and Technology School of Electronic Information and Optical EngineeringNankai UniversityTianjin 300350China Advanced Materials Division Engineered Multifunctional Composites(EMC)Nanotech LLCKnoxvilleTN 37934United States Integrated Composites Laboratory(ICL) Department of Chemical and Bimolecular EngineeringUniversity of TennesseeKnoxvilleTN 37996United States Department of Chemistry College of ScienceTaif UniversityP.O.Box 11099Taif 21944Saudi Arabia Department of Chemistry Faculty of ScienceAl-Azhar UniversityNasr City 11884CairoEgypt College of Materials Science and Engineering Taiyuan University of Science and TechnologyTaiyuan 030024China

Indium tin oxide(ITO)is widely used in transparent conductive films(TCFs);however,several disadvan-tages,such as high cost and toxicity of indium,limit its ***,it is necessary to develop other materials that can replace *** nanowires or single walled carbon nanotubes(SWCNTs)have attracted considerable interest owing to their unique electrical,optical,and thermal stabilities,and thus,they are ideal for transparent electrodes for flexible or stretchable *** this study,we develop a novel architecture of composite TCFs on a polyethylene naphthalate(PEN)flexible ***,the silver nanowires-SWCNTs films with nested density structure were fabricated through ultrasonic spraying technology by varying the spraying *** achieving enhanced transmittance,we combined the larger irregular grids and holes with fewer nanowires stacked in the longitudinal direction,more optical chan-nels,and good carrier ***,aluminum-doped zinc oxide(AZO)was used as capping to the structure for enhancing the optical properties of the *** silver nanowires-SWCNTs/AZO(ASA)bilayer was obtained in the optimized architecture,which showed superior optoelectronic performance to that shown by commercial ITO with a high optical transmittance of 92%at the wavelength of 550 nm and low sheet resistance of 17/*** the specially structured conductive film,the significant improvement in the transmittance and uniformity of the sheet resistance was attributed to the effective nanowire junc-tion contact compared to that in ordinary structure of silver nanowires,which reduced the mean density of small clusters of *** with the silver nanowires-SWCNTs films,the ASA bilayer film exhibited excellent resistance to boiling,mechanical bending(10,000 cycles),and CO_(2)***,the sheet resistance of ASA changed slightly after the tape tests,thereby illustrating a strong adhesion to the PEN substrate after the enclosure of ***

关键词： Silver nanowires-SWCNTs Nested density TCFs Flexible substrate Photovoltaic devices

The effect of Zn incorporation on the optical band gap of CuGaS2:Ti thin films

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The effect of Zn incorporation on the optical band gap of Cu...

硫化时间对CuInS_2薄膜特性的影响（英文）

第四届新型太阳能电池学术研讨会

作者： Qingyan Li yanlai wang Ying Yang Chong Deng Xiangdong Cao Inner Mongolia University

A novel intermediate band(IB) material of Zn incorporation in Ti-doped CuGaS thin films has been successfully fabricated via a facile non vacuum method including ball milling, spin-coating and *** results have shown that the IB position of Ti-doped CuGaS thin films can be adjusted by Zn *** a given Ti%, raising Zn concentration leads to a significantly enhanced light absorption, which can be directly observed in the UV-Vis-NIR absorption *** this study, the optical band gap has a shortening of 0.19 eV when 0.6 % Zn is added to the 1.5 % Ti-doped *** to the Zn addition, the grains grow larger and squeeze together, which is observable from the surface morphology of the thin films using scanning electron microscope(SEM).The energy dispersive X-ray analysis(EDAX) spectrum demonstrates that ball milling can effectively make Ti and Zn elements co-coped evenly into CuGaS thin ***, the improved optical property of the Ti-doped CuGaS thin films due to the Zn incorporation also sheds lights in developing new material that could be a potential light absorption layers candidate of high efficiency solar cells.

关键词： Intermediate Band CuGa1-x-yTixZnyS2 thin films optical band gap chalcopyrite

来源： cnki会议评论

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稀有金属材料与工程 2015年第4期44卷 805-807页

作者：王利刚王延来姚伟朱俊徐金刚内蒙古大学半导体光伏技术自治区重点实验室内蒙古呼和浩特010021

磁控溅射制备Cu-In合金薄膜,随后通过固态源硫化制备了CuInS2。采用XRD、SEM、紫外可见光分光光度计和霍尔效应测试仪分析了薄膜的特性。结果表明：硫化时间为10min至30 min时,不同的硫化时间硫化后薄膜的成分几乎保持不变,薄膜的结晶... 详细信息

磁控溅射制备Cu-In合金薄膜,随后通过固态源硫化制备了CuInS2。采用XRD、SEM、紫外可见光分光光度计和霍尔效应测试仪分析了薄膜的特性。结果表明：硫化时间为10min至30 min时,不同的硫化时间硫化后薄膜的成分几乎保持不变,薄膜的结晶程度随时间的增加变好,电阻率随硫化时间的增加而提高,薄膜的光学带隙位于1.42-1.55eV之间。

关键词： CuInS2薄膜硫化时间光电特性

粉末涂敷法制备CuInSe_2薄膜的硒化烧结过程研究

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粉末冶金技术 2009年第2期27卷 132-137页

作者：聂洪波王延来王义民果世驹北京科技大学材料科学与工程学院北京100083

用粉末涂敷法在Mo箔上涂敷CuInSe2前驱体薄膜,进而在H2气氛中热处理制备了太阳能薄膜电池吸收层用CuInSe2薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)和其配备的能谱仪(EDS)对CuInSe2薄膜进行分析和表征,对硒化烧结过程中化学反应的可... 详细信息

用粉末涂敷法在Mo箔上涂敷CuInSe2前驱体薄膜,进而在H2气氛中热处理制备了太阳能薄膜电池吸收层用CuInSe2薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)和其配备的能谱仪(EDS)对CuInSe2薄膜进行分析和表征,对硒化烧结过程中化学反应的可能性进行了热力学计算。结果表明:硒化烧结过程分为三个阶段:二元化合物CuSe和三元化合物CuInSe2的形成均出现在硒化烧结的前两个阶段;第三个阶段主要是CuInSe晶粒长大和薄膜的致密化过程。H气氛在CuInSe薄膜烧结过程中可能起到催化剂的作用。

关键词： CuInSe2 Cu—In合金烧结热力学

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聚酯切片黏度测量不确定度的评定

理化检验（物理分册） 2019年第7期55卷 458-461页

作者：王燕来中国石化北京化工研究院燕山分院橡塑新型材料合成国家工程研究中心

以瓶用聚对苯二甲酸乙二醇酯树脂为研究对象,依据GB 17931-2003测定试样的特性黏度,分析了溶液浓度、溶样温度、溶样时间、溶样搅拌速率等参数对测定结果的影响,并依据JJF1059.1-2012对测定过程中引入的标准不确定度分量进行了评定。结... 详细信息

以瓶用聚对苯二甲酸乙二醇酯树脂为研究对象,依据GB 17931-2003测定试样的特性黏度,分析了溶液浓度、溶样温度、溶样时间、溶样搅拌速率等参数对测定结果的影响,并依据JJF1059.1-2012对测定过程中引入的标准不确定度分量进行了评定。结果表明:影响聚酯切片黏度测量不确定度的最主要因素是溶液浓度,溶样搅拌速率、试样的干燥处理和测量重复性也对测定结果影响较大,溶剂和溶液的流经时间对测定结果的影响较小。

关键词：聚酯切片黏度测量不确定度溶液浓度