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Review on metal halide perovskite-based optoelectronic synapses

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Photonics Research 2023年第5期11卷 787-807页

作者： XITONG HONG XINGQIANG LIU LEI LIAO xuming zou Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China State Key Laboratory for Chemo/Biosensing and Chemometrics College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

With the progress of both photonics and electronics,optoelectronic synapses are considered potential candidates to challenge the von Neumann bottleneck and the field of visual bionics in the era of big data.They are also regarded as the basis for integrated artificial neural networks(ANNs)owing to their flexible optoelectronic tunable properties such as high bandwidth,low power consumption,and high-density integration.Over the recent years,following the emergence of metal halide perovskite(MHP)materials possessing fascinating optoelectronic properties,novel MHP-based optoelectronic synaptic devices have been exploited for numerous applications ranging from artificial vision systems(AVSs)to neuromorphic computing.Herein,we briefly review the application prospects and current status of MHP-based optoelectronic synapses,discuss the basic synaptic behaviors capable of being implemented,and assess their feasibility to mimic biological synapses.Then,we focus on the two-terminal optoelectronic synaptic memristors and three-terminal transistor synaptic phototransistors(SPTs),the two essential apparatus structures for optoelectronic synapses,expounding their basic features and operating mechanisms.Finally,we summarize the recent applications of optoelectronic synapses in neuromorphic systems,including neuromorphic computing,high-order learning behaviors,and neuromorphic vision systems,outlining their potential opportunities and future development directions as neuromorphic devices in the field of artificial intelligence(AI).

关键词： artificial optoelectronic apparatus

Ultrahigh gain hot-electron tunneling transistor approaching the collection limit

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Science China(Information Sciences) 2023年第6期66卷 307-308页

作者： Jun LIN Pengfei LUO Xinpei DUAN Wujun ZHANG Chao MA Tong BU Wanhan SU Bei JIANG Guoli LI xuming zou Ting YU Lei LIAO Xingqiang LIU Faculty of Physics and Electronic Science Hubei University State Key Laboratory for Chemo/Biosensing and Chemometrics College of Semiconductors (College of Integrated Circuits)Hunan University School of Physics and Technology Wuhan University

A hot-electron transistor(HET) is a unipolar and majority carrier device with voltage-controlled transport of ballistic hot electrons,and the monochromatic high-energy hot electrons are afforded by the tunnel and filter oxide barriers.The injected hot electrons from the emitter transit through the tunnel barrier with a width below the carrier mean free path(MFP) into the base region and then cross the filter barrier and are finally collected by the collector.

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Promoting the optoelectronic and ferromagnetic properties of Cr_(2)S_(3)nanosheets via Se doping

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Science China(Physics,Mechanics & Astronomy) 2022年第7期65卷 138-146页

作者： Xinyun Zhou Chang Liu Lingting Song Hongmei Zhang Ziwei Huang Chenglin He Bailing Li Xiaohui Lin Zucheng Zhang Shun Shi Dingyi Shen Rong Song Jia Li Xingqiang Liu xuming zou Le Huang Lei Liao Xidong Duan Bo Li School of Physics and Electronics College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China Key Laboratory of Nondestructive Testing(Ministry of Education) Nanchang Hangkong UniversityNanchang 330063China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan UniversityChangsha 410082China School of Materials and Energy Guangdong University of TechnologyGuangzhou 510006China Shenzhen Research Institute of Hunan University Shenzhen 518063China Research Institute of Hunan University in Chongqing Chongqing 401120China

Doping can change the band structure of semiconductors,thereby affecting their electrical,optical,and magnetic properties.In this study,we describe the synthesis of two-dimensional(2D)Se-doped Cr_(2)S_(3)(Se-Cr_(2)S_(3))nanosheets using the chemical vapor deposition method.In these semiconductor nanosheets,the Se doping concentration can be controlled by tuning the Se/S mass ratio in the precursor.At the doping concentrations of 10.05%and 2.05%,the room temperature conductivity and mobility were increased by nearly 4 and 2 orders of magnitude,respectively.In addition,the response time of an ultrathin Se-Cr_(2)S_(3)photodetector was 200 times shorter than that of an undoped Cr_(2)S_(3)nanosheet photodetector.4.07%-Se-Cr_(2)S_(3)nanosheets show ferrimagnetic behavior with a Curie temperature of~200 K,which is 80 K higher than that of undoped Cr_(2)S_(3)nanosheets.A density functional theory calculation indicated that the Se doping can induce the formation of intercalated Cr vacancies in SeCr_(2)S_(3)and enhance its metallic characteristics.Our results demonstrated that Se-Cr_(2)S_(3)has significant potential in future electronic,optoelectronic,and spintronic devices.

关键词： two-dimensional materials Cr_(2)S_(3)nanosheets doping optoelectronics ferromagnetism

Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions

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Nano Research 2020年第8期13卷 2085-2090页

作者： Xu Zhao Peng Chen Xingqiang Liu Guoli Li xuming zou Yuan Liu Qilong Wu Yufang Liu Woo Jong Yu Lei Liao Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsChangsha410082China Henan Normal University School of PhysicsXinxiang453007China Department of Electronic and Electrical Engineering Sungkyunkwan UniversitySuwon440-746Republic of Korea

Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from ideal.In this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector barrier.Fairly monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling,which are accelerated and shifted to the collector region.The devices exhibit a high current on-off ratio of>105 and a high current density(JC)of∼1,000 A/cm2 at the same time.Notably,this work demonstrates a common-emitter current gain(β)value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron transistors.Furthermore,the temperature dependent performance is investigated,and theβvalue of 1,613 is obtained at 150 K.Therefore,this work presents the potential of 2D based transistors for high-performance applications.

关键词： bipolar junction transistor hot electron van der Waals heterostructure current gain

Erratum to:Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions

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Nano Research 2020年第8期13卷 2308-2308页

作者： Xu Zhao Peng Chen Xingqiang Liu Guoli Li xuming zou Yuan Liu Qilong Wu Yufang Liu Woo Jong Yu Lei Liao Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha410082China School of Physics Henan Normal UniversityXinxiang453007China Department of Electronic and Electrical Engineering Sungkyunkwan UniversitySuwon440-746Republic of Korea

The affiliation numbers of the authors were unfortunately misplaced on the first page and the first page of the ESM. Instead of Xu Zhao1,§ (✉), Peng Chen1,2,§, Xingqiang Liu2 (✉), Guoli Li2, xuming zou2, Yuan Liu2, Qilong Wu2, Yufang Liu1 (✉), Woo Jong Yu3, and Lei Liao2 1 Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Changsha 410082, China 2 Henan Normal University, School of Physics, Xinxiang 453007, China 3 Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea § Xu Zhao and Peng Chen contributed equally to this work. It should read Xu Zhao1,2,§ (✉), Peng Chen1,2,§, Xingqiang Liu1 (✉), Guoli Li1, xuming zou1, Yuan Liu1, Qilong Wu1, Yufang Liu2 (✉), Woo Jong Yu3, and Lei Liao1 1 Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Changsha 410082, China 2 Henan Normal University, School of Physics, Xinxiang 453007, China 3 Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea § Xu Zhao and Peng Chen and contributed equally to this work.

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美国图书馆对我国图书馆事业的借鉴意义

图书馆 2013年第1期 4-6页

作者：邹序明湖南图书馆湖南长沙410011

本文介绍了2012年中美图书馆员专业交流项目的内容,美国公共图书馆的理念、服务特点、服务体系、建筑文化以及对我国图书馆事业的借鉴意义。

关键词：美国公共图书馆特色

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二维过渡金属硫化物在电学应用中的研究进展

中国科学：物理学、力学、天文学 2016年第10期46卷 128-137页

作者：邹旭明廖蕾武汉大学物理科学与技术学院人工微结构教育部重点实验室武汉430072

近些年来,石墨烯由于其独特的层状结构和电学特性已经成为国内外关注的焦点.随着石墨烯研究的快速发展及材料制备技术的不断革新,其他具有二维层状结构特征的材料,如过渡金属硫化物(Transition-Metal Sulfides,TMSs),也被逐渐研究并应用... 详细信息

近些年来,石墨烯由于其独特的层状结构和电学特性已经成为国内外关注的焦点.随着石墨烯研究的快速发展及材料制备技术的不断革新,其他具有二维层状结构特征的材料,如过渡金属硫化物(Transition-Metal Sulfides,TMSs),也被逐渐研究并应用.与石墨烯类似,TMSs拥有诸多优良的特性,例如良好的机械柔韧性和热稳定性、表面无悬挂键以及与硅CMOS工艺相兼容等.更为重要的是,零带隙的特点使石墨烯场效应晶体管的开关比很低,相比起来,部分TMSs材料具有令人满意的带隙,因而在半导体器件领域中具有巨大的应用潜力.本文简要介绍了TMSs的基本结构特点、能带特征及电学性质,其中重点以硫化钼为例,评述了其在场效应晶体管、逻辑电路及传感器等方面的具体应用,最后展望了TMSs未来的发展方向.

关键词：过渡金属硫化物硫化钼电学性质场效应晶体管

基于数值模拟方法的溪洛渡水库蓄水后地震活动性突变原因分析

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水利水电技术（中英文） 2022年第10期53卷 186-197页

作者：邹旭明钟菊芳陈竹胡祎石南昌航空大学土木建筑学院江西南昌330063

溪洛渡水库自2013年5月开始蓄水并正式投入使用后,库区周边地区的地震活动性发生了较大的变化,且大量地震集中出现在位于库区周边10 km以内的务基镇、黄琅镇一带。为了研究库水水位变化对库区周边地区地震活动性的影响,采用数值模拟方法... 详细信息

溪洛渡水库自2013年5月开始蓄水并正式投入使用后,库区周边地区的地震活动性发生了较大的变化,且大量地震集中出现在位于库区周边10 km以内的务基镇、黄琅镇一带。为了研究库水水位变化对库区周边地区地震活动性的影响,采用数值模拟方法,对库水荷载产生的附加弹性应力场以及库仑应力变化量进行了计算。结果表明:(1)库水荷载产生的弹性附加应力对峨边—金阳断裂以及莲峰断裂影响较大,其附加正应力和剪应力均达到kPa量级;(2)库伦应力增量达到0.01 MPa量级的区域集中在云山村—田坝村一带,而务基镇周边地区的库仑应力变化量并未达到这一量级。经过分析认为,单纯的库水荷载产生的弹性附加应力不足以使水库影响区内的地震活动性发生如此大的变化,务基镇一带的背景应力可能在蓄水前就已经达到了临界状态,库水荷载在该处只起到了触发作用。

关键词：水库地震数值模拟弹性响应库仑应力变化量地震成因

公共图书馆的职业尊严与职业使命——从二级图书馆办出一级幼儿园说起

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图书馆 2010年第4期 4-5,58页

作者：邹序明湖南图书馆湖南长沙410011

公共图书馆传承文明,传播知识,本应有职业尊严,但由于放弃自己的职业使命,不具备职业技能,所以未能享有应有的职业尊严和职业回报。改变这种态势的办法应该是推行人事制度改革,完成图书馆的职业使命,重获职业尊严。

关键词：公共图书馆职业尊严职业使命