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Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

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Science China(Information Sciences) 2024年第6期67卷 198-206页

作者： Qiyu YANG Zheng-Dong LUO Fei XIAO Junpeng ZHANG Dawei ZHANG Dongxin TAN xuetao gan Yan LIU Zhufei CHU Yinshui XIA Genquan HAN Hangzhou Institute of Technology Xidian University State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University School of Artificial Intelligence Xidian University School of Materials Science and Engineering University of New South Wales (UNSW) Sydney ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) University of New South Wales (UNSW) Sydney Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University Faculty of Electrical Engineering and Computer Science Ningbo University

Driven by the explosive development of data-centric computation applications, it is becoming urgent to develop in-memory computing devices that are beyond the von Neumann architecture with an arrangement of separated logic and memory components. The transistor-type solid-state non-volatile memories,such as ferroelectric field-effect transistors(Fe FETs), have long been regarded as a competitive candidate for future in-memory computing architectures. However, the density scaling towards high-density arrays would require advanced Fe FETs with reduced footprints, which remains a great challenge so far. Here, a vertical-transport(VT) Fe FET that flips the charge transport channel perpendicular to the substrate plane is proposed, in which a ferroelectric gate and a van der Waals(vd W) heterojunction channel are vertically integrated, effectively reducing the device footprints. The proposed VT-Fe FET shows not only the robust binary non-volatile memory states but also several key synaptic functionalities at the device level. An artificial neural network with supervised learning was simulated based on the device conductance switching properties,showing excellent classification accuracy for the MNIST handwritten digits. These findings suggest that the proposed VT-Fe FET could offer a new solution for future non-volatile memories as well as more advanced neuromorphic systems.

关键词： vdW heterostructure non-volatile memory vertical-transport transistor ferroelectric field-effect transistor memristive devices

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Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

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Nano Research 2024年第6期17卷 5670-5679页

作者： Yong Wang Dingyi Yang Wei Xu Yongjie Xu Yu Zhang Zixuan Cheng Yizhang Wu xuetao gan Wei Zhong Yan Liu Genquan Han Yue Hao Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of MicroelectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710071China Emerging Device and Chip Laboratory Hangzhou Institute of TechnologyXidian UniversityHangzhou 311200China INRS Centre for Energy Materials and Telecommunications1650 Boul.Lionel BouletVarennesQC J3X 1P7Canada National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China School of Education Jiangsu Open UniversityNanjing 210036China Department of Physics Shaanxi University of Science and TechnologyXi’an 710021China Department of Applied Physical Sciences The University of North Carolina at Chapel HillChapel HillNC 27514USA Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129 China

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic ***,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition *** exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane ***,we acquired clear evidences of ferromagnetic behavior at room *** structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and *** a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room *** addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

关键词： crystallinity carbon nitride room-temperature ferromagnetism piezoelectricity magnetic force microscopy density functional theory(DFT)calculations

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Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

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Science China(Information Sciences) 2024年第9期67卷 346-347页

作者： Yong ZHANG Dongxin TAN Cizhe FANG Zheng-Dong LUO Qiyu YANG Qiao ZHANG Yu ZHANG xuetao gan Yan LIU Yue HAO Genquan HAN State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University Hangzhou Institute of Technology Xidian University Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and TechnologyNorthwestern Polytechnical University

Machine vision has become crucial in the modern intelligence era, especially in rapidly developing applications such as autonomous vehicles and robotic visual sensors [1].With the ever-increasing requirements of visua... 详细信息

关键词： Ferroelectric RAM

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“微腔光子学”专辑导读

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光子学报 2024年第5期53卷 1-2页

作者：甘雪涛李贝贝李峰西北工业大学中国科学院物理研究所西安交通大学

光学微腔作为典型的光学元器件,由于模式体积小、光学损耗低、结构紧凑,可以应用于非线性光学、集成光学、量子光学、高灵敏度传感器等多个领域从而受到广泛关注。近年来,随着光学材料微纳加工和半导体芯片工艺的发展,光学微腔逐渐走上... 详细信息

光学微腔作为典型的光学元器件,由于模式体积小、光学损耗低、结构紧凑,可以应用于非线性光学、集成光学、量子光学、高灵敏度传感器等多个领域从而受到广泛关注。近年来,随着光学材料微纳加工和半导体芯片工艺的发展,光学微腔逐渐走上可集成化的发展道路,同时,更小的模式体积、更精细的结构控制及更有效的模式调控微腔光子研究在光子学信息器件发展中扮演着至关重要的作用。

关键词：非线性光学量子光学光学微腔半导体芯片光子学光学元器件集成光学光学材料

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Broadband and continuous wave pumped second-harmonic generation from microfiber coated with layered GaSe crystal

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Opto-Electronic Advances 2023年第9期6卷 59-68页

作者： Zhen Hao Biqiang Jiang Yuxin Ma Ruixuan Yi xuetao gan Jianlin Zhao Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China

The conversion-efficiency for second-harmonic(SH)in optical fibers is significantly limited by extremely weak second-order nonlinearity of fused silica,and pulse pump lasers with high peak power are widely ***,we propose a simple strategy to efficiently realize the broadband and continuous wave(CW)pumped SH,by transferring a crystalline GaSe coating onto a microfiber with phase-matching *** the experiment,high efficiency up to 0.08%W-1mm-1 is reached for a C-band pump *** high enough efficiency not only guarantees SH at a single frequency pumped by a CW laser,but also multi-frequencies mixing supported by three CW light ***,broadband SH spectrum is also achieved under the pump of a superluminescent light-emitting diode source with a 79.3 nm *** proposed scheme provides a beneficial method to the enhancement of various nonlinear parameter processes,development of quasi-monochromatic or broadband CW light sources at new wavelength regions.

关键词： nonlinear optics second-harmonic generation continuous wave pump high efficiency multi-frequencies mixing broad spectra microfibers gallium selenide

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Electrically induced dynamic Fano-like resonance in a graphene-coated fiber grating

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Photonics Research 2022年第5期10卷 1238-1243页

作者： BIQIANG JIANG XIAOMING ZHANG AILUN LI YUEGUO HOU ZHEN HAO xuetao gan JIANLIN ZHAO Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China

We created an all-fiber solution for fast,continuous,and controllable tuning of Fano-like *** embedding a graphene-coated fiber Bragg grating into one arm of a Mach—Zehnder interferometer,the narrow Bragg resonance interacts with a broad interference spectrum,forming a sharp asymmetric Fano-like resonance line *** the application of an electrical voltage over the graphene layer,the generated Joule heating shifts the Bragg resonance and consequently tunes the asymmetric Fano-like resonance line shape to a symmetric dip or electromagnetically induced transparency-like ***,by exploiting two modulated states with reversed Fano-like resonance line shapes,an optical switch can operate with an extinction ratio of 9 *** well-engineered Fano-like resonance in an all-fiber structure opens up new horizons for applications of fiber gratings in optical signal processing,slow-light lasing,and fiber sensing.

关键词： fiber interferometer tuning

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Second harmonic generation in a hollow-core fiber filled with GaSe nanosheets

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Science China(Information Sciences) 2022年第6期65卷 234-240页

作者： Zhen HAO Yuxin MA Biqiang JIANG Yueguo HOU Ailun LI Ruixuan YI xuetao gan Jianlin ZHAO MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University

Frequency conversions using various all-fiber nonlinear devices can benefit many applications, including communications, sensing, microscope, and imaging. In this study, we report in-fiber second harmonic generation(SHG) in an optical hollow-core fiber(HCF) that can be used for frequency conversion. The HCF filled with a dispersion of gallium selenide(GaS e) nanosheets in the ultraviolet-cured optical adhesive supports a well-propagating mode in the fiber core, which enables effective light interaction with dispersed GaS e nanosheets and a strong SHG process. Based on theoretical analysis, the optimal HCF length for maximizing SHG is approximately 0.41 mm. The broadband SHG of the GaS e-filled HCF device is demonstrated by tuning the pump wavelength from 1460 to 1600 nm. Moreover, a time-varied SHG in the device is revealed due to additional second-order susceptibility induced by the polarization of silica. The proposed device with a compact and robust structure has the potential to be connected to existing all-fiber telecom and sensing systems for numerous nonlinear engineering applications.

关键词： second-harmonic generation gallium selenide hollow-core fiber broadband operation wavelength time-varied second harmonic generation

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Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

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Light(Science & Applications) 2022年第5期11卷 901-910页

作者： Ruijuan Tian xuetao gan Chen Li Xiaoqing Chen Siqi Hu Linpeng Gu Dries Van Thourhout Andres Castellanos-Gomez Zhipei Sun Jianlin Zhao Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University710129 Xi’anChina Photonics Research Group and Center for Nano and Biophotonics Ghent UniversityB-9000 GentBelgium Materials Science Factory Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC)E-28049 MadridSpain Department of Electronics and Nanoengineering and QTF Centre of Excellence Aalto UniversityFI-02150 EspooFinland

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free ***,the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metalsemiconductor-metal,suffering from high dark currents and low responsivities at high operation ***,we report a van der Waals PN heterojunction photodetector,composed of p-type black phosphorous and n-type molybdenum telluride,integrated on a silicon nitride *** built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the *** a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous,the dark current is lower than 7 nA,which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus *** intrinsic responsivity up to 577 mA W^(−1) is ***,the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection,enabling an increased responsivity of 709 mA W^(−1).Besides,the heterojunction photodetector exhibits a response bandwidth of~1.0 GHz and a uniform photodetection over a wide spectral range,as experimentally measured from 1500 to 1630 *** demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current,high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon,lithium niobate,polymer,etc.

关键词： heterojunction responsivity waveguide

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Solvent-free fabrication of broadband WS2 photodetectors on paper

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Opto-Electronic Advances 2023年第3期6卷 1-11页

作者： Wenliang Zhang Onur Çakıroğlu Abdullah Al-Enizi Ayman Nafady xuetao gan Xiaohua Ma Sruthi Kuriakose Yong Xie Andres Castellanos-Gomez Materials Science Factory Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC)Madrid E-28049Spain Department of Chemistry College of ScienceKing Saud UniversityRiyadh 11451Saudi Arabia Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710071China

Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible ***,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-performance photodetectors.A solvent-free WS_(2) film deposited on paper favors an effective electron-hole separation and hampers *** as-prepared paper-based WS2 photodetectors exhibit a sensitive photoresponse over a wide spectral range spanning from ultraviolet(365 nm)to near-infrared(940 nm).Their responsivity value reaches up to~270 mA W^(−1) at 35 V under a power density of 35 mW cm^(−2).A high performance photodetector was achieved by controlling the environmental exposure as the ambient oxygen molecules were found to decrease the photoresponse and stability of the WS_(2) ***,we have built a spectrometer using such a paperbased WS_(2) device as the photodetecting component to illustrate its potential *** present work could promote the development of cost-effective disposable photodetection devices.

关键词： paper electronics photodetector van der Waals materials solvent-free deposition tungsten disulfide

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Graphene-supported manipulation of surface plasmon polaritons in metallic nanowaveguides

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Photonics Research 2017年第3期5卷 162-167页

作者： HUA LU xuetao gan DONG MAO JIANLIN ZHAO MOE Key Laboratory of Space Applied Physics and Chemistry and Shaanxi Key Laboratory of Optical Information TechnologySchool of ScienceNorthwestern Polytechnical University

We investigate the electrically controlled light propagation in the metal–dielectric–metal plasmonic waveguide with a sandwiched graphene monolayer. The theoretical and simulation results show that the propagation loss exhibits an obvious peak when the permittivity of graphene approaches an epsilon-near-zero point when adjusting the gate voltage on graphene. The analog of electromagnetically induced transparency(EIT) can be generated by introducing side-coupled stubs into the waveguide. Based on the EIT-like effect, the hybrid plasmonic waveguide with a length of only 1.5 μm can work as a modulator with an extinction ratio of ～15.8 d B, which is 2.3times larger than the case without the stubs. The active modulation of surface plasmon polariton propagation can be further improved by tuning the carrier mobility of graphene. The graphene-supported plasmonic waveguide system could find applications for the nanoscale manipulation of light and chip-integrated modulation.

关键词： of on in Graphene-supported manipulation of surface plasmon polaritons in metallic nanowaveguides EIT for

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