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Versatile photonic molecule switch in multimode microresonators

Light(Science & Applications) 2024年第3期13卷 498-509页

作者： Zihan Tao Bitao Shen Wencan Li Luwen Xing Haoyu wang Yichen Wu Yuansheng Tao Yan Zhou Yandong He Chao Peng Haowen Shu xingjun wang State Key Laboratory of Advanced Optical Communications System and Networks School of ElectronicsPeking UniversityBeijing 100871China College of Engineering Peking UniversityBeijing 100871China School of Integrated Circuits Peking University100871 BejingChina Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010China Frontiers Science Center for Nano-optoelectronics Peking UniversityBeijing 100871China Peng Cheng Laboratory Shenzhen 518055China

Harnessing optical supermode interaction to construct artificial photonic molecules has uncovered a series of fundamental optical phenomena analogous to atomic physics.Previously,the distinct energy levels and interactions in such two-level systems were provided by coupled microresonators.The reconfigurability is limited,as they often require delicate external field stimuli or mechanically altering the geometric factors.These highly specific approaches also limit potential applications.Here,we propose a versatile on-chip photonic molecule in a multimode microring,utilizing a flexible regulation methodology to dynamically control the existence and interaction strength of spatial modes.The transition between single/multi-mode states enables the“switched-off/on”functionality of the photonic molecule,supporting wider generalized applications scenarios.In particular,“switched-on”state shows flexible and multidimensional mode splitting control in aspects of both coupling strength and phase difference,equivalent to the a.***.and d.c.Stark effect.“Switched-off”state allows for perfect low-loss single-mode transition(Qi~10 million)under an ultra-compact bend size(FSR~115 GHz)in a foundry-based silicon microring.It breaks the stereotyped image of the FSR-Q factor trade-off,enabling ultra-wideband and high-resolution millimeter-wave photonic operations.Our demonstration provides a flexible and portable solution for the integrated photonic molecule system,extending its research scope from fundamental physics to real-world applications such as nonlinear optical signal processing and sixth-generation wireless communication.

关键词： switched multimode millimeter

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong wang Hao wang Haomin wang Jialong wang Junyong wang Wenhui wang xingjun wang Yeliang wang Yuwei wang Zhenyu wang Yao WE Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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A low-fabrication-temperature, high-gain chip-scale waveguide amplifier

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Science China(Information Sciences) 2022年第6期65卷 247-255页

作者： Bo wang Peiqi ZHOU xingjun wang Yandong HE State Key Laboratory of Advanced Optical Communication Systems and Networks Department of ElectronicsSchool of Electronics Engineering and Computer Science Peking University Institute of Microelectronics School of Electronics Engineering and Computer Science Peking University Frontier Science Center for Nano-optoelectronics Peking University Peking University Yangtze Delta Institute of Optoelectronics Peng Cheng Laboratory

The increasing prevalence of integrated on-chip optoelectronic devices has identified serious issues regarding inter-device transmission and coupling losses, highlighting an urgent need for on-chip waveguide amplifiers to compensate for these losses. Compared with other Er-based optical materials, erbium silicate is ideally suited to high-efficiency on-chip amplifiers and lasers because of its extremely high Er3+concentration(1022cm-3). Nevertheless, erbium silicate must be annealed above 1000℃ to crystallize and activate the Er3+, which damages other on-chip optoelectronic components and is not conducive to device integration.Here, we report a low-fabrication-temperature, high-luminescence-efficiency gain material by adding Bi2O3to an erbium-ytterbium silicate mixed film. Our experiments demonstrate that the proposed film crystallizes at 600℃ while the activation of Er3+is also achieved, which is the lowest activation temperature of on-chip waveguide amplifier to our knowledge. This material forms the basis for a new chip-scale waveguide amplifier design, with a theoretical multi-energy-level model of Bi-Er-Yb in the mixed thin films used to analyze its signal enhancement properties. We achieve a peak on-chip gain of 23 dB in a 3.3-mm-long waveguide under the pump and signal powers of 300 mW and 1 μW, respectively. These results highlight the potential of the proposed material for realizing on-chip amplifiers and lasers for large-scale nanophotonic integrated circuits.

关键词： photonic circuit integration low fabrication temperature high gain rare earth material waveguide amplifier

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An ultra-compact polarization-insensitive slot-strip mode converter

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Frontiers of Optoelectronics 2022年第1期15卷 53-59页

作者： Zihan Tao Bo wang Bowen Bai Ruixuan Chen Haowen Shu Xuguang Zhang xingjun wang State Key Laboratory of Advanced Optical Communication Systems and Networks School of ElectronicsPeking UniversityBeijing 100871China Frontier Science Center for Nano-Optoelectronics Peking UniversityBeijing 100871China Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010China Peng Cheng Laboratory Shenzhen 518055China

Integrated waveguides with slot structures have attracted increasing attention due to their advantages of tight mode confinement and strong light-matter interaction.Although extensively studied,the issue of mode mismatch with other strip waveguide-based optical devices is a huge challenge that prevents integrated waveguides from being widely utilized in large-scale photonic-based circuits.In this paper,we demonstrate an ultra-compact low-loss slot-strip converter with polarization insensitivity based on the multimode interference(MMI)effect.Sleek sinusoidal profiles are adopted to allow for smooth connection between the slot and strip waveguide,resulting reflection reduction.By manipulating the MMI effect with structure optimization,the self-imaging positions of the TE0 and TM0 modes are aligned with minimized footprint,leading to low-loss transmission for both polarizations.The measurement results show that high coupling efficiencies of−0.40 and−0.64 dB are achieved for TE_(0) and TM_(0) polarizations,respectively.The device has dimensions as small as 1.1μm×1.2μm and composed of factory-available structures.The above characteristics of our proposed compact slot-strip converter makes it a promising device for future deployment in multi-functional integrated photonics systems.

关键词： Silicon photonics Slot-strip convertor Multimode interference(MMI) Polarization-insensitive

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In-situ study on structure evolution and gasification reactivity of biomass char with K and Ca catalysts at carbon dioxide atmosphere

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Carbon Resources Conversion 2023年第1期6卷 27-33页

作者： xingjun wang Qian Chen Huaili Zhu Xueli Chen Guangsuo Yu School of Resources and Environmental Engineering East China University of Science and TechnologyShanghai 200237China Shanghai Engineering Research Center of Coal Gasification Shanghai 200237China

The structural evolution and gasification reactivity of biochar prepared from the pyrolysis of wheat straw were investigated by in-situ Raman spectroscopy and thermogravimetric analysis.The Raman spectra consisted of a combination of four Lorentzian bands(D1,D2,D4,G)and one Gaussian band(D3)in the first-order region.The experimental results showed that the addition of catalysts or the presence of ash could improve the CO_(2) gasification reactivity of biochar and result in a larger ID1/IG ratio and a lower IG/IALL ratio,meaning that the carbon structure was less ordered,and there were also more active sites such as amorphous carbon and cross-linked structures;Ca-based catalysts and K-based catalysts changed the evolution of biochar structure in a different way in CO_(2) atmosphere,the ID3/ID1 of Ca-based biochar was close to the value of non-catalyst biochar and decreased slowly,indicating that the Ca-based catalysts can stabilize the aromatic rings,while the IG/IALL of K-based biochar decreases significantly and the ID3/ID1 increased significantly,indicating the increase of carbon structure defects and the cracking of large aromatic rings in bio-char into small ones;a scheme of K and Ca reaction with biochar in CO_(2) gasification process was proposed.

关键词： In-situ Raman spectroscopy K and Ca catalysts Gasification reactivity Structure evolution Biomass char

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Fully integrated hybrid microwave photonic receiver

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Photonics Research 2022年第6期10卷 1472-1483页

作者： JIACHEN LI SIGANG YANG HONGWEI CHEN xingjun wang MINGHUA CHEN WEIWEN ZOU Beijing National Research Center for Information Science and Technology(BNRist) Department of Electronic EngineeringTsinghua UniversityBeijing 100084China State Key Laboratory of Advanced Optical Communications System and Networks Department of ElectronicsSchool of Electronics Engineering and Computer SciencePeking UniversityBeijing 100871China State Key Laboratory of Advanced Optical Communication Systems and Networks Intelligent Microwave Lightwave Integration Innovation Center(imLic)Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghai 200240China

Microwave photonic receivers are a promising candidate in breaking the bandwidth limitation of traditional radio-frequency(RF)receivers.To further balance the performance superiority with the requirements regarding size,weight,and power consumption(SWa P),the implementation of integrated microwave photonic microsystems has been considered an upgrade path.However,up to now,to the best of our knowledge,chip-scale fully integrated microwave photonic receivers have not been reported due to the limitation of material platforms.In this paper,we report a fully integrated hybrid microwave photonic receiver(FIH-MWPR)obtained by comprising the indium phosphide(In P)laser chip and the monolithic silicon-on-insulator(SOI)photonic circuit into the same substrate based on the low-coupling-loss micro-optics method.Benefiting from the integration of all optoelectronic components,the packaged FIH-MWPR exhibits a compact volume of 6 cmand low power consumption of 1.2 W.The FIH-MWPR supports a wide operation bandwidth from 2 to 18 GHz.Furthermore,its RF-link performance to down-convert the RF signals to the intermediate frequency is experimentally characterized by measuring the link gain,the noise figure,and the spurious-free dynamic range metrics across the whole operation frequency band.Moreover,we have utilized it as a de-chirp receiver to process the broadband linear frequencymodulated(LFM)radar echo signals at different frequency bands(S-,C-,X-,and Ku-bands)and successfully demonstrated its high-resolution-ranging capability.To the best of our knowledge,this is the first realization of a chip-scale broadband fully integrated microwave photonic receiver,which is expected to be an important step in demonstrating the feasibility of all-integrated microwave photonic microsystems oriented to miniaturized application scenarios.

关键词： method microwave bands

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Proton radiation effects on high-speed silicon Mach-Zehnder modulators for space application

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Science China(Information Sciences) 2022年第12期65卷 301-312页

作者： Changhao HAN Zhaoyi HU Yuansheng TAO Engang FU Yandong HE Fenghe YANG Jun QIN xingjun wang State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Peking University State Key Laboratory of Nuclear Physics and Technology School of Physics Peking University Institute of Microelectronics School of Integrated Circuits Peking University Peking University Yangtze Delta Institute of Optoelectronics Frontier Science Center for Nano-optoelectronics Peking University Peng Cheng Laboratory

In this paper, performance degradation effects on high-speed silicon Mach-Zehnder modulators under proton radiation were investigated for future space environment applications. The test devices were exposed to 3-MeV protons of three fluence levels(5×1013, 2×1014, and 5×1015ions/cm2), which is comparable to the radiation amount for operating in a harsh space environment after several decades. The performance of the silicon modulator after radiation was characterized in terms of modulation efficiency and eye diagram.The results illustrate that the modulation efficiency is significantly reduced after proton radiation and shows an obvious decrease with increasing radiation fluence. The extinction ratios of the on-off keying(OOK) eye diagram are obviously dropped with increasing radiation fluence and correspond well to modulation efficiency degradation. Furthermore, three representative states for data transmission are demonstrated under three fluences, from still working to the critical state and eventually complete fail. Displacement damage and ionization damage are the two major mechanisms during proton radiation, which lead to the bulk defects and accumulating defect charges and cause performance degradation of silicon Mach-Zehnder modulators.

关键词： silicon Mach-Zehnder modulator proton radiation space application silicon photonics optical communication

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Correction to:An ultra‑compact polarization‑insensitive slot‑strip mode converter

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Frontiers of Optoelectronics 2022年第3期15卷 73-74页

作者： Zihan Tao Bo wang Bowen Bai Ruixuan Chen Haowen Shu Xuguang Zhang xingjun wang State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Peking University Beijing 100871 China Frontier Science Center for Nano-Optoelectronics Peking University Beijing 100871 China Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010 China Peng Cheng Laboratory Shenzhen 518055 China

Correction to:Frontiers of Optoelectronics(2022)15:5 https://***/10.1007/s12200-022-00008-5 Following publication of the original article[1],the authors identifed an error in Fig.3b.The correct Fig.3 is in this correction,and the original article has been corrected.Open Access This article is licensed under a Creative Commons Attribution 4.0 International License,which permits use,sharing,adaptation,distribution and reproduction in any medium or format,as long as you give appropriate credit to the original author(s)and the source,provide a link to the Creative Commons licence,and indicate if changes were made.

关键词： Open app strip

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Towards silicon photonic neural networks for artificial intelligence

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Science China(Information Sciences) 2020年第6期63卷 105-118页

作者： Bowen BAI Haowen SHU xingjun wang Weiwen ZOU State Key Laboratory of Advanced Optical Communications System and Networks School of Electronics Engineering and Computer Science Peking University Frontiers Science Center for Nano-optoelectronics Peking University State Key Laboratory of Advanced Optical Communication Systems and Networks Intelligent Microwave Lightwave Integration Innovation Center(iMLic) Department of Electronic Engineering Shanghai Jiao Tong University

Brain-inspired photonic neural networks for artificial intelligence have attracted renewed interest. For many computational tasks, such as image recognition, speech processing and deep learning, photonic neural networks have the potential to increase the computing speed and energy efficiency on the orders of magnitude compared with digital electronics. Silicon Photonics, which combines the advantages of electronics and photonics, brings hope for the large-scale photonic neural network integration. This paper walks through the basic concept of artificial neural networks and focuses on the key devices which construct the silicon photonic neuromorphic systems. We review some recent important progress in silicon photonic neural networks, which include multilayer artificial neural networks and brain-like neuromorphic systems, for artificial intelligence. A prototype of silicon photonic artificial intelligence processor for ultra-fast neural network computing is also proposed. We hope this paper gives a detailed overview and a deeper understanding of this emerging field.

关键词： photonic neural networks artificial intelligence deep learning photonic computing accelerator silicon photonics

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A design method for high fabrication tolerance integrated optical mode multiplexer

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Science China(Information Sciences) 2020年第6期63卷 184-194页

作者： Bitao SHEN Haowen SHU Linjie ZHOU xingjun wang State Key Laboratory on Advanced Optical Communication Systems and Networks Department of ElectronicsSchool of Electronics Engineering and Computer Science Peking University State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic Engineering Shanghai Jiao Tong University Nano-optoelectronics Frontier Center of Ministry of Education Peking University

The tapered asymmetric directional coupler has the potential to realize high fabrication tolerance and high transmission efficiency on-chip mode multiplexer. However, the geometry parameter selection of tapered structure remains empirical. In this paper, we propose a design method for the tapered structure based on genetic algorithm. Combined with the adjusted coupling equations and interpolation method, lowtime-cost optimization can be realized. Three mode multiplexers(TE0&TE1, TE0&TE2 and TE0&TE5)are designed by our method. According to simulation results, the insertion loss of the designed devices is lower than 1.8 dB and the crosstalk is lower than-15 dB when the fabrication error is within required range(±10 nm for TE0&TE2 and TE0&TE5, and ±20 nm for TE0&TE1) in the bandwidth of 1.5–1.6 μm. In addition, the entire optimization process takes only 2 h for each device, which is around the time cost of a single 3 D simulation.

关键词： mode multiplexer directional coupler taper structure coupled-mode theory genetic algorithm

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