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The expression of c-src gene in the carcinogenesis process of human cardia adenocarcinoma

World Journal of Gastroenterology 1999年第6期5卷 488-491页

作者： wang Xiu Jie, YUAN Shu lan, xiao Lin, wang Xu Hua and wang Chao Jun Institute of Cancer Research First University Hospital West China University of Medical Sciences Chengdu 610041 Sichuan Province China Department of Oncology China

AIM To investigate the activation, expression of c src gene and its role in the carcinogenetic process of human cardia adenocarcinoma (CA). METHODS Fifty six cases of CA, 34 cases of normal, 36 cases of protiferative epithelia adjacent to carcinoma, and 20 cases of lymph node metastases of CA were studied for PP60 c src , the expression product of c src gene immunohistochemically by using the specific monoclonal antibody, Mab327. RESULTS The positive rates of PP60 c src in the normal epithelia, protiferative epithelia, CA and lymph node metastases were 29 4% (10/*!34), 94 4% (34/*!36), 71 4% (40/*!56) and 60 0% (12/*!20) , respectively, among them, the differences of the positive rates were statistically significant ( P <0 01) . The expression levels of PP60 c src in CA and proliferative epithelia were significantly higher than that in the normal epithelia ( P <0 01) . The PP60 c src positive rates in the papillary, tubular, poorly differentiated and mucous adenocarcinoma were 75 0% (6/*!8) , 81 8% (18/*!22) , 50 0% (10/*!20) and 100 0% (6/*!6) , respectively, whereas those of tubular and mucous adenocarcinomas were significantly higher than those of papillary and poorly differentiated adenocarcinomas ( P <0 05) , and the PP60 c src expression levels of tubular and mucous adenocarcinomas were also significantly higher than those of papillary and poorly differentiated adenocarcinomas ( P <0 01) . CONCLUSION The activation and expression of c src gene are associated with the initiation and development of human CA; the protein amount of PP60 c src increased during the process of carcinogenesis; and PP60 c src expression is also related to lymph node metastases.

关键词： c src gene expression product PP60 c src cardia adenocarcinoma carcinogenesis neoplasm metastasis immunohistochemistry

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Dynamical control of population and entanglement for open Λ-type atoms by engineering the environment

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Chinese Physics B 2019年第3期28卷 97-102页

作者： xiao-lan wang Yu-Kun Ren Hao-Sheng Zeng Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education and Department of PhysicsHunan Normal UniversityChangsha 410081China

The exactly analytical solution for the dynamics of the dissipative Λ-type atom in the zero-temperature Lorentzian environment is presented. On this basis, we study the evolution of the population and entanglement. We find that the stable populations on the two lower levels of the Λ-type atom can be effectively adjusted by the combination of the relative decay rate and the environmental spectral frequency. However, for the initial Werner-like state, the stable entanglement between the two Λ-type atoms has very little tunability. Furthermore, the stable entanglement for the bilateral environment case is larger than that of the unilateral environmental case. A nonintuitive relation between the stable entanglement and stable population is found.

关键词： open quantum systems population entanglement

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Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes

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Chinese Physics Letters 2018年第8期35卷 79-82页

作者： Zhi-Hui wang xiao-lan wang Jun-Lin Liu Jian-Li Zhang Chun-lan Mo Chang-Da Zheng xiao-Ming Wu Guang-Xu wang Feng-Yi Jiang National Engineering Technology Research Center for LED on Si Substrate Nanchang University

In GaN-based green light-emitting diodes（LEDs） with different green quantum well numbers grown on Si（111）substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.

关键词： GaN Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes

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Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

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Chinese Physics Letters 2018年第2期35卷 88-92页

作者： Ai-Xing Li Chun-lan Mo Jian-Li Zhang xiao-lan wang xiao-Ming Wn Guang-Xu wang Jun-Lin Liu Feng-Yi Jiang National Institute of LED on Silicon Substrate Nanchang University

In GaN-based green light-emitting diodes（LEDs） with and without Mg-preflow before the growth of p-Al GaN electron blocking layer（EBL） are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic ***,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room *** conclusions are drawn such that the efficiency decline is probably the result of different emission *** Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the（8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to *** this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.

关键词： GaN EBL Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

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The influence of ionospheric thin shell height on TEC retrieval from GPS observation

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Research in Astronomy and Astrophysics 2016年第7期16卷 143-152页

作者： xiao-lan wang Qing-Tao Wan Guan-Yi Ma Jing-Hua Li Jiang-Tao Fan National Astronomical Observatories Chinese Academy of SciencesBeijing 100012China University of Chinese Academy of Sciences Beijing 100049China

We investigate the influence of assumed height for the thin shell ionosphere model on the Total Electron Content（TEC） derived from a small scale Global Positioning System（GPS） network. TEC and instrumental bias are determined by applying a grid-based algorithm to the data on several geomagnetically quiet days covering a 10 month period in 2006. Comparisons of TEC and instrumental bias are made among assumed heights from 250 km to 700 km with an interval of 10 km. While the TEC variations with time follow the same trend, TEC tends to increase with the height of the thin shell. The difference in TEC between heights 250 km and 700 km can be as large as～8 TECU in both daytime and nighttime. The times at which the TEC reaches its peak or valley do not vary much with the assumed heights. The instrumental biases, especially bias from the satellite, can vary irregularly with assumed height. Several satellites show a large deviation of～3 ns for heights larger than 550 km. The goodness of fit for different assumed heights is also examined. The data can be generally well-fitted for heights from 350 km to 700 km. A large deviation happens at heights lower than 350 km. Using the grid-based algorithm, there is no consensus on assumed height as related to data fitting. A thin shell height in the range 350-500 km can be a reasonable compromise between data fitting and peak height of the ionosphere.

关键词： Radiowave propagation Ionospheric TEC Ionospheric height GPS observation Instrumental bias

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Effect of Barrier Temperature on Photoelectric Properties of Ga N-Based Yellow LEDs

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Chinese Physics Letters 2020年第3期37卷 78-80页

作者： Jia-Ming Zeng xiao-lan wang Chun-lan Mo Chang-Da Zheng Jian-Li Zhang Shuan Pan Feng-Yi Jiang National Engineering Technology Research Center for LEDs on Si Substrates Nanchang UniversityNanchang 330096

The effect of growth temperature of barriers on photoelectric properties of Ga N-based yellow light emitting diodes(LEDs)is *** is found that as the barrier temperature increases,the crystal quality of multiquantum wells(MQWs)and the quality of well/barrier interface are improved,and the quantum well is thermally annealed,so that the indium atoms in the quantum well migrate to the equilibrium position,reducing the phase separation of the quantum well and improving the crystal quality of quantum wells(QWs).However,the external quantum efficiency(EQE)of the samples begins to decrease when raising the barrier temperature even *** explanation may be that the higher barrier temperature destroys the local state in the quantum well and reduces the well/barrier interface ***,a suitable barrier temperature is proposed,contributing to the improvement of the luminous efficiency of the yellow LEDs.

关键词： quantum barrier yellow

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Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si(111)

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Chinese Physics Letters 2018年第5期35卷 115-118页

作者： Xi-xia Tao Chun-lan Mo Jun-lin Liu Jian-li Zhang xiao-lan wang xiao-ming Wu Long-quan Xu Jie Ding Guang-xu wang Feng-yi Jiang National Institute of LED on Silicon Substrate Nanchang University Nanchang 330047 Nanchang Yellow Green Lighting Company Limited Nanchang 330047

A blue emission originated from In GaN/GaN superlattice（SL） interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells（QWs）, revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths： via the flat c-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.

关键词： In GaN

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Aging mechanism of GaN-based yellow LEDs with V-pits

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Chinese Physics B 2019年第6期28卷 384-388页

作者： Tian-Ran Zhang Fang Fang xiao-lan wang Jian-Li Zhang xiao-Ming Wu Shuan Pan Jun-Lin Liu Feng-Yi Jiang National Institute of LED on Silicon Substrate Nanchang University

GaN-based yellow light-emitting diodes(LEDs) on Si substrates are aged at a direct current density of 50 A/cm^2 for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm^2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.

关键词： GaN-based yellow LED aging mechanisms V-pits

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Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates

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Chinese Physics Letters 2018年第9期35卷 90-94页

作者： Qing-feng Wu Sheng Cao Chun-lan Mo aian-li Zhang xiao-lan wang Zhi-jue Quan Chang-da Zheng xiao-ming Wu Shuan Pan Guang-xu wang Jie Ding Long-quan Xu aun-lin Liu Feng-yi Jiang National Institute of LED on Si Substrate Nanchang University

Effect of hydrogen （142） treatment during the GaN barrier growth on the electroluminescence performance of green InGaN/GaN single-quantum-well light-emitting diodes （LEDs） grown on Si substrates is experimentally investigated. We prepare two LED samples with different carrier gas compositions during the growth of GaN barrier. In the H2 free LED, the GaN barrier is grown in full nitrogen （N2） atmosphere. For the other H2 treated LED, a mixture of N2 and H2 was used as the carrier gas. It is observed that V-shaped pits decrease in size after H2 treatment by means of the scanning electron microscope. Due to the fact that the p n junction interface would be closer to the p-GaN as a result of smaller V-shaped pits, the tunneling barrier for holes to inject into the InGaN quantum well would become thicker after tt2 treatment. Hence, the external quantum efficiency of the H2 treated LED is lower compared to the H2 free LED. However, LEDs would exhibit a better leakage behavior after H2 treatment during the GaN barrier growth because of more effective blocking of the threading dislocations as a result of the H2 etching at V-shaped pits.

关键词： GaN Si

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THE REDUCTION OF 4,4-DISUBSTTTUTED 3-OXABICYCLO[3.1.0]HEXAN-2-ONE

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Chinese Chemical Letters 1992年第10期3卷 773-774页

作者： Jie You XUE Shi Xiong TANG Fan WU Yu Rong CAO xiao lan wang Department of Chemistry Nankai UniversityTianjin 300071

Reduction of the title compounds with LiAIH_4 or DIBAL (diisobutyl aluminium hydride) leads to the formation of 2-(disubstituted hydroxymethyl)cyclopropanemethanol (2)or 4,4-disubstituted 3-oxabicyclo[3.1.0] hexan-2-o... 详细信息

关键词： THE REDUCTION OF 4,4-DISUBSTTTUTED 3-OXABICYCLO[3.1.0]HEXAN-2-ONE THF

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