Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits
Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits作者机构：National Institute of LED on Silicon SubstrateNanchang University
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2018年第35卷第2期
页 面：88-92页
核心收录：
基 金：Supported by the National Key R&D Program of China under Grant Nos 2016YFB0400600 and 2016YFB0400601 the State Key Program of the National Natural Science of China under Grant No 61334001 the Key R&D Program of Jiangxi Province under Grant No 20165ABC28007 the Natural Science Foundation of Jiangxi Province under Grant No 20151BAB207053 the National Natural Science Foundation of China under Grant No 21405076
主 题：GaN EBL Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits
摘 要：In GaN-based green light-emitting diodes（LEDs） with and without Mg-preflow before the growth of p-Al GaN electron blocking layer（EBL） are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic ***,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room *** conclusions are drawn such that the efficiency decline is probably the result of different emission *** Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the（8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to *** this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.
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