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Review on metal halide perovskite-based optoelectronic synapses

Photonics Research 2023年第5期11卷 787-807页

作者： XITONG HONG xingqiang liu LEI LIAO XUMING ZOU Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China State Key Laboratory for Chemo/Biosensing and Chemometrics College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

With the progress of both photonics and electronics,optoelectronic synapses are considered potential candidates to challenge the von Neumann bottleneck and the field of visual bionics in the era of big *** are also regarded as the basis for integrated artificial neural networks(ANNs)owing to their flexible optoelectronic tunable properties such as high bandwidth,low power consumption,and high-density *** the recent years,following the emergence of metal halide perovskite(MHP)materials possessing fascinating optoelectronic properties,novel MHP-based optoelectronic synaptic devices have been exploited for numerous applications ranging from artificial vision systems(AVSs)to neuromorphic ***,we briefly review the application prospects and current status of MHP-based optoelectronic synapses,discuss the basic synaptic behaviors capable of being implemented,and assess their feasibility to mimic biological ***,we focus on the two-terminal optoelectronic synaptic memristors and three-terminal transistor synaptic phototransistors(SPTs),the two essential apparatus structures for optoelectronic synapses,expounding their basic features and operating ***,we summarize the recent applications of optoelectronic synapses in neuromorphic systems,including neuromorphic computing,high-order learning behaviors,and neuromorphic vision systems,outlining their potential opportunities and future development directions as neuromorphic devices in the field of artificial intelligence(AI).

关键词： artificial optoelectronic apparatus

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3D打印微孔钛(钽)假体重建下肢骨髓炎致大段骨缺损的疗效分析

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中华创伤骨科杂志 2024年第3期26卷 247-254页

作者：杨银徐永清李刚刘华洪建斌童伟刘兴强范新宇解放军联勤保障部队第九二〇医院骨科昆明650032 大理大学临床医学院大理671000 大理白族自治州人民医院骨科大理671000

目的探讨3D打印微孔钛(钽)假体重建下肢骨髓炎致大段骨缺损的疗效。方法回顾性分析2020年1月至2022年5月期间解放军联勤保障部队第九二〇医院骨科收治的18例下肢骨髓炎致大段骨缺损患者资料。男10例,女8例;年龄(45.3±14.1)岁;骨缺损侧... 详细信息

目的探讨3D打印微孔钛(钽)假体重建下肢骨髓炎致大段骨缺损的疗效。方法回顾性分析2020年1月至2022年5月期间解放军联勤保障部队第九二〇医院骨科收治的18例下肢骨髓炎致大段骨缺损患者资料。男10例,女8例;年龄(45.3±14.1)岁;骨缺损侧别:左侧13例,右侧5例;骨缺损部位:股骨11例,胫骨7例。骨髓炎病程为1.0(1.0,3.5)年。骨缺损长度为8.35(6.50,9.84)cm。采用个性化3D打印微孔钛(钽)假体修复骨髓炎病灶清除术后大段骨缺损。术后观察患者的伤口愈合情况,采用Paley感染性骨缺损骨愈合评价标准、疼痛视觉模拟评分(VAS)、下肢功能量表(LEFS)及影像学检查综合评定患者的疗效。结果 18例患者术后获(12.2±0.3)个月随访。1例患者术后2个月发生伤口感染,微孔钛假体取出后行Ilizarov骨搬运术治疗;其余17例患者术后伤口均愈合良好。末次随访时18例患者的疼痛VAS评分为2.0(1.0,4.0)分,显著低于术前[(6.1±2.3)分];LEFS评分为54.00(34.50,69.25)分,显著高于术前[18.50(9.00,26.50)分],差异均有统计学意义(P<0.05)。末次随访时根据Paley感染性骨缺损骨愈合评价标准评定骨愈合情况:优16例,良1例,差1例;骨断端与假体整合良好。结论 3D打印微孔钛(钽)假体重建下肢骨髓炎致大段骨缺损的疗效良好,具有减轻患者疼痛、恢复患者肢体功能等优势。

关键词：下肢骨髓炎假体和植入物钛钽大段骨缺损 3D打印技术

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Ultrahigh gain hot-electron tunneling transistor approaching the collection limit

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Science China(Information Sciences) 2023年第6期66卷 307-308页

作者： Jun LIN Pengfei LUO Xinpei DUAN Wujun ZHANG Chao MA Tong BU Wanhan SU Bei JIANG Guoli LI Xuming ZOU Ting YU Lei LIAO xingqiang liu Faculty of Physics and Electronic Science Hubei University State Key Laboratory for Chemo/Biosensing and Chemometrics College of Semiconductors (College of Integrated Circuits)Hunan University School of Physics and Technology Wuhan University

A hot-electron transistor(HET) is a unipolar and majority carrier device with voltage-controlled transport of ballistic hot electrons,and the monochromatic high-energy hot electrons are afforded by the tunnel and filter oxide *** injected hot electrons from the emitter transit through the tunnel barrier with a width below the carrier mean free path(MFP) into the base region and then cross the filter barrier and are finally collected by the collector.

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Promoting the optoelectronic and ferromagnetic properties of Cr_(2)S_(3)nanosheets via Se doping

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Science China(Physics,Mechanics & Astronomy) 2022年第7期65卷 138-146页

作者： Xinyun Zhou Chang liu Lingting Song Hongmei Zhang Ziwei Huang Chenglin He Bailing Li Xiaohui Lin Zucheng Zhang Shun Shi Dingyi Shen Rong Song Jia Li xingqiang liu Xuming Zou Le Huang Lei Liao Xidong Duan Bo Li School of Physics and Electronics College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China Key Laboratory of Nondestructive Testing(Ministry of Education) Nanchang Hangkong UniversityNanchang 330063China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan UniversityChangsha 410082China School of Materials and Energy Guangdong University of TechnologyGuangzhou 510006China Shenzhen Research Institute of Hunan University Shenzhen 518063China Research Institute of Hunan University in Chongqing Chongqing 401120China

Doping can change the band structure of semiconductors,thereby affecting their electrical,optical,and magnetic *** this study,we describe the synthesis of two-dimensional(2D)Se-doped Cr_(2)S_(3)(Se-Cr_(2)S_(3))nanosheets using the chemical vapor deposition *** these semiconductor nanosheets,the Se doping concentration can be controlled by tuning the Se/S mass ratio in the *** the doping concentrations of 10.05%and 2.05%,the room temperature conductivity and mobility were increased by nearly 4 and 2 orders of magnitude,*** addition,the response time of an ultrathin Se-Cr_(2)S_(3)photodetector was 200 times shorter than that of an undoped Cr_(2)S_(3)nanosheet photodetector.4.07%-Se-Cr_(2)S_(3)nanosheets show ferrimagnetic behavior with a Curie temperature of~200 K,which is 80 K higher than that of undoped Cr_(2)S_(3)nanosheets.A density functional theory calculation indicated that the Se doping can induce the formation of intercalated Cr vacancies in SeCr_(2)S_(3)and enhance its metallic *** results demonstrated that Se-Cr_(2)S_(3)has significant potential in future electronic,optoelectronic,and spintronic devices.

关键词： two-dimensional materials Cr_(2)S_(3)nanosheets doping optoelectronics ferromagnetism

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Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions

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Nano Research 2020年第8期13卷 2085-2090页

作者： Xu Zhao Peng Chen xingqiang liu Guoli Li Xuming Zou Yuan liu Qilong Wu Yufang liu Woo Jong Yu Lei Liao Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsChangsha410082China Henan Normal University School of PhysicsXinxiang453007China Department of Electronic and Electrical Engineering Sungkyunkwan UniversitySuwon440-746Republic of Korea

Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from *** this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector *** monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling,which are accelerated and shifted to the collector *** devices exhibit a high current on-off ratio of>105 and a high current density(JC)of∼1,000 A/cm2 at the same ***,this work demonstrates a common-emitter current gain(β)value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron ***,the temperature dependent performance is investigated,and theβvalue of 1,613 is obtained at 150 ***,this work presents the potential of 2D based transistors for high-performance applications.

关键词： bipolar junction transistor hot electron van der Waals heterostructure current gain

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Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer

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Nano Research 2019年第2期12卷 463-468页

作者： Junchi liu Xiao liu Zhuojun Chen Lili Miao xingqiang liu Bo Li Liming Tang Keqiu Chen Yuan liu Jingbo Li Zhongming Wei Xidong Duan Department of Applied Physics School of Physics and Electronics Hunan University Changsha 410082 China Hunan Key Laboratory of two dimensional materials Department of Applied Physics School of Physics and Electronics Hunan University Changsha 410082 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100083 China Hunan Key Laboratory of two dimensional materials State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 China

Doping, which is the intentional introducti on of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we prese nt high-quality two-dime nsional SnS2 nano sheets with well-controlled Sb dopi ng concen tration via direct vapor growth approach and following micromechanical cleavage process. X-ray photoelectro n spectroscopy (XPS) measureme nt dem on strates that Sb contents of the doped samples are approximately 0.22%, 0.34% and 1.21%, respectively, and doping in duces the upward shift of the Fermi level with respect to the pristi ne SnS2. Tran smissio n electro n microscopy (TEM) characterizatio n exhibits that Sb-doped SnS2 nano sheets have a high-quality hexagonal symmetry structure and Sb element is uniformly distributed in the nano sheets. The phototra nsistors based on the Sb-doped SnS2 mono layers show n-type behavior with high mobility which is one order of magn itude higher than that of pristi ne SnS2 phototra nsistors. The photorespo nsivity and exter nal quantum efficiency (EQE) of Sb-S nS2 mono layers phototra nsistors are approximately three orders of magnitude higher than that of pristine SnS2 phototransistor. The results suggest that the method of reducing Shottky barrier width to achieve high mobility and photoresp on sivity is effective, and Sb-doped SnS2 mono layer has significant potential in future nanoelectronic and optoelectronic applications.

关键词： two-dimensional doping Schottky barrier width SnS2 optoelectronics

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溶剂热合成可调控氧空位的Bi_(2)MoO_(6)纳米晶及其光催化氧化制喹啉和抗生素降解

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Chinese Journal of Catalysis 2022年第2期43卷 472-484页

作者：刘珍田坚余长林樊启哲刘兴强广东石油化工学院化学工程学院环境科学与工程学院岭南现代农业科学与技术广东省实验室茂名分中心广东茂名525000 哈尔滨工业大学(深圳)理学院城市水资源与水环境国家重点实验室广东深圳518055 厦门大学嘉庚学院环境科学与工程学院河口生态安全与环境健康福建省高校重点实验室福建漳州363105

近年来,半导体光催化在环境净化和有机合成领域的研究引起了广泛的重视.其中,在有机合成领域中,光催化技术已经应用在醇类、环己烷以及芳香族化合物的选择性氧化研究.而另一类具有特殊结构的有机物——N-杂环芳烃,在药物化学和材料科学... 详细信息

近年来,半导体光催化在环境净化和有机合成领域的研究引起了广泛的重视.其中,在有机合成领域中,光催化技术已经应用在醇类、环己烷以及芳香族化合物的选择性氧化研究.而另一类具有特殊结构的有机物——N-杂环芳烃,在药物化学和材料科学中具有重要意义.而传统用于合成N-杂化芳烃的脱氢催化氧化反应通常需要高温高压的苛刻环境,传统方法通常还需要使用贵金属催化剂,这也增加了N-杂化芳烃的合成成本;另外,如果合成是均相催化过程,则催化剂难以实现回收利用.因此,开发室温常压条件下的非贵金属多相光催化技术具有巨大的应用前景.本文以能够被可见光驱动的钼酸铋半导体为催化剂,利用氧缺陷策略来提升钼酸铋的光催化氧化性能.不同于传统氧缺陷制备方法(氢气还原热处理、离子掺杂等),本文采用一种低成本的乙二醛辅助溶剂热的方法合成具有可调控的含氧空位Bi_(2)MoO_(6)催化剂(OVBMO).通过X射线粉末衍射(XRD)、扫描电镜、透射电镜、紫外可见漫反射吸收光谱、氮气物理吸附脱附、X射线光电子能谱(XPS)、电子自旋共振光谱、光致发光光谱及电化学测试等技术对制备的OVBMO材料进行了物理化学性质及能带研究.XPS,XRD,Raman和FT-IR结果表明,氧空位存在于[Bi_(2)O_(2)]^(2+)和MoO_(6)八面体的层间.紫外可见漫反射结果表明,随着氧空位的引入,Bi_(2)MoO_(6)的光吸收范围扩大,带隙变窄.结合莫特肖特基和VBXPS分析获得OVBMO的能带位置,发现氧空位的存在不仅会导致禁带中出现缺陷带能级,还会导致价带顶位置上移,促进光生空穴的迁移.PL和电化学结果表明,氧空位的存在使得载流子浓度、载流子的分离能力与界面电荷迁移能力都有较大提升,这是因为氧空位引入的缺陷能级可以浅势捕获电子,抑制光催化剂中的电子与空穴的复合,改变化学反应的速率.同时,氧空位有助于捕获分子氧,分子氧与捕获的光生电子发生反应,产生更多的超氧自由基(·O_(2))和空穴(h^(+)),从而极大地提升光催化剂的氧化性能.因此,OVBMO在1,2,3,4-四氢喹啉脱氢氧化产生喹啉及系列抗生素(环丙沙星、四环素、盐酸土霉素)的降解反应中,表现出较好的光催化氧化性能.结合多种表征分析,本文还进一步阐明了OVBMO催化剂将1,2,3,4-四氢喹啉脱氢氧化为喹啉的自由基参与的多相催化反应机理.

关键词： Bi_(2)MoO_(6)纳米晶体氧空位光催化氧化性能喹啉生产抗生素降解

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High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure

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Nano Research 2019年第2期12卷 339-344页

作者： Xiao liu Guangzhuang Sun Peng Chen Junchi liu Zhengwei Zhang Jia Li Huifang Ma Bei Zhao Ruixia Wu Weiqi Dang Xiangdong Yang Chen Dai Xuwan Tang Zhuojun Chen Lili Miao xingqiang liu Bo Li Yuan liu Xidong Duan Department of Applied Physics School of Physics and Electronics Hunan University Changsha 410082 China State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 China

Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties. Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on S1O2/S1 substrate, the thick ness of Sb nan osheet on WSe2 can be reduced effectively to mono layer. We con struct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures. Electrical transport measurements indicate that the photodiode show obvious rectifying effect. Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW. The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics.

关键词： two-dimensional asymmetric electrode photodiode van der Waals (vdWs) heterostructure optoelectronics

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Frequency Regulation of VSC-MTDC System with Offshore Wind Farms

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Journal of Modern Power Systems and Clean Energy 2024年第1期12卷 275-286页

作者： Haoyu liu Chongru liu North China Electric Power University Beijing 102206China

Frequency regulation of voltage source converter-based multi-terminal high-voltage direct current(VSC-MTDC)system with offshore wind farms enhances the frequency stability by compensating the power for a disturbed AC ***,it is difficult to reasonably allocate frequency-regulation resources due to a lack of coordination mechanisms between wind farms and the MTDC ***,it is difficult for the frequency control of the wind farms to manage changes in wind speed;and the risk of wind-turbine stalls is ***,based on the kinetic energy of wind turbines and the power margin of the converters,the frequency-regulation capability of wind turbines is evaluated,and a dynamic frequency-support scheme considering the real-time frequency-support capability of the wind turbines and system frequency evolution is proposed to improve the frequency-support performance.A power adaptation technique at variable wind speeds is developed;the active power in the frequency-support stage and restoration stage is switched according to the wind speed.A hierarchical zoning frequency-regulation scheme is designed to use the frequency-regulation resources of different links in the MTDC system with wind *** simulation results show that the novel frequency-regulation strategy maintains frequency stability with wind-speed changes and avoids multiple frequency dips.

关键词： Wind generation voltage source converter-based multi-terminal high-voltage direct current(VSC-MTDC) frequency regulation cooperative control adaptive control variable wind speed

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A Novel Design of a Pre-separation Panel Structure to Protect Against the Impact of an Explosion in an Aircraft Plenum Chamber

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Acta Mechanica Solida Sinica 2024年第1期37卷 166-180页

作者： Zongxing liu Xiang Yang Jun liu School of Aeronautics Northwestern Polytechnical UniversityXi'an 710072China COMAC Shanghai Aircraft Design and Research Institute Shanghai 201210China

To reduce the damage of the pressurizing panel structure of a fuselage caused by an explosion at the“least risk bomb location”in an aircraft structure,a new pre-separation panel structure was designed to resist blast ***,the dynamic strain response and morphology of impact damage of the new pre-separation panel were measured in an impact damage ***,the commercial software LS-DYNA was used to calculate the propagation of the blast shock wave,and the results were compared with empirical equations to verify the rationality of the numerical calculation ***,the fluid–structure coupling method was used to calculate the damage process of the pre-separation panel structure under the impact of an explosion wave and an impact *** calculated results were in good agreement with the test results,which showed the rationality of the calculation method and the *** residual strength of the damaged pre-separation panel was significantly higher than that of the original damaged *** results show that the new pre-separation panel structure is reasonable and has certain significance for guiding the design of plenum chambers with strong resistance to implosion for aircraft fuselages.

关键词： Pre-separation panel structure Explosive response Residual strength Aircraft plenum chamber Least risk bomb location

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