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Chinese Physics Letters 1998年第1期15卷 50-51页

作者： WU JU LI Han-xuan wang zhan-guo Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 Laboratory of Electron Microscopy Chinese Academy of SciencesBeijing 100080

It was observed with transmission electron microscopy in the In_(0.52)Al_(0.48)As/In_(x)Ga_(1-x)As/In_(0.52)Al(0.48)As/InP heterostructure that misfit dislocation lines deviate from thedirections at a certain angle depending on the indium content *** an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the Ⅲ-Ⅳ ternary compounds.

关键词： alloy As alignment

A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch

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Chinese Physics Letters 1999年第1期16卷 56-58页

作者： CHEN Yong-hai wang zhan-guo YANG Zhi-yu Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 Department of Physics the Hong Kong University of Science and TechnologyKowloonHong Kong

A new interface anisotropic potential,which is proportional to the lattice mismatch of interfaces and has no fitting parameter,has been deduced for(001)zinc-blende semiconductor *** comparison with other interface models is given for GaAs/AlAs and GaAs/InAs *** strong influence of the interface anisotropic potential on the inplane optical anisotropy of GaAs/AlGaAs low dimensional structures is demonstrated theoretically within the envelope function approximation.

关键词： interface Lattice Zinc

Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer

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Chinese Physics Letters 2011年第9期28卷 198-200页

作者： guo Yu-Bing CHEN Yong-Hai XIANG Ying QU Sheng-Chun wang zhan-guo Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesPO Box 912Beijing 100083 School of Information Engineering Guangdong University of TechnologyGuangzhou 510006

We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering(FLS)experiment for a cell with ZnO nanorod doped in only one poly(vinyl alcohol)(PVA)*** a dc voltage with a positive pole on the ZnO nanorod doped side is applied,the excited charge carriers primarily move along the transverse direction,which results in a higher diffraction ***,when the dc voltage with a negative pole on the ZnO nanorod doped side is applied,the excited charge carriers primarily move along the longitudinal direction,which leads to a lower diffraction efficiency.A largest diffraction efficiency of about 9%is achieved in the ZnO nanorod doped liquid crystal cell.

关键词： scattering Photorefractive Crystal

Mechanistic evaluation of gastro-protective effects of KangFuXinYe on indomethacin-induced gastric damage in rats

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Chinese Journal of Natural Medicines 2020年第1期18卷 47-56页

作者： LI Qi-Juan wang zhan-guo XIE Yu LIU Qiao HU Hui-Ling GAO Yong-Xiang College of Pharmacy Chengdu University of Traditional Chinese MedicineChengdu 611137China Metabonomics Synergy Innovation Laboratory School of Medicine and NursingChengdu UniversityChengdu 610106China College of Basic Medicine Chengdu University of Traditional Chinese MedicineChengdu 611137China

KangFuXinYe(KFX),the ethanol extract of the dried whole body of Periplaneta americana,is a well-known important Chinese medicine preparation that has been used to treat digestive diseases such as gastric ulcers for many years in ***,its therapeutic effect and mechanism are not yet well ***,the aim of this study was to investigate the gastroprotective effects of KangFuXinYe(KFX)in indomethacin-induced gastric *** were randomly divided into six groups as follows:control,treated with indomethacin(35 mg·kg^-1),different dosages of KFX(2.57,5.14 and 10.28 mL·kg^-1,respectively)plus indomethacin,and sucralfate(1.71 mL·kg^-1)plus *** treatment,rat serum,stomach and gastric homogenates were collected for biochemical tests and examination of histopathology *** serum was further used for metabolomics analysis to research possible *** results showed that KFX treatment alleviated indomethacin-induced histopathologic damage in rat gastric ***,its treatment significantly increased cyclooxygenase-1(COX-1),prostaglandin E2(PGE2)and epidermal growth factor(EGF)levels in rat serum and gastric ***,KFX decreased cyclooxygenase-2(COX-2)and interleukin-6(IL-6)*** metabolites were identified which intensities significantly changed in gastric damage rats,including 5-hydroxyindoleacetic acid,indoxylsulfuric acid,indolelactic acid,4-hydroxyindole,pantothenic acid,isobutyryl carnitine,3-methyl-2-oxovaleric acid,sphingosine 1-phosphate,and *** metabolic deviations came to closer to normal levels after KFX *** results indicate that KFX(10.28 mL·kg^-1)exerts protective effects on indomethacin-induced gastric damage by possible mechanisms of action(regulating tryptophan metabolism,protecting the mitochondria,and adjusting lipid metabolism,and reducing excessive indomethacin).

关键词： KangFuXinYe Indomethacin-induced gastric damage Inflammation Metabonomic analysis

Photoluminescence of Eu^(2+)Doped ZnS Nanocrystals

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Chinese Physics Letters 2000年第8期17卷 609-611页

作者： LIU Shu-man guo Hai-qing zhanG Zhi-Hua LIU Feng-Qi wang zhan-guo Laboratory of Semiconductor Materials Sciences Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871

Eu^(2+)doped ZnS nanocrystals exhibit new luminescence properties because of the enlarged energy gap of nanocrys talline ZnS host due to quantum confinement *** emission at about 520nm from Eu^(2+)doped ZnS nanocrystals at room temperature is investigated by using photoluminescence emission and excitation *** green emission with long lifetime(ms)is proposed to be a result of excitation,ionization,carriers recapture and recombination via Eu^(2+)centers in nanocrystalline ZnS host.

关键词： spectroscopy. excitation lifetime

Effect of Al_(2)O_(3)/SiO_(2) mass ratio and CaO content on viscosity and structure of slag for pyrometallurgical processing of spent automotive catalysts

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Journal of Iron and Steel Research International 2024年第3期31卷 608-621页

作者： Zhe wang Qi-long Wei Cheng-bin Shi zhan-cheng guo State Key Laboratory of Advanced Metallurgy University of Science and Technology BeijingBeijing 100083China

The effect of Al_(2)O_(3)/SiO_(2) mass ratio and CaO content on the viscosity and structure of the CaO-Al_(2)O_(3)-SiO_(2)-6MgO-1.5ZrO_(2)-1.5CeO_(2) slag was *** results show that with the increase in Al_(2)O_(3)/SiO_(2) mass ratio,the viscous flow units within the slag gradually change from Si-O-Si to Al-O-Al and ***,the substitution of Al_(2)O_(3) for SiO_(2) leads to the transformation of Si-O bonds towards weaker Al-O bonds,which weaken the bond strength of the aluminosilicate networks,thus leading to a decrease in the viscosity of *** increase in CaO content effectively promotes the depolymerization of the aluminosilicate networks,resulting in a significant decrease in the viscosity of the *** slag with Al_(2)O_(3)/SiO_(2) of 0.7-1.5 and CaO of 30 wt.%shows promise as the reference slag system for the Fe-collection smelting of spent automotive catalysts due to its good comprehensive performance.

关键词： Aluminosilicate slag Al_(2)O_(3)/SiO_(2)mass ratio CaO content Viscosity Slag structure

Lateral Ordered InGaAs Self-organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy

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Chinese Physics Letters 1999年第1期16卷 68-70页

作者： XU Huai-zhe JIANG Wei-hong XU Bo ZHOU Wei wang zhan-guo Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083

Self-assembled In_(x)Ga_(l-x)As quantum dots(QDs)on(311)and(100)GaAs surfaces have been grown by conventional solid source molecular beam *** ordering alignment of In_(x)Ga_(l-x)As QDs with lower In content around 0.3 has been observed on As-terminated(B type)*** direction of alignment orientation of the QDs formation differs from the direction of misorientation of the(311)B surface,and is strongly dependent upon the In content *** ordering alignment becomes significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on(100)and(311)Ga-terminated(A type)substrates.

关键词： Epitaxy alignment

Research and Development of Electronic and Optoelectronic Materials in China

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Journal of Semiconductors 2000年第11期21卷 1041-1049页

作者： wang zhan\|guo(Z.G.wang (Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing\ 100083, China) Lab. of Semicond. Mater. Sci. Inst. of Semiconductors Chinese Acad. of Sci. Beijing 100083 China

A review on the research and development of electronic and optoelectronic materials in China, including the main scientific activities in this field, is presented. The state\|of\|the\|arts and prospects of the electronic and optoelectronic materials in China are briefly introduced, such as those of silicon crystals, compound semiconductors, synthetic crystals,especially nonlinear optical crystals and rare\|earth permanent magnets materials, etc., with a greater emphasis on Chinese scientist’s contributions to the frontier area of nanomaterials and nanostructures in the past few years. A new concept of the trip chemistry proposed by *** Zhongfan from Peking University has also been described. Finally the possible research grants and the national policy to support the scientific research have been discussed.

关键词：电子材料光电子材料压力材料研究进展

Design of tunneling injection quantum dot lasers

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Optoelectronics Letters 2007年第1期3卷 4-6页

作者： JIA guo-zhi YAO Jiang-hong SHU Yong-chun wang zhan-guo Key Lab. for Weak-Light Nonlinear Photonics Materials of Education Ministry of China and Key Lab. of Photonics Materials and Technology for Information Science of Tianjin City TEDA Applied Physics School Nankai University Tianjin 300475 China Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

To implement high quality tunneling injection quantum dot lasers, effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability, tun- neling time and carriers thermal escape time from the quantum well. The calculation results show that with increas- ing of the ground-state energy level in quantum well, the tunneling probability increases and the tunneling time decreases, while the thermal escape time decreases because the ground-state energy level is shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well.

关键词：隧道注入量子点激光器设计半导体激光器

Measurement of GaN/Ge（001） Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

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Chinese Physics Letters 2010年第6期27卷 183-186页

作者： guo Yan LIU Xiang-Lin SONG Hua-Ping YANG An-Li ZHENG Gao-Lin WEI Hong-Yuan YANG Shao-Yan ZHU Qin-Sheng wang zhan-guo Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083

X-ray photoelectron spectroscopy has been used to measure the valence band offset （VBO） at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 ±0.19 eV, according to the relationship between the conduction band offset AEc and the valence band offset △Ev：△Ec =EgGaN -EgGe - △Ev, and taking the room-temperature band-gaps as 3.4 and 0.67eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6±0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.

关键词： GALLIUM nitride HETEROJUNCTIONS X-ray photoelectron spectroscopy SEMICONDUCTOR junctions CONDUCTION band TEMPERATURE effect ENERGY gaps (Physics)