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science china(information sciences) 2010年第8期53卷 1566-1573页

作者： wang yu , li bin & yuan bo department of electronic science and technology, school of information science and technology, university of science and technology of china, hefei 230027, china 1. department of electronic science and technology School of Information Science and Technology University of Science and Technology of China Hefei 230027 China

Economic load dispatch (ELD) is an important optimization task in power systems. In the previous works, various researchers attempted to address this problem by both mathmatical and heuristic optimization algorithms. However, there are still two practically important issues that have not attracted sufficient attention: 1) the stability of these algorithms cannot be effectively ensured; 2) the performance of these algorithms on large scale ELD optimization tasks remains to be unsatisfactory. CLPSO is an effective global optimization algorithm. To strengthen the convergence ability of CLPSO, the sequential quadratic programming (SQP) is introduced into it. This results in a new algorithm hybrid of comprehensive learning particle swarm optimization and sequential quadratic programming (SQP-CLPSO). To assess the performance of SQP-CLPSO, it is compared with several state-of-the-art evolutionary algorithms (EAs) on the classical ELD optimization problems. Experimental results show that SQP-CLPSO has very good abilities of convergence, diversity maintainence and scalability, which make it suitable for complex ELD problems.

关键词： particle swarm optimization comprehensive learning particle swarm optimization sequential quadratic programming local search power systems economic load dispatch

Giant negative electrocaloric effect measured by indirect method in X-ray irradiated P(VDF-TrFE)films

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Journal of Materiomics 2024年第3期10卷 624-631页

作者： bo li bin Yang Hong Zhang Jiajia Zhang Qianjin wang Weishu liu department of Materials science and Engineering Southern University of Science and TechnologyShenzhenGuangdong 518055China Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and TechnologyShenzhenChina College of Physics and electronic information Yunnan Normal UniversityYunnan Kunming 650500China The science and technology on Reliability Physics and Application of electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

Flexible solid-state cooling devices with high efficiency are attracted to ferroelectric polymers with excellent negative electrocaloric(EC)*** is challenging to obtain a large negative EC effect in ferroelectric polymers due to the lack of tunable techniques.A giant negative EC response was obtained in the poly(vinylidene fluoride-trifluoroethylene)copolymers(P(VDF-TrFE),70/30,in mole ratio)irra-diated with high-energy *** irradiated P(VDF-TrFE)films showed an adiabatic temperature change of-13.5 K at 40 MV/m under a dose of 5 Mrad(1 Mrad=10^(4) J/kg)obtained by the indirect *** significant negative EC effect is attributed to the enhancement of crystalline due to the entry of polymer molecules into the amorphous to crystalline structure and the reduction of heat ca-pacity due to the increase of *** addition,X-ray irradiation improves the dielectric coefficient from 15 to *** research indicates that irradiation can modify the negative EC properties of ferro-electric polymers for solid-state cooling.

关键词： Negative electrocaloric effects X-rays radiation P(VDF-TrFE)films

Long-wave infrared emission properties of strain-balanced InAs/In_(x)Ga_(1-x)As_(y)Sb_(1-y)type-Ⅱsuperlattice on different substrates

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Rare Metals 2024年第7期43卷 3194-3204页

作者： Chao Shi Xuan Fang Hong-bin Zhao Deng-Kui wang Xi Chen Dan Fang Dong-bo wang Xiao-Hua wang Jin-Hua li State Key Laboratory of High Power Semiconductor Lasers School of PhysicsChangchun University of Science and TechnologyChangchun 130022China State Key Laboratory of Advanced Materials for Smart Sensing China General Research Institute for Nonferrous MetalsBeijing 100088China department of Opto-electronic information science School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin 150001China

High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic *** the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic *** this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates *** grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'***,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more *** addition,the optical properties of superlattices grown on different substrates are discussed *** of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared ***,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.

关键词： Photoluminescence Alloy compositions fluctuations InAs(Sb)/In_(x)Ga_(1-x)As_(y)Sb_(1-y) Type-Ⅱsuperlattice Substrate

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

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Chinese Physics B 2015年第8期24卷 613-618页

作者：刘远陈海波刘玉荣王信恩云飞李斌陆裕东 science and technology on Reliability Physics and Application of electronic Component Laboratory CEPREI No. 58th Research Institute of china electronics technology Group Corporation school of electronic and information Engineering South China University of Technology Xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences

Low frequency noise behaviors of partially depleted silicon-on-insulator(PDSOI) n-channel metal-oxide semiconductors(MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10-10V2·Hz-1and 2.7×10-8V2·Hz-1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017cm-3·e V-1to 6.16×1018cm-3·e V-1. Based on carrier mobility fluctuation theory, the extracted average Hooge’s parameter in these devices increases from 3.92×10-5to 1.34×10-2after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are-10.82 V and-31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

关键词： silicon on insulator ion implantation ionizing radiation low frequency noise

The In-Flight Realtime Trigger and Localization Software of GECAM

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Research in Astronomy and Astrophysics 2024年第10期24卷 11-24页

作者： Xiao-yun Zhao Shao-lin Xiong Xiang-Yang Wen Xin-Qiao li Ce Cai Shuo Xiao Qi Luo Wen-Xi Peng Dong-Ya Guo Zheng-Hua An Ke Gong Jin-yuan liao Yan-Qiu Zhang yue Huang Lu li Xing Wen Fei Zhang Jing Duan Chen-Wei wang Dong-li Shi Peng Zhang Qi-bin Yi Chao-Yang li Yan-bing Xu Xiao-Hua liang Ya-Qing liu Da-li Zhang Xi-Lei Sun Fan Zhang Gang Chen Huan-yu wang Sheng Yang Xiao-Jing liu Min Gao Mao-Shun li Jin-Zhou wang Xing Zhou Yi Zhao wang-Chen Xue Chao Zheng Jia-Cong liu Xing-bo Han Jin-ling Qi Jia Huang Ke-Ke Zhang Can Chen Xiong-Tao Yang Dong-Jie Hou yu-Sa wang Rui Qiao Xiang Ma Xiao-bo li Ping wang Xin-Ying Song li-Ming Song Shi-Jie Zheng bing li Hong-Mei Zhang yue Zhu Wei Chen Jian-Jian He Zhen Zhang Jin Hou Hong-Jun wang Yan-Chao Hao Xiang-yu wang Zong-yuan Yang Zhi-Long Wen Zhi Chang yuan-yuan Du Rui Gao Xiao-Fei Lan Yan-Guo li Gang li Xu-Fang li Fang-Jun Lu Hong Lu bin Meng Feng Shi Hui wang Hui-Zhen wang yu-Peng Xu Jia-Wei Yang Xue-Juan Yang Shuang-Nan Zhang Chao-yue Zhang Cheng-Mo Zhang Zhi-Cheng Tang Cheng Cheng Key Laboratory of Particle Astrophysics Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China university of Chinese Academy of sciences Chinese Academy of SciencesBeijing 100049China school of information science and technology Southwest Jiaotong UniversityChengdu 611756China Key Laboratory of Stellar and Interstellar Physics and department of Physics Xiangtan UniversityXiangtan 411105China Physics and Space science College China West Normal UniversityNanchong 637002China department of Astronomy Beijing Normal UniversityBeijing 100875China Innovation Academy for Microsatellites of CAS Shanghai 201203China Changchun university of science and technology Changchun 130022China Chinese Academy of sciences South America Center for Astronomy National Astronomical ObservatoriesCASBeijing 100101China

Realtime trigger and localization of bursts are the key functions of GECAM,an all-sky gamma-ray monitor launched on 2020 December *** developed a multifunctional trigger and localization software operating in the CPU of the GECAM electronic *** onboard software has the following features:high trigger efficiency for real celestial bursts with a suppression of false triggers caused by charged particle bursts and background fluctuation,dedicated localization algorithm optimized for both short and long bursts,and low time latency of the trigger information which is downlinked through the Global Short Message Communication service of the global BeiDou navigation *** paper provides a detailed description of the design and development of the trigger and localization software system for *** covers the general design,workflow,the main functions,and the algorithms used in the *** paper also includes on-ground trigger tests using simulated gamma-ray bursts generated by a dedicated X-ray tube,as well as an overview of the performance for real celestial bursts during its in-orbit operation.

关键词： telescopes instrumentation:detectors methods:observational

Clinical significance of upregulated Rho GTPase activating protein 12 causing resistance to tyrosine kinase inhibitors in hepatocellular carcinoma

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World Journal of Gastrointestinal Oncology 2024年第10期16卷 4244-4263页

作者： Xiao-Wei wang yu-Xing Tang Fu-Xi li Jia-Le wang Gao-Peng Yao Da-Tong Zeng yu-Lu Tang Bang-Teng Chi Qin-Yan Su lin-Qing Huang Di-yuan Qin Gang Chen Zhen-bo Feng Rong-Quan He department of Pathology The First Affiliated Hospital of Guangxi Medical UniversityNanning 530021Guangxi Zhuang Autonomous RegionChina department of Pathology Red Cross Hospital of Yulin CityYulin 537000Guangxi Zhuang Autonomous RegionChi department of Medical Oncology The First Affiliated Hospital of Guangxi Medical UniversityNanning 530021Guangxi Zhuang Autonomous RegionChina department of Computer science and technology School of Computer and Electronic InformationGuangxi UniversityNanning 530004Guangxi Zhuang Autonomous RegionChina

BACKGROUND Hepatocellular carcinoma(HCC)is a major health challenge with high incidence and poor survival rates in *** therapies,particularly tyrosine kinase inhibitors(TKIs),are the first-line treatment for advanced HCC,but resistance is *** Rho GTPase family member Rho GTPase activating protein 12(ARHGAP12),which regulates cell adhesion and invasion,is a potential therapeutic target for overcoming TKI resistance in ***,no studies on the expression of ARHGAP12 in HCC and its role in resistance to TKIs have been *** To unveil the expression of ARHGAP12 in HCC,its role in TKI resistance and its potential associated *** This study used single-cell RNA sequencing(scRNA-seq)to evaluate ARHGAP12 mRNA levels and explored its mechanisms through enrichment *** was used to investigate focal adhesion(FA)pathway *** integrated bulk RNA data(RNA-seq and microarray),immunohistochemistry and proteomics to analyze ARHGAP12 mRNA and protein levels,correlating with clinical *** assessed ARHGAP12 expression in TKI-resistant HCC,integrated conventional HCC to explore its mechanism,identified intersecting FA pathway genes with scRNA-seq data and evaluated its response to TKI and *** ARHGAP12 mRNA was found to be highly expressed in malignant hepatocytes and to regulate *** malignant hepatocytes in high-score FA groups,MDK-[integrin alpha 6(ITGA6)+integrinβ-1(ITGB1)]showed specificity in ligand-receptor ***12 mRNA and protein were upregulated in bulk RNA,immunohistochemistry and proteomics,and higher expression was associated with a worse ***12 was also found to be a TKI resistance gene that regulated the FA ***1 was identified as a crossover gene in the FA pathway in both scRNA-seq and bulk *** expression of ARHGAP12 was associated with adverse reactions to sorafenib,cabozantinib and regorafenib,but not to *** ARHGAP12 expre

关键词： Hepatocellular carcinoma Focal adhesion Tyrosine kinase inhibitor Rho GTPase activating protein 12 Drug resistance Molecular mechanism Biomarker

Two-dimensional materials for future information technology: status and prospects

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science china(information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao yu Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng li Taotao li Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN yuhan FENG yu FU Jingshu GUO Pengwen GUO yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia li Qian li Weisheng li Lei liAO Bilu liU Can liU Chunsen liU Guanyu liU Kaihui liU liwei liU Sheng liU yuan liU Donglin LU likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-ling REN Haowen SHU litao SUN yue SUN Quanyang TAO Zi-Ao TIAN Dong wang Hao wang Haomin wang Jialong wang Junyong wang Wenhui wang Xingjun wang Yeliang wang yuwei wang Zhenyu wang Yao WE... school of electronic science and Engineering Nanjing University school of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University school of Integrated Circuit science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences school of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China school

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

The Combined Effect of Spin-Transfer Torque and Voltage-Controlled Strain Gradient on Magnetic Domain-Wall Dynamics:Toward Tunable Spintronic Neuron

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Chinese Physics Letters 2024年第5期41卷 120-137页

作者：郁国良何鑫岩施胜宾邱阳朱明敏王嘉维李燕李元勋王杰周浩淼 College of information Engineering China Jiliang UniversityHangzhou 310018China The Key Laboratory of Electromagnetic Wave information technology and Metrology of Zhejiang Province Hangzhou 310018China department of Engineering Mechanics Zhejiang UniversityHangzhou 310027China school of electronic science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China

Magnetic domain wall(DW), as one of the promising information carriers in spintronic devices, have been widely investigated owing to its nonlinear dynamics and tunable properties. Here, we theoretically and numerically demonstrate the DW dynamics driven by the synergistic interaction between current-induced spin-transfer torque(STT) and voltage-controlled strain gradient(VCSG) in multiferroic heterostructures. Through electromechanical and micromagnetic simulations, we show that a desirable strain gradient can be created and it further modulates the equilibrium position and velocity of the current-driven DW motion. Meanwhile, an analytical Thiele's model is developed to describe the steady motion of DW and the analytical results are quite consistent with the simulation data. Finally, we find that this combination effect can be leveraged to design DW-based biological neurons where the synergistic interaction between STT and VCSG-driven DW motion as integrating and leaking motivates mimicking leaky-integrate-and-fire(liF) and self-reset function. Importantly, the firing response of the liF neuron can be efficiently modulated, facilitating the exploration of tunable activation function generators, which can further help improve the computational capability of the neuromorphic system.

关键词： tunable synergistic integrating

CEPC Technical Design Report

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Radiation Detection technology and Methods 2024年第1期8卷 I0003-I0016,1-1091页

作者： Waleed Abdallah Tiago Carlos Adorno de Freitas Konstantin Afanaciev Shakeel Ahmad Ijaz Ahmed Xiaocong Ai Abid Aleem Wolfgang Altmannshofer Fabio Alves Weiming An Rui An Daniele Paolo Anderle Stefan Antusch Yasuo Arai Andrej Arbuzov Abdesslam Arhrib Mustafa Ashry Sha Bai yu Bai Yang Bai Vipul Bairathi Csaba Balazs Philip Bambade Yong Ban Tripamo Bandyopadhyay Shou-Shan Bao Desmond P.Barber Ayse Bat Varvara Batozskaya Subash Chandra Behera Alexander Belyaev Michele Bertucci Xiao-Jun Bi yuanjie Bi Tianjian Bian Fabrizio Bianchi Thomas Biekotter Michela Biglietti Shalva Bilanishvili Deng binglin Denis bodrov Anton bogomyagkov Serge bondarenko Stewart boogert Maarten boonekamp Marcello borri Angelo bosotti Vincent boudry Mohammed boukidi Igor boyko Ivanka bozovic Giuseppe bozzi Jean-Claude Brient Anastasiia Budzinskaya Masroor Bukhari Vladimir Bytev Giacomo Cacciapaglia Hua Cai Wenyong Cai Wujun Cai Yijian Cai Yizhou Cai yuchen Cai Haiying Cai Huacheng Cai Lorenzo Calibbi Junsong Cang Guofu Cao Jianshe Cao Antoine Chance Xuejun Chang yue Chang Zhe Chang Xinyuan Chang Wei Chao Auttakit Chatrabhuti Yimin Che yuzhi Che bin Chen Danping Chen Fuqing Chen Fusan Chen Gang Chen Guoming Chen Hua-Xing Chen Huirun Chen Jinhui Chen Ji-yuan Chen Kai Chen Mali Chen Mingjun Chen Mingshui Chen Ning Chen Shanhong Chen Shanzhen Chen Shao-Long Chen Shaomin Chen Shiqiang Chen Tianlu Chen Wei Chen Xiang Chen Xiaoyu Chen Xin Chen Xun Chen Xurong Chen Ye Chen Ying Chen yukai Chen Zelin Chen Zilin Chen Gang Chen boping Chen Chunhui Chen Hok Chuen Cheng Huajie Cheng Shan Cheng Tongguang Cheng yunlong Chi Pietro Chimenti Wen Han Chiu Guk Cho Ming-Chung Chu Xiaotong Chu Ziliang Chu Guglielmo Coloretti Andreas Crivellin Hanhua Cui Xiaohao Cui Zhaoyuan Cui Brunella D'Anzi ling-yun Dai Xinchen Dai Xuwen Dai Antonio De Maria Nicola De Filippis Christophe De La Taille Francesca De Mori Chiara De Sio Elisa Del Core Shuangxue Deng Wei-Tian Deng Zhi Deng Ziyan Deng Bhupal Dev Tang Dewen Biagio Di Micco Ran Ding Siqin Dingl Yadong Ding Haiyi Dong Jianin AGH university of science and technology Faculty of Physics and Applied Computer ScienceKrakow Anhui university HefeiAnhui Applied Physics department Federal Urdu University of ArtsScience and TechnologyIslamabad Banaras Hindu university Institute of ScienceVaranasi Bandirma Onyedi Eylul university Bandirma Beihang university Beijing Beijing Computational science Research Center Beijing Beijing Conveyi LTD Beijing Beijing Glass Research Institute Co. LtdBeijing Beijing Institute of technology Beijing Beijing Normal university Beijing Brown university ProvidenceRI Budker Institute of Nuclear Physics Novosibirsk Cadi Ayyad university Laboratory of Fundamental and Applied PhysicsPolydisciplinary FacultyMarrakech Cairo university Giza Center for Theory and Computation National Tsing Hua UniversityHsinchu Central china Normal university WuhanHubei Central South university ChangshaHunan Centro de Fisica Teorica de Particulas Universidade Tecnica de LisboaLisboa Chengdu KaitengSifang Digital Radio&TV Equipment Co. LtdChengduSichuan china academy of engineering physics MianyangSichuan china building materials academy Beijing china Center of Advanced science and technology Beijing china Institute of Atomic Energy Beijing china Jiliang university HangzhouZhejiang china Nuclear Instrument CO. LTDBeijing china university of Geosciences Beijing china university of Geosciences WuhanHubei china university of Mining and technology XuzhouJiangsu china West Normal university NanchongSichuan Chongqing university Department of PhysicsChongqing Chulalongkorn university Bangkok City university of Hong Kong Department of PhysicsHong Kong Cockcroft Institute Daresbury Cornell university IthacaNY CPPM(AMU/IPhU&CNRS/INP) Marseille Dalian Minzu university DalianLiaoning Dalian university of technology Department of PhysicsDalian Deutsches Elektronen-Synchrotron DESY Hamburg Dzhelepov Laboratory of Nuclear Problems of Joint Institute for Nuclear Research(DLNP JINR) Dubna East china university Of science And Technol

The Circular Electron Positron Collider(CEPC)is a large scientific project initiated and hosted by china,fostered through extensive collaboration with international *** complex comprises four accelerators:a 30 GeV linac,a 1.1 GeV Damping Ring,a booster capable of achieving energies up to 180 GeV,and a Collider operating at varying energy modes(Z,W,H,and tt).The linac and Damping Ring are situated on the surface,while the subterranean booster and Collider are housed in a 100 km circumference underground tunnel,strategically accommodating future expansion with provisions for a potential Super Proton Proton Collider(SPPC).The CEPC primarily serves as a Higgs *** its baseline design with synchrotron radiation(SR)power of 30 MW per beam,it can achieve a luminosity of 5×10^(34)cm^(-2)s^(-1)per interaction point(IP),resulting in an integrated luminosity of 13 ab^(-1)for two IPs over a decade,producing 2.6 million Higgs *** the SR power to 50 MW per beam expands the CEPC's capability to generate 4.3 million Higgs bosons,facilitating precise measurements of Higgs coupling at sub-percent levels,exceeding the precision expected from the HL-LHC by an order of *** Technical Design Report(TDR)follows the Preliminary Conceptual Design Report(Pre-CDR,2015)and the Conceptual Design Report(CDR,2018),comprehensively detailing the machine's layout,performance metrics,physical design and analysis,technical systems design,R&D and prototyping efforts,and associated civil engineering ***,it includes a cost estimate and a preliminary construction timeline,establishing a framework for forthcoming engineering design phase and site selection *** is anticipated to begin around 2027-2028,pending government approval,with an estimated duration of 8 *** commencement of experiments and data collection could potentially be initiated in the mid-2030s.

关键词： initiated exceeding precise

InAs/InAsSb type-Ⅱ superlattice with near room-temperature long-wave emission through interface engineering

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Rare Metals 2022年第3期41卷 982-991页

作者： bo-Wen Zhang Dan Fang Xuan Fang Hong-bin Zhao Deng-Kui wang Jin-Hua li Xiao-Hua wang Dong-bo wang State Key Laboratory of High Power Semiconductor Lasers School of ScienceChangchun University of Science and TechnologyChangchun 130022China school of science and Engineering The Chinese University of Hong KongShenzhen 518172China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China department of Opto-electronic information science School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin 150001China

Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition. The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum (FWHM) of 20.5arcsec (1 arcsec=0.01592°). Strain mapping results indicated limited Sb diffusion through the As-Sb exchange process at the interface. Moreover, unlike interface states caused by the As-Sb exchange effect, this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process ((18±1) meV and (84±12) meV at different temperature ranges), which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL. Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice, it achieved detective photoluminescence (PL) signal with the center wavelength of 9μm at 250K.

关键词： InAs/InAsSb Superlattice Interface states High operation temperature emission