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当代皮肤科新课题内脏恶性肿瘤在皮肤上的表现

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当代皮肤科新课题内脏恶性肿瘤在皮肤上的表现

Cast Intermetallic Alloys and Composites Based on Them by Combined Centrifugal Casting—SHS Process

1983年

作者：（美）vladimir C andreev原高玉祥丁明伟合译

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Open Journal of Metal 2013年第2期3卷 12-24页

作者： vladimir Sanin Dmitry andreev Denis Ikornikov Vldimir Yukhvid Institute of Structural Macrokinetics and Materials Science RAS Chernogolovka Moscow Russia

This work aims to establish a scientific and engineering background in the production of cast multicomponent alloys and metalmartix composite (MMCs) via Self-Propagating High Temperature Synthesis (SHS, combustion synthesis) which is a novel process technique regarding fast and low-cost production ability. We carried out the search for reactive systems and process parameters that would ensure preparation of cast multicomponent materials in a single process. The principles and methods of the SHS thermite-type reaction processes have been investigated under high-gravity values applying loads up to 1000 g with special centrifuge set-up. In this way we expected to improve the yield of target product, remove gaseous byproducts, diminish the grain size in the product, and make product composition more uniform. The obtained results can be expected to make a theoretical background for industrial-scale manufacturing of heat-resistant intermetallic alloys, master alloys, catalysts, MMCs etc.

关键词： Metallothermic SHS Cast Alloys Intermetallic Alloys MMC Centrifugal Casting

Postglacial incision-infill cycles at the Borisoglebsk Upland: Correlations between interfluve headwaters and fluvial network

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International Soil and Water Conservation Research 2019年第2期7卷 184-195页

作者： Yuliya V.Shishkina Ekaterina V.Garankina vladimir R.Belyaev Ilya G.Shorkunov Pavel V.andreev Aleksey I.Bondar Viktoria I.Potapova Tatiana A.Verlova Faculty of Geography Department of Geomorphology and Palaeogeography and Laboratory for Soil Erosion and Fluvial ProcessesLomonosov Moscow State UniversityLeninskie Gory1Moscow 119991Russia Institute of Geography Department of Soil Geography and EvolutionRussian Academy of SciencesStaromonetnyj Lane29Moscow 119017Russia Institute of Earth Sciences of Saint-Petersburg State University St.PetersburgUniversitetskaya nab.7-9 199034Russia

The article discusses postglacial landscape transformation in the Northern Hemisphere Middle Pleistocene glaciation area located in the center of the Russian *** attempted to verify the regional paleogeographic model by reconstructing the Late Pleistocene incision-infill cycles at the Eastern Borisoglebsk Upland based on a comparison of inactive interfluves headwaters and actual fluvial network *** study was also aimed to determine the past extent of fluvial *** research of the actual and buried topography,Ethology and pedogenic properties of surface deposits was carrid out with remote sensing data interpretation,DGPS survey,and detailed description of geological cores *** study was followed by analysis of grain size,chemical and organic contents,microstructure,and numerical *** the available results,we propose a scenario of the fluvial network transformation at the Eastem Borisoglebsk Upland over the last 150 *** least four fluvial incision stages were determined while network extent has significantly changed through the Late *** can be generally associated with the regional base level decrease-Late Moscow,Late Valdai and Late Holocene and accompanying isolation of the Nero Lake terraces of 130 m,100-105 m and 95-98 *** stages were separated by landscape stability or aggradation periods those were asynchronous at the middle and upper parts of the fluvial *** main agent of initial valley infill appears to be local lacustrine sedimentation altered by alluvial and colluvial deposition towards the second half of *** landscape conditions variability emphasize the importance of comprehensive local correlations for regional retrospective models.

关键词： Interfluve headwaters Fluvial Incision-Infill Cycle Pleistocene

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掺硫硒化镓晶体在太赫兹波段的光学特性

光学精密工程 2011年第2期19卷 354-359页

作者：罗志伟古新安朱韦臻唐维聪 andreev YURY LANSKII Grigory MOROZOV Alexander ZUEV vladimir 交通大学电子物理系中国新竹30010 Institute of Monitoring of Climatic and Ecological Systems of Siberian Branch of Russian Academy of Sciences Tomsk Russia

利用太赫兹时域光谱技术测量了掺硫硒化镓（GaSe1-xSx）晶体在太赫兹波段的光学参数,包括折射系数、吸收系数等。使用自由空间电光取样法获得了太赫兹电磁波的脉冲波形,对不同硫掺杂量的硒化镓晶体进行了研究,在硫的掺杂量为0,0.01,0.14... 详细信息

利用太赫兹时域光谱技术测量了掺硫硒化镓（GaSe1-xSx）晶体在太赫兹波段的光学参数,包括折射系数、吸收系数等。使用自由空间电光取样法获得了太赫兹电磁波的脉冲波形,对不同硫掺杂量的硒化镓晶体进行了研究,在硫的掺杂量为0,0.01,0.14,0.26,0.37时,在0.22.0 THz测得了GaSe1-xSx的折射系数、吸收系数等光学参数。此外还在吸收光谱上观察到E′^（2）和E″^（2）两个声子振动模态,其强度与频率会随着硫的掺杂量而改变,且即使是微量的硫掺杂也会影响吸收光谱上的声子振动模态。最后,在相位匹配ee-e的条件下,模拟了利用锁模钛蓝宝石激光使此类晶体产生太赫兹辐射的可能性。

关键词：掺硫硒化镓晶体太赫兹辐射太赫兹时域光谱

Formation of Micro, Nano and Atomic-Level Structure of CoAIOICo-AI Cermets Prepared by Mechanical Alloying

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材料科学与工程（中英文A版） 2012年第2期2卷 121-136页

作者： Andrey andreev Aleksey Salanov Serguei Tikhov Svetlana Cherepanova vladimir Zaikovskii vladimir Usoltsev Vladislav Sadykov Olga Lapina Boreskov Institute of Catalysis SB RAS 630090 pr. Lavrentieva 5 Novosibirsk Russian Federation

Study on Stability and Efficiency of High-Power Ultrawideband Radiation Source

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Journal of Energy and Power Engineering 2012年第5期6卷 771-776页

作者： vladimir I. Koshelev Yury A. andreev Anatoly M. Efremov Boris M. Kovalchuk Vyacheslav V. Plisko Konstantin N. Sukhushin Shuhua Liu Microwave Electronics Laboratory and Pulsed Power Department Institute of High Current Electronics SB RAS Tomsk 634055Russia High Current Electronics Department at the Institute of High Technology Physics National Research Tomsk PolytechnicUniversity Tomsk 634050 Russia

Investigations are directed to the development of high-power sources ofUWB （ultrawideband） radiation based on excitation of anterma arrays with bipolar voltage pulses. In the previously designed high-power UWB sources only one bipolar pulse former and different feeder systems for pulse distribution through the array elements were used. By means of this approach, a number of UWB sources were created with the bipolar voltage pulse length ranging from 0.2 to 2 ns and effective potential of radiation ranging from 0.4 to 3 MV. The approach has got a restriction related to the electrical breakdown in a bipolar voltage pulse former. A new approach to the creation of high-power UWB sources based on a multicharmel bipolar pulse former is suggested： the number of bipolar pulse formers is equal to the number of antennas in the array. The main problem in realization of this approach is a stable operation of bipolar pulse formers in order to ensure a coherent summation of radiated pulses in the far-field zone. The result of this work is the instability of-150 ps at the pulse length of 3 ns obtained in a one-channel bipolar pulse former indicating that the suggested approach is realizable.

关键词： Monopolar pulse generator bipolar pulse former combined transmitting antenna ultrawideband radiation.

Quantum Supercurrent Transistors in Silicon Quantum Wells Confined by Superconductor Barriers

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Journal of Modern Physics 2011年第4期2卷 256-273页

作者： Nikolay T. Bagraev Edward Yu. Danilovsky Leonid E. Klyachkin Andrei A. Kudryavtsev Roman V. Kuzmin Anna M. Malyarenko Wolfgang Gehlhoff vladimir V. Romanov 不详

We present the findings of spin-dependent single-hole and pair-hole transport in plane and across the p-type high mobility silicon quantum wells (Si-QW), 2 nm, confined by the superconductor δ-barriers on the n-type Si (100) surface. The oscillations of the conductance in normal state and the zero-resistance supercurrent in superconductor state as a function of the top gate voltage are found to be correlated by on- and off-resonance tuning the two-dimensional levels of holes in Si-QW with the Fermi energy in the superconductor δ-barriers. The SIMS and STM studies have shown that the δ-barriers heavily doped with boron, 5 × 1021 cm–3, represent really alternating arrays of silicon empty and doped dots, with dimensions restricted to 2 nm. This concentration of boron seems to indicate that each doped dot located between empty dots contains two impurity atoms of boron. The EPR studies show that these boron pairs are the trigonal dipole centres, B+ - B–, that contain the pairs of holes, which result from the negative -U reconstruction of the shallow boron acceptors, 2B0 => B+ - B–. The electrical resistivity, magnetic susceptibility and specific heat measurements demonstrate that the high density of holes in the Si-QW (> 1011 cm–2) gives rise to the high temperature superconductor properties for the δ-barriers. The value of the superconductor energy gap obtained is in a good agreement with the data derived from the oscillations of the conductance in normal state and of the zero-resistance supercurrent in superconductor state as a function of the bias voltage. These oscillations appear to be correlated by on- and off-resonance tuning the two-dimensional subbands of holes with the Fermi energy in the superconductor δ-barriers. Finally, the proximity effect in the S-Si-QW-S structure is revealed by the findings of the quantization of the supercurrent and the multiple andreev reflection (MAR) observed both across and along the Si-QW plane thereby identifying the spin transis

关键词： Silicon Quantum Well Superconductor δ-barrier ESR Dipole Boron Center Multiple andreev Reflection Supercurrent Conductance EDESR Silicon Microcavity