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Low Temperature Deposition of Titanium Nitride

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Journal of Materials Science & Technology 1998年第4期14卷 289-293页

作者： Wen, LS Huang, rf Chinese Acad Sci Inst Met Res Shenyang 110015 Peoples R China

Low temperature deposition (LTD) is an actual frontier in materials sicence and engineering, especially for thin film technology. In this paper the fundamentals and processing of low temperature deposition of TiN coating are reviewed. The prerequisites of a low temperature deposition process are enough good densification, hardness and adhesion of the deposited coating. The fundamentals of low temperature deposition are structure zone model and nonequilibrium plasma vapor growth in a combined DC and pulsed electromagnetic fields, namely a combination of a DC bias voltage superimposed by a DC pulsed bias voltage with variable frequency and peak voltage height. Low temperature deposition processing can be realized simply with only stationary electric fields. However, sensitivity of the product quality to the process parameters is the main barrier of this processing in the way to mass production. Low temperature deposition processing using the effects of a combined DC and pulsed electromagnetic fields has attained some promising results for the future commercialization. But they need still further systematic and deep study. The application of low temperature deposition processing is not limited in range of low melting substrate materials. It is also important for internal stress control, defect minimization, microstructure densification and performance improvement for coatings on broad spectrum of substrate materials as well as for different types of applications.

关键词： Chen Low Temperature Deposition of Titanium Nitride

A NEW ELECTROMAGNETIC IMAGING SCHEME

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中国有色金属学会会刊：英文版 1997年第2期7卷 2-4页

作者： Zhang, rf He, JS CENT S UNIV TECHNOL COLL RESOURCE ENVIRONM & CIVIL ENGNCHANGSHA 410083PEOPLES R CHINA

ＡＮＥＷＥＬＥＣＴＲＯＭＡＧＮＥＴＩＣＩＭＡＧＩＮＧＳＣＨＥＭＥ①ＺｈａｎｇＲｏｎｇｆｅｎｇ，ＨｅＪｉｓｈａｎＣｏｌｅｇｅｏｆＲｅｓｏｕｒｃｅ，ＥｎｖｉｒｏｎｍｅｎｔａｎｄＣｉｖｉｌＥｎｇｉｎｅｒｉｎｇ，Ｃｅｎｔｒａ... 详细信息

ＡＮＥＷＥＬＥＣＴＲＯＭＡＧＮＥＴＩＣＩＭＡＧＩＮＧＳＣＨＥＭＥ①ＺｈａｎｇＲｏｎｇｆｅｎｇ，ＨｅＪｉｓｈａｎＣｏｌｅｇｅｏｆＲｅｓｏｕｒｃｅ，ＥｎｖｉｒｏｎｍｅｎｔａｎｄＣｉｖｉｌＥｎｇｉｎｅｒｉｎｇ，ＣｅｎｔｒａｌＳｏｕｔｈＵｎｉｖｅｒｓｉｔｙｏ...

关键词： electromagnetic imaging born approximation inversion

Heterogeneity in photosystem Ⅰfrom Pisum sativum L.

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Chinese Science Bulletin 1999年第1期44卷 58-62页

作者： Zheng, CX Gao, rf Beijing Forestry Univ Coll Plant Biol Beijing 100083 Peoples R China

Studies have demonstrated that there are two types of PSI (PSI-1 and PSI-2) particles in some higher plants. These two types of PSI particles are proved to differ in organization and distribution on thylakoid membrane... 详细信息

关键词： Pisum sativum L. photosystem I (PS I ) chlorophyll protein complexes polypeptide composition heterogeneity in photosystem I .

Summary of rf Group Work in 2019

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IMP & HIrfL Annual Report 2019年第1期 252-253页

作者： Xu Zhe rf Group 不详

In the past 2019,opportunities and great challenges had *** our consistent focus on rf technology,the rf department made encouraging progress and even valuable breakthroughs in its annual R&D and rf equipment maintena... 详细信息

关键词： breakthrough encouraging maintenance

The Synthesis of a Novel Lignan

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Chinese Chemical Letters 2000年第11期11卷 971-974页

作者： Qi, XX Chang, JB Guo, RY Chen, rf Zhengzhou Univ Dept Chem Zhengzhou 450052 Peoples R China Henan Acad Sci Henan Inst Chem Zhengzhou 450002 Peoples R China

A short convenient synthesis of a novel lignan, 2-(3',4',5'-trimethyoxyphenyl)-1,3-dimethyl-6,7,8-trimethoxy- naphthalene has been accomplished by the condensation of key intermediates, 3,4,5-trimethoxybenzyl methyl k... 详细信息

关键词： UV KBr IR The Synthesis of a Novel Lignan EtOH

The Effect of the Chain Length on MMA Free Radicl Polymerization

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Chinese Chemical Letters 2001年第11期12卷 1041-1042页

作者： Wang, M Mao, YG Lu, YY Yang, rf Li, F Shen, JC Jilin Univ Minist Educ Key Lab Supramol Struct & Spect Changchun 130023 Peoples R China

In the polymerization process of methyl methacrylate (MMA), the Arrhenius parameters (activation energy and frequency factor) of propagating reaction monotonically decrease with increasing monomer conversion. At the beginning and middle stage of the propagating reaction, the increase of radical chain length is the main reason of above mentioned change. And at the end stage, the sharp decrease of k(p) indicates that the activation energy is approximately incline to zero and the propagating reaction is controlled by molecular diffusion motion.

关键词： MMA Arrhenius parameters propagating reaction radical chain length

A low-jitter low-power monolithically integrated optical receiver for SDH STM-16

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Science China(Information Sciences) 2011年第6期54卷 1293-1299页

作者： CHEN YingMei , WANG ZhiGong & ZHANG Li Institute of rf- & OE-ICs, Southeast University, Nanjing 210096, China 1. Institute of rf- & OE-ICs Southeast University Nanjing 210096 China

A high-scale integrated optical receiver including a preamplifier, a limiting amplifier, a clock and data recovery (CDR) block, and a 1:4 demultiplexer (DEMUX) has been realized in a 0.25 μm CMOS technology. Using the loop parameter optimization method and the low-jitter circuit design technique, the rms and peak-to-peak jitter of the recovered 625 MHz clock are 9.4 and 46.3 ps, respectively, which meet the jitter specifications stipulated in ITU-T recommendation G.958. In response to 2.5 Gb/s PRBS input data (2 23 1), the recovered and frequency divided 625 MHz clock has a phase noise of 83.8 dBc/Hz at 20 kHz offset and the 2.5 Gb/s PRBS data has been demultiplexed into four 625 Mb/s data. The power dissipation is only 0.3 W under a single 3.3 V supply (excluding output buffers).

关键词： optical receiver jitter preamplifier limiting amplifier clock and data recovery demultiplexer

High-resolution dipole ( e, e ) study for optical oscillator strengths of valence shell excitation of nitrogen

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Chinese Science Bulletin 1997年第17期42卷 1426-1429页

作者： Zhang, XJ Feng, rf Zhong, ZP Ji, Q Zhu, LF Wu, SL Xu, KZ Department of Modern Physics University of Science and Technology of China Hefei China

NITROGEN is the most abundant element in the earth’s atmosphere. The study of optical oscillator strengths of nitrogen is of great significance in atmosphere physics, space physics and environment science. These results are also used in many fields, such as fusion plasma and developments of the nitrogen laser. As we know, calculation of absolute optical oscillator strengths of molecular nitrogen are still at the level of electronic rather than vibronic states resolved.

关键词： nitrogen optical oscillator strength high-resolution dipole (e e) method electron energy-loss spectrum.

A 12×10 Gb/s fully integrated CMOS parallel optical receiver front-end amplifier array

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Science China(Information Sciences) 2012年第6期55卷 1415-1428页

作者： LI ZhiQun,CHEN LiLi,LI Wei & ZHANG Li Institute of rf-& OE-ICs,Southeast University,Nanjing 210096,China 1. Institute of rf-& OE-ICs Southeast University Nanjing 210096 China

This paper presented a 12-channel parallel optical receiver front-end amplifier array design and realization in a low cost 0.18 μm CMOS *** channel incorporated a transimpedance amplifier and a limiting *** meet the challenge for the design of high gain front-end amplifier at date rate of up to 10 Gb/s,an optimized circuit topology was proposed and some bandwidth extension technologies were adopted,including regulated cascode,shunt peaking,and active negative *** the power consump-tion,crosstalk and noise,some corresponding solutions were presented such as applying isolation structure for parallel amplifier array,and optimization of noise and circuit parameters for 10 Gb/s *** on-wafer measurements revealed that this chip’s operation speed reached up to 10 Gb/s per channel,and 120 Gb/s with 12-channel in parallel *** a DC power of 853 mW from a 1.8 V supply voltage,the chip exhibits a conversion gain of up to 92.6 dBΩ,and a 3 dB bandwidth of 8 GHz,the output swing and input sensitivity for a bit-error rate of 10 12 at 10 Gb/s are 310 mV and 10 mVpp,*** chip size is 1142 μm×3816 μm including on-wafer testing pads.

关键词： CMOS parallel optical receiver amplifier array transimpedance amplifier limiting amplifier crosstalk isolation structure noise current