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Extraordinary evanescent field confinement waveguide sensor for mid-infrared trace gas spectroscopy

Light(Science & Applications) 2021年第2期10卷 147-153页

作者： Marek Vlk Anurup Datta Sebastián Alberti Henock Demessie Yallew vinita mittal Ganapathy Senthil Murugan Jána Jagerská Department of Physics and Technology UiT The Arctic University of NorwayNO-9037 TromsøNorway Optoelectronics Research Centre University of SouthamptonSouthampton S0171BJUK

Nanophotonic waveguides are at the core of a great variety of optical *** structures confine light along defined paths on photonic chips and provide light-matter interaction via an evanescent ***,waveguides still lag behind free-space optics for sensitivity-critical applications such as trace gas *** optical pathlengths,low interaction strengths,and spurious etalon fringes in spectral transmission are among the main reasons why on-chip gas sensing is still in its *** this work,we report on a mid-infrared integrated waveguide sensor that successfully addresses these *** sensor operates with a 107%evanescent field confinement factor in air,which not only matches but also outperforms free-space beams in terms of the per-length optical ***,negligible facet reflections result in a flat spectral background and record-low absorbance noise that can finally compete with free-space *** sensor performance was validated at 2.566μm,which showed a 7 ppm detection limit for acetylene with only a 2 cm long waveguide.

关键词： waveguide ordinary field

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Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm

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Photonics Research 2019年第8期7卷 828-836页

作者： TIANTIAN LI MILOS NEDELJKOVIC NANNICHA HATTASAN WEI CAO ZHIBO QU CALLUM GLITTLEJOHNS JORDI SOLER PENADES LORENZO MASTRONARDI vinita mittal DANIEL BENEDIKOVIC DAVID JTHOMSON FREDERIC YGARDES HEQUAN WU ZHIPING ZHOU GORAN ZMASHANOVICH Optoelectronics Research Centre University of SouthamptonSouthampton SO171BJUK State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer SciencePeking UniversityBeijing100871China Silicon Technologies Centre of Excellence Nanyang Technological UniversitySingapore639798Singapore Centre de Nanosciences et de Nanotechnologies CNRSUniv.Paris-SudUniversitéParis-SaclayC2N-Palaiseau91120PalaiseauFrance

We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.

关键词： PIN frame EAM Ge-on-Si modulators

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